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    PROCESS FOR MANUFACTURING MEMS DEVICES HAVING BURIED CAVITIES AND MEMS DEVICE OBTAINED THEREBY
    181.
    发明申请
    PROCESS FOR MANUFACTURING MEMS DEVICES HAVING BURIED CAVITIES AND MEMS DEVICE OBTAINED THEREBY 审中-公开
    制造具有BURIED CAVIITY的MEMS器件和获得的MEMS器件的工艺

    公开(公告)号：WO2011015637A1

    公开(公告)日：2011-02-10

    申请号：PCT/EP2010/061441

    申请日：2010-08-05

    Applicant: STMICROELECTRONICS S.R.L. ,  CORONA, Pietro ,  LOSA, Stefano ,  GELMI, Ilaria ,  CAMPEDELLI, Roberto

    Inventor： CORONA, Pietro ,  LOSA, Stefano ,  GELMI, Ilaria ,  CAMPEDELLI, Roberto

    IPC: B81C1/00

    CPC classification number: B81C1/00476 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C2201/0109

    Abstract: A process for manufacturing a MEMS device, wherein a bottom silicon region (4b) is formed on a substrate and on an insulating layer (3); a sacrificial region (5a) of dielectric is formed on the bottom region; a membrane region (21), of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug as far as the sacrificial region so as to form through trenches (15); the side wall and the bottom of the through trenches are completely coated in a conformal way with a porous material layer (16); at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity (18); and the through trenches are filled with filling material (20a) so as to form a monolithic membrane suspended above the cavity (18).

    Abstract translation: 一种用于制造MEMS器件的方法，其中底部硅区域（4b）形成在衬底上和绝缘层（3）上; 电介质的牺牲区（5a）形成在底部区域上; 半导体材料的膜区域（21）在牺牲区域上外延生长; 将膜区域挖到远离牺牲区域以形成通过沟槽（15）; 通过沟槽的侧壁和底部以保形方式与多孔材料层（16）完全涂覆; 牺牲区域的至少一部分被选择性地通过多孔材料层去除并形成空腔（18）; 并且通孔填充有填充材料（20a），以便形成悬浮在空腔（18）上方的整体膜。

    METHOD AND CIRCUIT FOR AVOIDING HARD SWITCHING IN RESONANT CONVERTERS
    182.
    发明申请
    METHOD AND CIRCUIT FOR AVOIDING HARD SWITCHING IN RESONANT CONVERTERS 审中-公开
    用于避免谐振转换器硬开关的方法和电路

    公开(公告)号：WO2010115976A1

    公开(公告)日：2010-10-14

    申请号：PCT/EP2010/054694

    申请日：2010-04-09

    Applicant: STMICROELECTRONICS S.R.L. ,  ADRAGNA, Claudio ,  SANTORO, Christian Leone ,  NOVELLI, Aldo Vittorio

    Inventor： ADRAGNA, Claudio ,  SANTORO, Christian Leone ,  NOVELLI, Aldo Vittorio

    IPC: H02M3/337

    CPC classification number: H02M3/337 ,  Y02B70/1433

    Abstract: A resonant dc-dc converter for converting an input dc voltage to an output dc voltage is provided. The converter includes a switching circuit for receiving the input dc voltage and generating a periodic square wave voltage oscillating between a high value corresponding to the input dc voltage and a low value corresponding to a fixed voltage. The square wave voltage oscillates at a main frequency with a main duty cycle. The converter further includes a switching driving circuit for driving the switching circuit. The switching driving circuit includes a timing circuit for setting the main frequency and the main duty cycle of the square wave voltage. The timing circuit is configured to set the value of the main duty cycle to about 50% when the converter operates in steady state. The converter includes a conversion circuit based on a resonant circuit for generating the output dc voltage from the square wave voltage based on the main frequency and on the main duty cycle. The converter further includes a disabling circuit for temporarily halting the timing circuit after a power on of the converter in such a way to temporarily vary the main duty cycle of the square wave voltage during at least one period of the square wave voltage.

