Method of manufacturing microchannel electron multipliers
    181.
    发明授权
    Method of manufacturing microchannel electron multipliers 失效
    制造微通道电子倍增器的方法

    公开(公告)号:US5205902A

    公开(公告)日:1993-04-27

    申请号:US789975

    申请日:1991-11-12

    Abstract: A microchannel plate and method is disclosed. In a preferred embodiment the microchannel plate is a water of anisotropically etchable material having been subjected to a directionally applied flux of reactive particles against at least one face of the wafer in selected areas corresponding to microchannel locations. The flux removes material from the selected areas to produce microchannels in the wafer in accordance with the directionality of the applied flux.

    Abstract translation: 公开了一种微通道板和方法。 在优选实施例中,微通道板是各向异性可蚀刻材料的水,其已经在对应于微通道位置的选定区域中经过定向施加的反应性颗粒的流量抵靠晶片的至少一个面。 通量从选定区域去除材料,以根据施加的焊剂的方向性在晶片中产生微通道。

    Photomultiplier tube having a slidable multiplier element
    184.
    发明授权
    Photomultiplier tube having a slidable multiplier element 失效
    具有可滑动乘法器元件的光电倍增管

    公开(公告)号:US4871943A

    公开(公告)日:1989-10-03

    申请号:US270156

    申请日:1988-11-10

    Inventor: Gilbert Eschard

    CPC classification number: H01J9/125 H01J9/18 H01J2201/32

    Abstract: A method of manufacturing a photomultiplier tube (10) comprising a tube body (20), a photocathode (30) and an electron multiplier element (40) destined to be placed at a small distance from the photocathode (30). According to the invention the tube (10) is provided with sliding means (50) of the electron multiplier (40) parallel to the axis (22) of the tube body (20), means (50) provided with abutments (53) situated in the proximity of the said window (31). The electron multiplier (40) is also provided with means (60) for the remote soldering of the electron multiplier to the said sliding means (50), and in a first step the electron multiplier (40) is placed at a sufficient distance from the window (31), then in a second step the constituents of the photocathode are evaporated by means of evaporators (70) placed at a distance from the window and, in a third step, the electron multiplier (40) is moved against the said abutments (53), while in a fourth step the electron multiplier (40) is maintained in position in the proximity of the photocathode (30) by remote soldering to the sliding means (50) with the aid of the remote soldering means (60).

    Abstract translation: 一种制造光电倍增管(10)的方法,包括管体(20),光电阴极(30)和电子倍增器元件(40),目的地放置在距离光电阴极(30)很小的距离处。 根据本发明,管(10)设置有平行于管体(20)的轴线(22)的电子倍增器(40)的滑动装置(50),装置(50)设置有位于(53) 在所述窗口(31)附近。 电子倍增器(40)还设置有用于将电子倍增器远程焊接到所述滑动装置(50)的装置(60),并且在第一步骤中,电子倍增器(40)被放置在与 窗口(31),然后在第二步骤中,通过放置在与窗口一定距离处的蒸发器(70)使光电阴极的成分蒸发,并且在第三步骤中,使电子倍增器(40)抵靠所述基座 (53),而在第四步骤中,电子倍增器(40)通过远程焊接装置(60)远程焊接到滑动装置(50)而保持在光电阴极(30)附近的位置。

    Production method for channel plate
    185.
    发明授权
    Production method for channel plate 失效
    通道板生产方法

    公开(公告)号:US4764139A

    公开(公告)日:1988-08-16

    申请号:US916826

    申请日:1986-10-09

    CPC classification number: H01J9/125 H01J2201/32

    Abstract: A method for production of channel plate from sheet material having secondary emission yield after firing. According to the method, a plurality of parallel ribs are formed on the sheet. Then at least two layers of sheet are arranged one over the other by stacking in such manner that each rib element extends in the same direction, or the sheet is rolled into a spiral form which can be cut into channel plates. The stacked or rolled sheet material is then fired so as to adhere the surfaces of the ribs to the surfaces of the adjacent sheet to form the channel plate. In the particular embodiment disclosed herein, the sheet is rolled in the longitudinal direction of the ribs and the spiral body is cut into sector like pieces. After firing, electrodes are formed onto opposed end surfaces including end surfaces of each rib.

    Abstract translation: 从烧成后具有二次发射产率的板材生产通道板的方法。 根据该方法,在片材上形成多个平行肋。 然后,通过以使得每个肋元件沿相同方向延伸的方式通过堆叠将至少两层片材彼此排列,或者将片材卷成可切割成通道板的螺旋形式。 然后对堆叠或卷绕的片材进行烧制,以将肋的表面粘附到相邻片的表面以形成通道板。 在本文公开的特定实施例中,片材在肋的纵向方向上滚动,并且螺旋体被切割成扇形。 在烧制之后,电极形成在包括每个肋的端表面的相对的端面上。

    Strip microchannel electron multiplier array support structure
    186.
    发明授权
    Strip microchannel electron multiplier array support structure 失效
    带微通道电子倍增器阵列支撑结构

    公开(公告)号:US4126804A

    公开(公告)日:1978-11-21

    申请号:US758741

    申请日:1977-01-12

    Abstract: A linear array of electron multiplier microchannels is formed by fusing a plurality of solid core glass fibers into a rectangular array. A number of arrays is then sandwiched between a pair of glass plate support members fused into a linear arrangement followed by treating to form the electron multiplier. Treatment comprises subjecting the arrangement to an acid etch for removing the core material and hydrogen firing to activate the core walls for secondary electron emission. The apparatus finds application as an ion-electron converter in focal plane mass spectrometers where high electron gain is required.

