Abstract:
본 발명은 엑스선/감마선 집속 광학계의 제조 방법에 관한 것으로서, 모세관 기판을 제공하는 단계, 그리고 상기 모세관 기판의 내부 표면상에 각각 엑스선/감마선 불투명 물질과 엑스선/감마선 투명 물질로 이루어진 복수의 교대 층을 프레넬 형식에 따라 원자층 증착에 의해 순차적으로 퇴적하는 단계를 포함한다.
Abstract:
An x-ray optical system includes a multiple corner optic assembly including an adjustable aperture assembly located in close proximity to the optic assembly. The adjustable aperture assembly enables a user to easily and effectively adjust the convergence of an incident beam of x-rays or the optic focal spot size. The adjustable aperture assembly may further enable a user to condition x-rays of one wavelength and block x-rays of another wavelength and thereby reduce the amount of background radiation exhibited from x-rays of more than one wavelength.
Abstract:
An X-ray waveguide showing a small propagation loss and having a waveguide mode with its phase controlled is provided. The X-ray waveguide including: a core (404) for guiding an X-ray in a wavelength band that a real part of the refractive index of a material is 1 or less; and a cladding (402, 403) for confining the X-ray in the core, in which: the X-ray is confined in the core by total reflection at a interface between the core and the cladding; in the core multiple materials (405, 406) having different real parts of the refractive index are periodically arranged; and a waveguide mode of the X-ray waveguide is such that the number of antinodes or nodes of an electric field intensity distribution or a magnetic field intensity distribution of the X-ray coincides with the number of periods of the periodic structure in a direction perpendicular to a waveguiding direction of the X-ray in the core.
Abstract:
A mirror is provided which may include: a substrate (111); a thermal diffusion layer (112) provided on a principal surface of the substrate, the thermal diffusion layer having a higher thermal conductivity than the substrate; and a reflective layer (113) provided on the thermal diffusion layer, the reflective layer having a lower thermal conductivity than the thermal diffusion layer.
Abstract:
A multilayer mirror (100) is configured to reflect extreme ultraviolet (EUV) radiation while absorbing a second radiation having a wavelength substantially- longer than that of the EUV radiation. The mirror includes a plurality of layer pairs (110, 112) stacked on a substrate (104). Each layer pair comprises a first layer (112) that includes a first material, and a second layer (110) that includes a second material. The first layer (112) is modified to reduce its contribution to reflection of the second radiation, compared with a simple layer of the same metal having the same thickness. Modifications can include doping with a third material in or around the metal layer to reduce its electric conductivity by chemical bonding or electron trapping, and/or splitting the metal layer into sub-layers with insulating layers. The number of layers in the stack is larger than known multilayer mirrors and may be tuned to achieve a minimum in IR reflection.
Abstract:
An optic device includes a multilayer zone forming a redirection section for redirecting and transmitting photons through total internal reflection, each multilayer zone including a high index material having a first real refractive index n1 and a first absorption coefficient ß1, a low index material having a second real refractive index n2 and a second absorption coefficient ß2, and a grading zone disposed between the high index material and the low index material and including a grading layer having a third real refractive index n3, and a third absorption coefficient ß3, wherein n 1 > n 3 > n2.
Abstract translation:光学器件包括形成重定向部分的多层区域,用于通过全内反射来重定向和传输光子,每个多层区域包括具有第一实际折射率n1和第一吸收系数β1的高折射率材料,具有第二吸收系数的低折射率材料 实际折射率n2和第二吸收系数β2,以及设置在高折射率材料和低折射率材料之间的分级区,并且包括具有第三实际折射率n3和第三吸收系数β3的分级层,其中n 1> n 3> n2。
Abstract:
A transmissive spectral purity filter configured to transmit extreme ultraviolet radiation includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in semiconductor material such as silicon by an anisotropic etching process. The semiconductor material is provided with a hydrogen-resistant layer, such as silicon nitride Si 3 N 4 , silicon dioxide SiO 2 , or silicon carbide SiC. Roughness features may be exaggerated in the sidewalls of the apertures. The filter part may be less than about 20 μm thick with apertures about 2 μm to about 4 μm in width.
Abstract translation:配置为透射极紫外线辐射的透射光谱纯度滤光器包括具有多个孔以过滤极紫外辐射并抑制第二类辐射的透射的滤光器部分。 可以通过各向异性蚀刻工艺在诸如硅的半导体材料中制造孔。 半导体材料设置有耐氮层,例如氮化硅Si 3 N 4,二氧化硅SiO 2或碳化硅SiC。 粗糙度特征可能在孔的侧壁中被夸大。 过滤器部分可以小于约20μm厚,孔宽度大约2μm至大约4μm。
Abstract:
A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a longitudinal strip extending the length of the ultraviolet lamp. The longitudinal strip has a curved reflective surface and comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.
Abstract:
In order to produce stress-reduced reflective optical elements (1) for an operating wave length in the soft X-ray and extreme ultraviolet wavelength range, in particular for use in EUV lithography, it is proposed to apply between substrate (2) and a multilayer system (4) optimized for high reflectivity at the operating wavelength a stress-reducing multilayer system (6) with the aid of layer-forming particles, having an energy of 40 eV or more preferably 90 eV or more. Resulting reflective optical elements (1) are distinguished by low surface roughnesses, a low number of periods in the stress-reducing multilayer system and also high Γ values of the.stress-reducing multilayer system.
Abstract:
Un collecteur de rayonnement (10) est adapté pour concentrer dans une tache (100) une partie d'un rayonnement produit par une source. Le collecteur comprend un miroir primaire concave (1) et un miroir secondaire convexe (2), chacun à symétrie de révolution autour d'un axe optique (X-X) du collecteur. Le miroir primaire est adapté pour réfléchir le rayonnement collecté avec un angle d'incidence (i) qui est sensiblement constant entre des points différents dudit miroir primaire. Un tel collecteur est particulièrement adapté pour être utilisé avec une source du type plasma produit par décharge.