    Abstract translation: 提供了用于将输入直流电压转换为输出直流电压的谐振dc-dc转换器。 转换器包括用于接收输入直流电压并产生在对应于输入直流电压的高值与对应于固定电压的低值之间振荡的周期性方波电压的开关电路。 方波电压在主频率下以主占空比振荡。 该转换器还包括用于驱动开关电路的开关驱动电路。 开关驱动电路包括用于设定方波电压的主频率和主占空比的定时电路。 定时电路被配置为当转换器处于稳定状态时将主占空比的值设置为约50％。 转换器包括基于谐振电路的转换电路，用于根据主频率和主占空比从方波电压产生输出直流电压。 该转换器还包括禁止电路，用于在转换器通电之后临时停止定时电路，从而在方波电压的至少一个周期期间临时改变方波电压的主占空比。

    POWER SUPPLY CIRCUIT FOR REMOTELY TURNING-ON ELECTRICAL APPLIANCES
    183.
    发明申请
    POWER SUPPLY CIRCUIT FOR REMOTELY TURNING-ON ELECTRICAL APPLIANCES 审中-公开

    公开(公告)号：WO2010106113A3

    公开(公告)日：2010-09-23

    申请号：PCT/EP2010/053480

    申请日：2010-03-17

    Applicant: STMICROELECTRONICS S.R.L. ,  AIELLO, Natale

    Inventor： AIELLO, Natale

    IPC: H02M1/36

    Abstract: A power supply circuit (30; 30'; 30'') for an electrical appliance (49), comprising a turning-on stage (32; 32') configured for determining a transition from a turned-off state, in which the power supply circuit (30; 30; 30) is off and does not supply electric power, to a turned-on state of the power supply circuit (30; 30'; 30''). The turning-on stage (32; 32') comprises a transducer (33; 36) of the remote-control type configured for triggering the transition in response to the reception of a wireless signal.

    CAPACITIVE POSITION SENSING IN AN ELECTROSTATIC MICROMOTOR
    185.
    发明申请
    CAPACITIVE POSITION SENSING IN AN ELECTROSTATIC MICROMOTOR 审中-公开
    静电放大器中的电容位置感测

    公开(公告)号：WO2008120256A1

    公开(公告)日：2008-10-09

    申请号：PCT/IT2007/000252

    申请日：2007-04-03

    Applicant: STMICROELECTRONICS S.R.L. ,  MURARI, Bruno ,  MASTROMATTEO, Ubaldo ,  RICOTTI, Giulio

    Inventor： MURARI, Bruno ,  MASTROMATTEO, Ubaldo ,  RICOTTI, Giulio

    IPC: H02N1/00

    CPC classification number: H02N1/006

    Abstract: An electrostatic micromotor (10') is provided with a fixed substrate (12), a mobile substrate (13) facing the fixed substrate (12), and electrostatic-interaction elements (14, 15, 17) enabling a relative movement of the mobile substrate (3) with respect to the fixed substrate (2) in a movement direction (x); the electrostatic micromotor is also provided with a capacitive position-sensing structure (18') configured to enable sensing of a relative position of the mobile substrate (13) with respect to the fixed substrate (12) in the movement direction (x). The capacitive position-sensing structure (18') is formed by at least one sensing indentation (22), extending within the mobile substrate (13) from a first surface (13a; 13b) thereof, and by at least one first sensing electrode (24), facing, in at least one given operating condition, the sensing indentation (22).

