탄성파 소자의 제조방법 및 그에 따라 제조된 탄성파 소자
    11.
    发明公开
    탄성파 소자의 제조방법 및 그에 따라 제조된 탄성파 소자 无效
    制造弹性声波装置的方法和弹性波形装置

    公开(公告)号:KR1020010029007A

    公开(公告)日:2001-04-06

    申请号:KR1019990041582

    申请日:1999-09-28

    CPC classification number: H03H9/25 H03H3/08 H03H9/02574 H03H9/131 H03H9/564

    Abstract: PURPOSE: A method for manufacturing an elastic acoustic wave device and the elastic acoustic wave device is provided to manufacture the elastic acoustic wave device having high quality factor(Q) and filtering regions of narrow-band and wide-band. CONSTITUTION: A silicon oxide(SiO2) film(4) having the first elastic impedance and thickness which is 0.12-0.13 times as large as elastic acoustic wave wavelength and a tungsten film(6) having the second elastic impedance larger than the first elastic impedance and thickness which is 0.2-0.3 times as large as elastic acoustic wave wavelength are laminated on a substrate alternatively to form an acoustic reflecting layer. The first conductor thin film is formed on the acoustic reflecting layer. A piezoelectric thin film(12) is formed on the first conductor thin film. The second conductor thin film is formed on the piezoelectric thin film.

    Abstract translation: 目的:提供一种制造弹性弹性波装置的方法和弹性声波装置,以制造具有高质量因子(Q)的弹性弹性波装置和窄带和宽带的滤波区域。 构成:具有第一弹性阻抗和厚度为弹性声波波长的0.12-0.13倍的氧化硅(SiO 2)膜(4)和具有大于第一弹性阻抗的第二弹性阻抗的钨膜(6) 将与弹性声波波长的0.2〜0.3倍的厚度交替层叠在基板上,形成声反射层。 第一导体薄膜形成在声反射层上。 在第一导体薄膜上形成压电薄膜(12)。 第二导体薄膜形成在压电薄膜上。

    써미스터 조성물
    12.
    发明授权
    써미스터 조성물 失效
    热敏成分

    公开(公告)号:KR100135637B1

    公开(公告)日:1998-04-22

    申请号:KR1019950043067

    申请日:1995-11-23

    Inventor: 장광현 윤상옥

    Abstract: 본 발명은 400°K 이상의 높은 B정수를 갖는 써미스터 조성물에 관한 것으로, 특히, χ산화망간(Mn
    3 O
    4 )+y산화코발트(Co
    3 O
    4 )+z산화크롬(Cr
    2 O
    3 )을 기본조성으로 하여 제조되는 써미스터 원료로써, 탄산리듐(Li
    2 CO
    3 ), 산화아연(ZnO), 산화니켈(NiO), 산화철(Fe
    2 O
    3 ), 산화티탄산(TiO
    2 ), 산화니오븀(NbO
    5 )을 소량 첨가하여 B정수를 크게 저하시키지 않고, 비저항을 조절할 수 있는 것을 특징으로 하는 금속 산화물계 써미스터 조성물에 관한 것이다.

    광 감지용 반도체 소자 및 이것의 제조방법
    14.
    发明授权
    광 감지용 반도체 소자 및 이것의 제조방법 有权
    肖特式超声波传感器及其制造方法

    公开(公告)号:KR100867106B1

    公开(公告)日:2008-11-06

    申请号:KR1020070081019

    申请日:2007-08-13

    Abstract: A photosensitive semiconductor device and a manufacturing method thereof are provided to transfers inclined incident light to a depletion region conveniently. A Schottky contact metal layer(104) has an opened light receiving region on a semiconductor substrate(103), and a depletion region(105) is formed on a semiconductor substrate of the Schottky contact metal layer. An optical condenser(110) has a convex section shape, which is higher than the metal layer, in the light receiving region by treating an optical condenser pattern and transparent non-conductive layer by reactive ion etching.

