公开(公告)号：US20130088699A1

公开(公告)日：2013-04-11

申请号：US13704222

申请日：2011-03-17

Applicant: Andrei Mikhailovich Yakunin ,  Vadim Yevgenyevich Banine ,  Erik Roelof Loopstra ,  Harmen Klaas Van Der Schoot ,  Lucas Henricus Johannes Stevens ,  Maarten Van Kampen

Inventor： Andrei Mikhailovich Yakunin ,  Vadim Yevgenyevich Banine ,  Erik Roelof Loopstra ,  Harmen Klaas Van Der Schoot ,  Lucas Henricus Johannes Stevens ,  Maarten Van Kampen

IPC: G03B27/54 ,  G02B5/20 ,  G02B5/08

CPC classification number: G03F1/64 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/20 ,  G02B5/0816 ,  G02B5/0891 ,  G02B5/204 ,  G02B5/208 ,  G02B27/0006 ,  G03B27/54 ,  G03F1/24 ,  G03F1/62 ,  G03F7/70058 ,  G03F7/702 ,  G03F7/70916 ,  G03F7/70958 ,  G03F7/70983 ,  G21K1/062 ,  G21K2201/061 ,  H01B1/04 ,  H01B1/24

Abstract: A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles through the membrane. A particle trapping structure is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles from inside the chamber to outside the chamber.

Abstract translation: 光刻设备包括被配置为产生辐射束的辐射源和被配置为支撑图案形成装置的支撑件。 图案形成装置被配置为使辐射束具有图案以形成图案化的辐射束。 腔室位于辐射源和图案形成装置之间。 所述腔室包括被配置为反射辐射束的至少一个光学部件，并且被配置为允许来自辐射源的辐射通过。 膜被配置为允许辐射束的通过，并且防止污染颗粒通过膜的通过。 颗粒捕获结构被配置为允许气体沿着室内的间接路径流动到室外。 间接路径被配置为基本上防止污染颗粒从腔室内部通到室外。

公开(公告)号：US08340248B2

公开(公告)日：2012-12-25

申请号：US12729375

申请日：2010-03-23

Applicant: Hideo Toraya ,  Hisashi Konaka

Inventor： Hideo Toraya ,  Hisashi Konaka

IPC: G01N23/20

CPC classification number: G01N23/207 ,  B82Y10/00 ,  G21K2201/061 ,  G21K2201/062

Abstract: In an X-ray diffraction method, an X-ray parallel beam is incident on a sample, and diffracted X-rays from the sample are reflected at a mirror and thereafter detected by an X-ray detector. The reflective surface of the mirror is a combination of plural flat reflective surfaces, the respective centers of which are located on an equiangular spiral having a center that is located on a surface of the sample. The X-ray detector is one-dimensional position-sensitive in a plane parallel to the diffraction plane. X-rays that have been reflected at different flat reflective surfaces reach different points on the X-ray detector respectively. A correction is performed for separately recognizing different reflected X-rays that may have been reflected at the different flat reflective surfaces, and might be mixed with each other on the same detecting region of the X-ray detector.

Abstract translation: 在X射线衍射方法中，将X射线平行光束入射到样品上，并将衍射的X射线从样品反射，然后用X射线检测器检测。 反射镜的反射表面是多个平坦反射表面的组合，其各自的中心位于具有位于样品表面上的中心的等角螺旋上。 X射线检测器在与衍射平面平行的平面中是一维位置敏感的。 已经在不同平面反射表面反射的X射线分别到达X射线探测器的不同点。 执行用于分别识别可能在不同平面反射表面处反射的不同反射X射线的校正，并且可以在X射线检测器的相同检测区域上彼此混合。

公开(公告)号：US08335038B2

公开(公告)日：2012-12-18

申请号：US12910605

申请日：2010-10-22

Applicant: Dong-gun Lee ,  Seong-sue Kim

Inventor： Dong-gun Lee ,  Seong-sue Kim

IPC: G01B11/30 ,  G02B27/44 ,  G03F7/20 ,  G21K1/06

CPC classification number: G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/84 ,  G21K2201/061

Abstract: An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.