    Abstract translation: 电子倍增器微通道的线性阵列通过将多个实心芯玻璃纤维熔合成矩形阵列来形成。 然后将多个阵列夹在一对玻璃板支撑构件之间,该玻璃板支撑构件融合成线性布置,然后进行处理以形成电子倍增器。 处理包括使该装置进行酸蚀刻以去除芯材料和氢烧制以激活用于二次电子发射的芯壁。 该装置在需要高电子增益的焦平面质谱仪中发现应用为离子电子转换器。

    Method of making secondary-electron emitters
    187.
    发明授权
    Method of making secondary-electron emitters 失效
    制造二次电子发射体的方法

    公开(公告)号:US4115228A

    公开(公告)日:1978-09-19

    申请号:US802203

    申请日:1977-05-31

    CPC classification number: H04M3/527 H01J1/32 H01J9/125 H01J2201/32 H04M3/42221

    Abstract: Thick, finely-grained films of cermets are fabricated using conventional techniques of sputtering the ceramic and the metal onto a substrate. The cermet is then subjected to differential sputtering in which the metal is sputtered away faster than the ceramic to leave a ceramic-rich surface layer having excellent secondary-electron-emission properties for low-energy incident electrons. Typical of such cermets are MgO/Au, MgO/Pt and MgO/Ag. The presence of metallic particles in the bulk of the films and the small size of the ceramic particles greatly reduce surface charging while allowing the emitter film to be made thick enough to have a long operating life under adverse device conditions.

    Abstract translation: 使用将陶瓷和金属溅射到衬底上的常规技术来制造厚的细颗粒金属陶瓷膜。 然后对金属陶瓷进行差分溅射,其中金属溅射比陶瓷更快地离开具有对于低能量入射电子具有优异的二次电子发射特性的富陶瓷表面层。 典型的这种金属陶瓷是MgO / Au,MgO / Pt和MgO / Ag。 大部分薄膜中金属颗粒的存在和陶瓷颗粒的大小大大降低了表面带电量,同时允许发射极薄膜制得足够厚以在不利的器件条件下具有较长的工作寿命。

    Magnesium oxide dynode and method of preparation
    188.
    发明授权
    Magnesium oxide dynode and method of preparation 失效
    氧化镁倍增极及其制备方法

    公开(公告)号:US4088510A

    公开(公告)日:1978-05-09

    申请号:US659250

    申请日:1976-02-19

    CPC classification number: C23C8/10 H01J1/32 H01J9/125 H01J2201/32

    Abstract: A layer of near stoichiometric magnesium oxide on a conducting substrate forms a dynode. The dynode is formed by preparing a layer of oxidized magnesium on a conducting substrate, heating the oxidized magnesium layer in a vacuum between about 400.degree. and about 500.degree. C., and treating the layer to render it more nearly stoichiometric. One method of treating the layer is to expose it to oxygen at about room temperature for about ten to twenty minutes at a pressure between about 10.sup.-6 to 10.sup.-5 torr. Another method of treating the layer is to impinge a noble gas, such as argon, at a pressure suitable for sputter etching, such as between 10.sup.-6 and 10.sup.-3 torr, to remove between ten and twenty atomic layers from the surface of the layer. The layer is then exposed to oxygen at room temperature for about ten to twenty minutes at a pressure between about 10.sup.-6 and 10.sup.-5 torr.

    Abstract translation: 导电衬底上的接近化学计量的氧化镁层形成倍增极。 通过在导电基板上制备氧化镁层,在约400℃至约500℃之间的真空中加热氧化镁层,并处理该层使其更接近化学计量,形成倍增极。 处理该层的一种方法是在大约10 -6至10 -5乇之间的压力下,在约室温下将其暴露于氧气约10至20分钟。 处理该层的另一种方法是以适于溅射蚀刻的压力(例如10 -6至10 -3托)之间的惰性气体(例如氩气)冲击,以从该表面去除10至20个原子层 层。 然后将该层在约10 -6至10 -5托之间的压力下在室温下暴露于氧气约10至20分钟。

    Material and method of making secondary-electron emitters
    190.
    发明授权
    Material and method of making secondary-electron emitters 失效
    制造二次电子发射体的材料和方法

    公开(公告)号:US4038216A

    公开(公告)日:1977-07-26

    申请号:US604390

    申请日:1975-08-13

    CPC classification number: H01J1/32 H04M3/527 H01J2201/32

    Abstract: Thick, finely-grained films of cermets are fabricated using conventional techniques of sputtering the ceramic and the metal onto a substrate. The cermet is then subjected to differential sputtering in which the metal is sputtered away faster than the ceramic to leave a ceramic-rich surface layer having excellent secondary-electron-emission properties for low-energy incident electrons. Typical of such cermets are MgO/Au, MgO/Pt and MgO/Ag. The presence of metallic particles in the bulk of the films and the small size of the ceramic particles greatly reduce surface charging while allowing the emitter film to be made thick enough to have a long operating life under adverse device conditions.

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