    Abstract translation: 静电微电机（10'）设置有固定基板（12），面向固定基板（12）的移动基板（13）和静电相互作用元件（14,15,17），其能够使移动体 基板（3）相对于固定基板（2）在移动方向（x）上移动; 静电微型电动机还设置有电容位置感测结构（18'），其被配置为能够在移动方向（x）上感测移动衬底（13）相对于固定衬底（12）的相对位置。 电容式位置感测结构（18'）由至少一个感测压痕（22）形成，其从移动衬底（13）的第一表面（13a; 13b）延伸，并由至少一个第一感测电极 在至少一个给定的操作条件下面对感测缩进（22）。

    ELECTRONIC DEVICE COMPRISING DIFFERENTIAL SENSOR MEMS DEVICES AND DRILLED SUBSTRATES
    187.
    发明申请
    ELECTRONIC DEVICE COMPRISING DIFFERENTIAL SENSOR MEMS DEVICES AND DRILLED SUBSTRATES 审中-公开
    包含微分传感器MEMS器件和钻孔衬底的电子器件

    公开(公告)号：WO2008089969A2

    公开(公告)日：2008-07-31

    申请号：PCT/EP2008/000495

    申请日：2008-01-23

    Applicant: STMICROELECTRONICS S.R.L. ,  BALDO, Lorenzo ,  COMBI, Chantal ,  CORTESE, Mario, Francesco

    Inventor： BALDO, Lorenzo ,  COMBI, Chantal ,  CORTESE, Mario, Francesco

    IPC: B81B7/00 ,  G01L9/00 ,  G01L13/02 ,  G01D11/24

    CPC classification number: B81B7/0061 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2203/0154 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Electronic device (1, 1a, 1b, 1c, 1d, 1e) which comprises: a substrate (2) provided with at least one passing opening (5), a MEMS device (7) with function of differential sensor provided with a first and a second surface (9, 10) and of the type comprising at least one portion (11) sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface (11a, 11b) thereof, the first surface (9) of the MEMS device (7) leaving the first active surface (11a) exposed and the second surface (10) being provided with a further opening (12) which exposes said second opposed active surface (11b), the electronic device (1, 1d, 1e) being characterised in that the first surface (9) of the MEMS device (7) faces the substrate (2) and is spaced therefrom by a predetermined distance, the sensitive portion (11) being aligned to the passing opening (5) of the substrate (2), and in that it also comprises: a protective package (14, 14a, 14b), which incorporates at least partially the MEMS device (7) and the substrate (2) so as to leave the first and second opposed active surfaces (11a, 11b) exposed respectively through the passing opening (5) of the substrate (2) and the further opening (12) of the second surface (10).

    Abstract translation: 一种电子装置（1,1a，1b，1c，1d，1e），包括：设置有至少一个通过开口（5）的衬底（2），具有功能的MEMS装置（7） ，所述差动传感器设置有第一和第二表面（9,10），并且所述类型包括至少一个对与第一和第二相对的有效表面相对应的流体的化学和/或物理变化敏感的部分（11） （11a，11b），所述MEMS器件（7）的第一表面（9）离开所述第一有源表面（11a）并且所述第二表面（10）设置有另一开口（12），所述另一开口（12）暴露所述第二对置 所述电子装置（1,1d，1e）的特征在于，所述MEMS装置（7）的所述第一表面（9）面向所述衬底（2）且与所述衬底（2）隔开预定距离，所述敏感表面 部分（11）与衬底（2）的通过开口（5）对准，并且其还包括：保护包装（14， ，其至少部分地并入MEMS器件（7）和衬底（2），从而使第一和第二相对的有源表面（11a，11b）分别暴露于衬底的通过开口（5） （2）和第二表面（10）的另一开口（12）。

    A METHOD AND SYSTEM FOR VIDEO DECODING BY MEANS OF A GRAPHIC PIPELINE, COMPUTER PROGRAM PRODUCT THEREFOR
    188.
    发明申请
    A METHOD AND SYSTEM FOR VIDEO DECODING BY MEANS OF A GRAPHIC PIPELINE, COMPUTER PROGRAM PRODUCT THEREFOR 审中-公开
    用于图形管道的视频解码的方法和系统，其计算机程序产品

    公开(公告)号：WO2007148355A1

    公开(公告)日：2007-12-27

    申请号：PCT/IT2006/000478

    申请日：2006-06-22

    Applicant: STMICROELECTRONICS S.R.L. ,  PAU, Danilo ,  BORNEO, Antonio Maria ,  LAVIGNA, Daniele