    Abstract translation: 提供一种光敏半导体器件及其制造方法,用于将倾斜入射光方便地传送到耗尽区。 肖特基接触金属层(104)在半导体衬底(103)上具有开放的光接收区域,并且在肖特基接触金属层的半导体衬底上形成耗尽区(105)。 在光接收区域中,通过反应离子蚀刻处理光聚光器图案和透明非导电层,光学冷凝器(110)具有高于金属层的凸形形状。

    칩형 공진기 및 그 제조방법
    15.
    发明授权
    칩형 공진기 및 그 제조방법 失效
    芯片型谐振器及其方法

    公开(公告)号:KR100585995B1

    公开(公告)日:2006-06-07

    申请号:KR1020010084380

    申请日:2001-12-24

    Abstract: 제조가 용이하고 대량 생산이 가능하며 소형 인쇄회로기판에 실장하는 것이 가능하도록, 소정 크기의 기판과, 기판위에 형성되는 음향학적 반사층과, 음향학적 반사층의 위에 형성되는 하부전극과, 기판 및 하부전극의 위에 형성되는 압전층과, 압전층의 위에 형성되는 상부전극과, 상부전극 및 하부전극과 각각 연결되는 한쌍의 상부리드선 및 하부리드선이 설치되고 하부전극과 상부전극 및 압전층을 감싸는 패키지부재를 포함하는 칩형 공진기를 제공한다.
    또 소정 크기의 기판을 하나이상의 행과 열로 나누고 나뉘어진 각 구역에 소정의 패턴으로 음향학적 반사층을 형성하는 반사층형성공정과, 각각의 음향학적 반사층 위에 전도성 재료를 도포하여 하부전극을 형성하는 하부전극형성공정과, 기판 및 하부전극 위에 압전재료를 도포하여 압전층을 형성하는 압전층형성공정과, 압전층 위에 전도성 재료를 도포하여 상부전극을 형성하는 상부전극형성공정과, 구역을 서로 분리하여 공진기칩을 형성하는 절단공정과, 상부리드선 및 하부리드선을 설치하고 각 공진기칩의 하부전극과 상부전극 및 압전층을 감싸서 밀봉하는 패키징공정을 포함하는 칩형 공진기 제조방법을 제공한다.
    공진기, 칩형태, 패키지, FBAR, 압전층, 집적회로, 몰딩, 인쇄회로기판

    체적탄성파 소자의 전용 패키지 및 그의 제조방법
    16.
    发明公开
    체적탄성파 소자의 전용 패키지 및 그의 제조방법 失效
    具有特征控制元件的FBAR包装及其制造方法

    公开(公告)号:KR1020040100484A

    公开(公告)日:2004-12-02

    申请号:KR1020030032863

    申请日:2003-05-23

    CPC classification number: H03H9/15 H03H3/02 H03H9/25 H03H2001/0085

    Abstract: PURPOSE: A FBAR package having a characteristic control element and a fabricating method thereof are provided to radiate effectively the heat from the inside of the FBAR package to the outside by using a metal column or a heat radiation layer formed at a top part of the FBAR package. CONSTITUTION: A package body(50) is formed by an LTCC process. A characteristic control element and a plurality of sheets are installed in the inside of the package body. A plurality of strip lines are formed on the sheets. A FBAR(63,64) is formed on one side of the package body. A package ground electrode is electrically connected to the characteristic control element by a wire bonding method or a flip chip bonding method. A package input/output electrode(51,52) and a package electrode pad are installed at the package body. An electrode of the FBAR is connected to the package electrode pad. A cover(56) is installed on a top part of the FBAR. A heat radiation structure is used for radiating the heat generated from the package body to the outside.

    Abstract translation: 目的:提供一种具有特征控制元件及其制造方法的FBAR封装,通过使用形成在FBAR顶部的金属柱或散热层,有效地辐射从FBAR封装的内部向外部的热量 包。 构成:包装体(50)由LTCC工艺形成。 特征控制元件和多个片材安装在包装体的内部。 在纸张上形成多条带状线。 FBAR(63,64)形成在封装体的一侧。 封装接地电极通过引线接合方法或倒装芯片接合方法电连接到特性控制元件。 包装输入/输出电极(51,52)和封装电极焊盘安装在封装体上。 FBAR的电极连接到封装电极焊盘。 在FBAR的顶部安装有盖(56)。 散热结构用于将从封装体产生的热量散发到外部。

    벌크형 유전체 칩 안테나 및 그 제조방법
    17.
    发明授权
    벌크형 유전체 칩 안테나 및 그 제조방법 有权
    벌크형유전체칩안테나및그제조방법

    公开(公告)号:KR100399979B1

    公开(公告)日:2003-09-29

    申请号:KR1020010036869

    申请日:2001-06-27

    Inventor: 우종명 이호선

    Abstract: PURPOSE: A bulk type dielectric chip antenna and method for manufacturing the same is provided to simplify manufacturing procedures and allow for a mass production, while reducing costs. CONSTITUTION: A bulk type dielectric chip antenna comprises a dielectric bulk(10) having a predetermined shape; a plurality of conductor bands(21,23,25) formed by depositing conductors at upper and lower surfaces of the dielectric bulk; a plurality of connector bands(32 to 36) having a plurality of through holes(12 to 16) formed at the dielectric bulk so as to connect conductor bands formed at the upper and lower surfaces of the dielectric bulk, wherein each through hole is deposited or filled with a conductor; and a feeder point(42) and a supporter point(44) formed at the opposed surfaces of the dielectric bulk, and which are connected to both ends of conductor bands which are connected into a single path.