Abstract translation: 一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光 在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测 来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA， ＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

公开(公告)号：US20120075608A1

公开(公告)日：2012-03-29

申请号：US13312196

申请日：2011-12-06

Applicant: Hans-Juergen Mann ,  Wolfgang Singer

Inventor： Hans-Juergen Mann ,  Wolfgang Singer

IPC: G03B27/54 ,  G02B5/08

CPC classification number: G02B17/0615 ,  B82Y10/00 ,  G02B13/22 ,  G02B17/0657 ,  G03F7/70233 ,  G03F7/7025 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067

Abstract: The disclosure concerns a projection objective, which can include an object plane in which an object field is formed, an entry pupil, a mirrored entry pupil (RE) in a mirrored entry pupil plane obtained by mirroring the entry pupil (VE) at the object plane, an image plane, an optical axis, at least a first mirror and a second mirror. The projection objective can have a negative back focus of the entry pupil, and a principal ray originating from a central point of the object field and traversing the objective from the object plane to the image plane can intersect the optical axis in at least one point of intersection, wherein the geometric locations of all points of intersection lie between the image plane and the mirrored entry pupil plane.

Abstract translation: 本公开涉及一种投影物镜，其可以包括其中形成物场的物平面，入射光瞳，通过在物体上镜像入射光瞳（VE）获得的镜像入射光瞳平面中的镜像入射光瞳（RE） 平面，图像平面，光轴，至少第一反射镜和第二反射镜。 投影物镜可以具有入射光瞳的负的后焦点，并且源自物场的中心点并且从物体平面向图像平面穿过物镜的主射线可以在光轴的至少一点 交叉点，其中所有交点交点的几何位置位于图像平面和镜像入射光瞳平面之间。

公开(公告)号：US20110299662A1

公开(公告)日：2011-12-08

申请号：US13112099

申请日：2011-05-20

Applicant: Kohei Okamoto ,  Atsushi Komoto ,  Wataru Kubo ,  Hirokatsu Miyata ,  Takashi Noma

Inventor： Kohei Okamoto ,  Atsushi Komoto ,  Wataru Kubo ,  Hirokatsu Miyata ,  Takashi Noma

IPC: G21K1/00

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G21K2201/061 ,  G21K2201/067

Abstract: An X-ray waveguide which: shows a small propagation loss of an X-ray; does not deteriorate owing to oxidation; and can be easily produced is realized with an X-ray waveguide, including: a core for guiding an X-ray in such a wavelength band that the real part of refractive index of materials is 1 or less; and a cladding for confining the X-ray in the core, in which: the cladding has a one-dimensional periodic structure consisting of at least two materials having different real parts of refractive index; one of the materials is inorganic one, and another one of materials is any of an organic material, a gas, or vacuum; and the core and the cladding are formed so that the critical angle for total reflection at the interface between the core and the cladding is smaller than a Bragg angle depending on the periodicity of the one-dimensional periodic structure.

Abstract translation: X射线波导：X射线的传播损耗小; 不会因氧化而劣化; 并且可以容易地制造，其包括：用于引导材料的折射率的实数为1以下的波长带的X射线的芯; 以及用于将X射线限制在芯中的包层，其中：包层具有由具有不同实际折射率部分的至少两种材料组成的一维周期性结构; 其中一种材料是无机材料，另一种材料是有机材料，气体或真空中的任何一种; 并且芯和包层形成为使得在芯和包层之间的界面处的全反射的临界角小于根据一维周期性结构的周期性的布拉格角。

公开(公告)号：US20110255668A1

公开(公告)日：2011-10-20

申请号：US12667464

申请日：2008-07-02

Applicant: Peter Hoghoj ,  Pascal Boulee ,  Paraskevi Ntova ,  Sergio Rodrigues

Inventor： Peter Hoghoj ,  Pascal Boulee ,  Paraskevi Ntova ,  Sergio Rodrigues

IPC: H01J35/10

CPC classification number: H01J35/10 ,  B82Y10/00 ,  G21K2201/061 ,  G21K2201/064 ,  H01J35/14 ,  H01J35/20

Abstract: The invention relates to X-ray analytical instruments (RX), more precisely a device for providing a high energy X-ray beam, typically above 4 keV, for X-ray analysis applications. The device comprises an X-ray tube with a turning anode and an X-ray lens for shaping the beam.