    Inventor： PAU, Danilo ,  BORNEO, Antonio Maria ,  LAVIGNA, Daniele

    IPC: H04N7/26 ,  G06T15/00

    CPC classification number: G06T9/001 ,  H04N19/27 ,  H04N19/42 ,  H04N19/436 ,  H04N19/44

    Abstract: A system for decoding a stream of compressed digital video images (IS) comprises a graphics accelerator (152 to 158) for reading (152) the stream of compressed digital video images, creating (154, 156), starting from said stream of compressed digital video images, three-dimensional scenes to be rendered, and converting (158, 160) the three-dimensional scenes to be rendered into decoded video images (OS). The graphics accelerator (152 to 158) is preferentially configured as pipeline (102) selectively switchable between operation in a graphics context and operation for decoding the stream of video images (IS) . The graphics accelerator (152 to 158) is controllable during operation for decoding the stream of compressed digital video images (IS) via a set of Application Programmer's Interfaces (APIs) comprising, in addition to new APIs, also standard APIs for operation of the graphics, accelerator (152 to 158) in a graphics context.

    Abstract translation: 用于对压缩数字视频图像（IS）流进行解码的系统包括用于读取（152）压缩数字视频图像流的图形加速器（152至158），从所述压缩数字视频图像流开始创建（154,156） 视频图像，要渲染的三维场景，以及将待渲染的三维场景转换（158,160）为解码视频图像（OS）。 图形加速器（152至158）优选地配置为在图形上下文中的操作和用于解码视频图像（IS）流的操作之间可选择地切换的流水线（102）。 图形加速器（152至158）在操作期间是可控的，用于经由一组应用程序接口（API）解码压缩数字视频图像（IS）流，除了新的API之外，还包括用于操作图形的标准API ，加速器（152至158）。

    IGBT TRANSISTOR WITH PROTECTION AGAINST PARASITIC COMPONENT ACTIVATION AND MANUFACTURING PROCESS THEREOF
    189.
    发明申请
    IGBT TRANSISTOR WITH PROTECTION AGAINST PARASITIC COMPONENT ACTIVATION AND MANUFACTURING PROCESS THEREOF 审中-公开
    具有防止PARASITIC分量激活的保护的IGBT晶体管及其制造工艺

    公开(公告)号：WO2007132483A1

    公开(公告)日：2007-11-22

    申请号：PCT/IT2006/000350

    申请日：2006-05-11

    Applicant: STMICROELECTRONICS S.R.L. ,  PATTI, Davide, Giuseppe ,  SETTANNI, Giuditta

    Inventor： PATTI, Davide, Giuseppe ,  SETTANNI, Giuditta

    IPC: H01L29/739 ,  H01L21/331 ,  H01L29/10

    CPC classification number: H01L29/66333 ,  H01L29/1095 ,  H01L29/66325 ,  H01L29/7395

    Abstract: An IGBT transistor includes a drift region (103) , at least one body region (112) housed in the drift region (103) and having a first type of conductivity, and a conduction region (124) , which crosses the body region (112) in a direction perpendicular to a surface (103a) of the drift region (103) and has the first type of conductivity and a lower resistance than the body region (112) . The conduction region (124) includes a plurality of implant regions (121, 123a-123d) , arranged at respective depths (D1-D4) from the surface (103a) of the drift region (103) .

    Abstract translation: IGBT晶体管包括漂移区（103），容纳在漂移区（103）中并且具有第一类型导电性的至少一个体区（112）和穿过体区（112）的导电区域（124） ）在垂直于漂移区域（103）的表面（103a）的方向上具有比身体区域（112）低的第一类型的导电性和较低的电阻。 导电区域（124）包括从漂移区域（103）的表面（103a）相应的深度（D1-D4）排列的多个注入区域（121,123a-123d）。

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