    Abstract translation: 目的:提供散装型电介质芯片天线及其制造方法,以简化制造程序并允许批量生产,同时降低成本。 一种体型电介质芯片天线,包括具有预定形状的电介质块(10) 多个导体带(21,23,25),其通过在所述电介质块的上表面和下表面处沉积导体而形成; 多个连接器带(32至36),其具有形成在电介质块上的多个通孔(12至16),以连接形成在电介质块的上表面和下表面处的导体带,其中每个通孔被沉积 或充满导体; 和形成在电介质块的相对表面上的馈电点(42)和支撑点(44),并且所述馈电点(42)和支撑点(44)连接到连接成单个路径的导体带的两端。

    압전박막형 공진기 및 그 제조방법
    18.
    发明公开
    압전박막형 공진기 및 그 제조방법 无效
    压电薄膜共振器及其制造方法

    公开(公告)号:KR1020030032401A

    公开(公告)日:2003-04-26

    申请号:KR1020010064153

    申请日:2001-10-18

    CPC classification number: H03H9/15 H01L41/22 H03H3/02 H03H9/132 H03H9/174

    Abstract: PURPOSE: A piezoelectric thin film resonator and a fabrication method thereof are provided which has a good resonance characteristics and an easy fabrication process by forming a bottom electrode and a piezoelectric thin film and top electrode after forming an acoustic reflection layer. CONSTITUTION: A piezoelectric thin film(30) is formed on a substrate(2) in a fixed shape and a fixed thickness with a material having piezoelectricity. An acoustic reflection layer(10) is formed between the substrate and the piezoelectric thin film with a material having an acoustic impedance as low as 1/20 of the above piezoelectric thin film. A bottom electrode(20) is formed between the piezoelectric thin film and the acoustic reflection layer with a conductive material. And a top electrode(40) is formed on the piezoelectric thin film with a conductive material.

    Abstract translation: 目的:提供一种压电薄膜谐振器及其制造方法,其通过在形成声反射层之后形成底电极,压电薄膜和顶电极,具有良好的谐振特性和容易的制造工艺。 构成:在具有压电性的材料的固定形状和固定厚度的基板(2)上形成压电薄膜(30)。 在具有低于上述压电薄膜的1/20的声阻抗的材料的基板和压电薄膜之间形成声反射层(10)。 在压电薄膜和声反射层之间用导电材料形成底电极(20)。 并且在导电材料的压电薄膜上形成顶部电极(40)。

    마이크로스트립 패치 안테나
    19.
    发明公开
    마이크로스트립 패치 안테나 失效
    MICROSTRIP PATCH天线

    公开(公告)号:KR1020030025475A

    公开(公告)日:2003-03-29

    申请号:KR1020010058515

    申请日:2001-09-21

    Abstract: PURPOSE: A microstrip patch antenna is provided to be capable of being miniaturized by a simple manner while using the same dielectric, by forming a concave-convex at a patch. CONSTITUTION: A ground plate(6) is formed to have a predetermined shape. A patch(4) is spaced apart from the ground plate, and a concave-convex is formed at the patch so as to have a predetermined pattern. A dielectric layer(2) is formed between the ground plate and the patch. The concave-convex is formed such that concave and convex parts(11,12) are alternately arranged in a length direction in a straight line shape. Alternatively, the concave-convex is formed such that concave and convex parts are intersected in row and column directions. Alternatively, the concave-convex is formed such that concave and convex parts are alternately arranged along a circumference.

    Abstract translation: 目的:通过在贴片上形成凹凸,通过简单的方式提供微带贴片天线,同时使用相同的电介质。 构成:接地板(6)形成为具有预定形状。 贴片(4)与接地板间隔开,并且在贴片处形成凹凸以具有预定图案。 在接地板和贴片之间形成介电层(2)。 凹凸形成为使得凹凸部(11,12)在长度方向上交替配置成直线状。 或者,凹凸形成为使得凹凸部分在行和列方向上相交。 或者,凹凸形成为使得凹凸部沿圆周交替排列。

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