Abstract translation: 本发明涉及X射线分析仪器（RX），更准确地说，一种用于提供通常高于4keV的高能X射线束用于X射线分析应用的装置。 该装置包括具有转向阳极的X射线管和用于使束成形的X射线透镜。

公开(公告)号：US07933383B2

公开(公告)日：2011-04-26

申请号：US12421907

申请日：2009-04-10

Applicant: Boris Verman ,  Licai Jiang

Inventor： Boris Verman ,  Licai Jiang

IPC: G21K1/00

CPC classification number: G21K1/06 ,  B82Y10/00 ,  G21K2201/061

Abstract: An x-ray generating system includes a source of x-ray radiation, a waveguide bundle optic for collimating the x-ray radiation produced by the source, a focusing optic for focusing the collimated x-ray radiation to a focal point.

Abstract translation: X射线产生系统包括X射线辐射源，用于准直由源产生的x射线辐射的波导束光学器件，用于将准直X射线辐射聚焦到焦点的聚焦光学器件。

公开(公告)号：US20110073785A1

公开(公告)日：2011-03-31

申请号：US12996029

申请日：2009-06-04

Applicant: Renaud Mercier-Ythier ,  Roland Geyl

Inventor： Renaud Mercier-Ythier ,  Roland Geyl

IPC: G21K1/06

CPC classification number: B82Y10/00 ,  G02B17/061 ,  G02B17/0694 ,  G02B19/0023 ,  G02B19/0047 ,  G02B19/0095 ,  G03F7/70166 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067

Abstract: The invention relates to a radiation collector (10) designed to concentrate part of the radiation produced by a source on a spot (100). The collector includes a primary concave mirror (1) and a secondary convex mirror (2), each being rotationally symmetrical about an optical axis (X-X) of the collector. The primary mirror is configured to reflect the radiation collected with an angle of incidence (i) that is substantially constant between different points on said main mirror. Such a collector is particularly suitable for use with a discharge produced plasma source.

Abstract translation: 本发明涉及一种设计用于将由源产生的辐射的一部分集中在点（100）上的辐射收集器（10）。 收集器包括一个初级凹面镜（1）和一个副凸面镜（2），它们都围绕收集器的光轴（X-X）旋转对称。 主镜被配置成以在所述主镜上的不同点之间基本上恒定的入射角（i）反射所收集的辐射。 这种集电器特别适用于放电产生的等离子体源。

公开(公告)号：US20110058652A1

公开(公告)日：2011-03-10

申请号：US12879922

申请日：2010-09-10

Applicant: Gerald Todd Seidler

Inventor： Gerald Todd Seidler

IPC: G01T1/36 ,  G01N23/00 ,  G02B5/18

CPC classification number: G21K1/062 ,  B33Y80/00 ,  B82Y10/00 ,  G01N23/2076 ,  G02B5/0891 ,  G21K2201/061 ,  G21K2201/062 ,  G21K2201/064

Abstract: A spectrometer includes a rigid body having a first planar face with an orientation and a second planar face with a different orientation than the first planar face. The first and second planar faces are configured to position Bragg diffraction elements, and the orientation of the first planar face and the different orientation of the second planar face are arranged to convey a predetermined spectral range of the electromagnetic radiation to non-overlapping regions of the sensor location via the diffraction elements.

Abstract translation: 光谱仪包括具有具有取向的第一平面和具有不同于第一平面的取向的第二平面的刚体。 第一和第二平面被配置为布置布拉格衍射元件，并且第一平面的取向和第二平面的不同取向被布置成将电磁辐射的预定光谱范围传送到非重叠区域 通过衍射元件的传感器位置。

公开(公告)号：US20110033025A1

公开(公告)日：2011-02-10

申请号：US12910605

申请日：2010-10-22

Applicant: DONG-GUN LEE ,  Seong-sue Kim

Inventor： DONG-GUN LEE ,  Seong-sue Kim

IPC: G21K5/00

CPC classification number: G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/84 ,  G21K2201/061

Abstract: An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.

Abstract translation: 一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含该图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光 在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测 来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA， ＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。