公开(公告)号：WO2008024572A3

公开(公告)日：2008-04-17

申请号：PCT/US2007073837

申请日：2007-07-19

Applicant: FREESCALE SEMICONDUCTOR INC ,  DE FRESART EDOUARD D ,  BAIRD ROBERT W

Inventor： DE FRESART EDOUARD D ,  BAIRD ROBERT W

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/0634 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/42368 ,  H01L29/66734

Abstract: Semiconductor structures and methods are provided for a semiconductor device (40) employing a superjunction structure (41) and overlying trench (91) with embedded control gate (48). The method comprises, forming (52-6, 52-9) interleaved first (70-1, 70-2, 70-3, 70-4, etc.) and second (74-1, 74-2, 74-3, etc.) spaced-apart regions of first (70) and second (74) semiconductor materials of different conductivity type and different mobilities so that, in a first embodiment, the second semiconductor material (74) has a higher mobility for the same carrier type than the first semiconductor material (70), and providing (52-14) an overlying third semiconductor material (82) in which a trench (90, 91) is formed with sidewalls (913) having thereon a fourth semiconductor material (87) that has a higher mobility than the third material (82), adapted to carry current (50) between source regions (86), through the fourth (87) semiconductor material in the trench (91) and the second semiconductor material (74) in the device drift space (42) to the drain (56). In a further embodiment, the first (70) and third (82) semiconductor materials are relaxed materials and the second (74) and fourth (87) semiconductor materials are strained semiconductor materials.

Abstract translation: 为半导体器件（40）提供半导体结构和方法，该半导体器件采用超结构结构（41）和具有嵌入式控制栅极（48）的上覆沟槽（91）。 该方法包括：首先（70-1,70-2,70-3,70-4等）和第二（74-1,74-2,74-3）交错形成（52-6,52-9） 等等）具有不同导电类型和不同迁移率的第一（70）和第二（74）半导体材料的间隔开的区域，使得在第一实施例中，第二半导体材料（74）对于相同载体具有较高的迁移率 并且提供（52-14）上覆第三半导体材料（82），其中沟槽（90,91）形成有其上具有第四半导体材料（87）的侧壁（913） 其具有比第三材料（82）更高的迁移率，其适于在源极区域（86）之间通过沟槽（91）中的第四（87）半导体材料和第二半导体材料（74）中的载流子 设备漂移空间（42）到排水管（56）。 在另一实施例中，第一（70）和第三（82）半导体材料是松弛材料，第二（74）和第四（87）半导体材料是应变半导体材料。

公开(公告)号：WO2008024572A2

公开(公告)日：2008-02-28

申请号：PCT/US2007/073837

申请日：2007-07-19

Applicant: FREESCALE SEMICONDUCTOR INC. ,  DE FRESART, Edouard D. ,  BAIRD, Robert W.

Inventor： DE FRESART, Edouard D. ,  BAIRD, Robert W.

IPC: H01L21/336

CPC classification number: H01L29/7813 ,  H01L29/0634 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/42368 ,  H01L29/66734

Abstract: Semiconductor structures and methods are provided for a semiconductor device (40) employing a superjunction structure (41) and overlying trench (91) with embedded control gate (48). The method comprises, forming (52-6, 52-9) interleaved first (70-1, 70-2, 70-3, 70-4, etc.) and second (74-1, 74-2, 74-3, etc.) spaced-apart regions of first (70) and second (74) semiconductor materials of different conductivity type and different mobilities so that, in a first embodiment, the second semiconductor material (74) has a higher mobility for the same carrier type than the first semiconductor material (70), and providing (52-14) an overlying third semiconductor material (82) in which a trench (90, 91) is formed with sidewalls (913) having thereon a fourth semiconductor material (87) that has a higher mobility than the third material (82), adapted to carry current (50) between source regions (86), through the fourth (87) semiconductor material in the trench (91) and the second semiconductor material (74) in the device drift space (42) to the drain (56). In a further embodiment, the first (70) and third (82) semiconductor materials are relaxed materials and the second (74) and fourth (87) semiconductor materials are strained semiconductor materials.

Abstract translation: 半导体结构和方法被提供用于采用超级结结构（4​​1）并覆盖具有嵌入式控制栅极（48）的沟槽（91）的半导体器件（40）。 该方法包括：形成（52-6,52-9）交错的第一（70-1,70-2,70-3,70-4等）和第二（74-1,74-2,74-3） 等）第一半导体材料（70）和第二半导体材料（74）的不同导电类型和不同迁移率的半导体材料的间隔开的区域，使得在第一实施例中，第二半导体材料（74）对于同一载体 （70），以及提供（52-14）其中形成沟槽（90,91）的上覆的第三半导体材料（82），其上具有第四半导体材料（87）的侧壁（913） ，其具有比第三材料（82）更高的迁移率，适于在源极区域（86）之间，沟槽（91）中的第四（87）半导体材料和第二半导体材料（74）中承载电流（50） 器件漂移空间（42）流向漏极（56）。 在另一实施例中，第一（70）和第三（82）半导体材料是松弛材料，第二（74）和第四（87）半导体材料是应变半导体材料。

公开(公告)号：WO2006132750A3

公开(公告)日：2007-11-01

申请号：PCT/US2006017689

申请日：2006-05-09

Applicant: FREESCALE SEMICONDUCTOR INC ,  DURLAM MARK A ,  CHUNG YOUNG SIR ,  BAIRD ROBERT W ,  ENGEL BRADLEY N

Inventor： DURLAM MARK A ,  CHUNG YOUNG SIR ,  BAIRD ROBERT W ,  ENGEL BRADLEY N

IPC: G11C11/14

CPC classification number: H01L27/222 ,  G11C11/16 ,  H01F17/0006 ,  H01F19/04 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit device (300) includes a magnetic random access memory ("MRAM") architecture (310) and at least one inductance element (3 12, 3 14) formed on the same substrate using the same fabrication process technology. The inductance element, which may be an inductor or a transformer, is formed at the same metal layer (or layers) as the program lines of the MRAM architecture. Any available metal layer in addition to the program line layers can be added to the inductance element to enhance its efficiency. The concurrent fabrication of the MRAM architecture (310) and the inductance element (312, 314) facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate, resulting in three-dimensional integration.

Abstract translation: 集成电路器件（300）包括磁性随机存取存储器（“MRAM”）结构（310）和使用相同的制造工艺技术形成在同一衬底上的至少一个电感元件（31,23）。 可以是电感器或变压器的电感元件形成在与MRAM架构的程序行相同的金属层（或多层）上。 除了编程线层之外，可以将任何可用的金属层添加到电感元件以提高其效率。 MRAM架构（310）和电感元件（312,314）的并行制造有助于在衬底的有源电路块上可用的物理空间的有效且成本有效的使用，导致三维集成。

公开(公告)号：WO2007102885A2

公开(公告)日：2007-09-13

申请号：PCT/US2006060208

申请日：2006-10-25

Applicant: FREESCALE SEMICONDUCTOR INC ,  CHUNG YOUNG SIR ,  BAIRD ROBERT W ,  ENGEL BRADLEY N

Inventor： CHUNG YOUNG SIR ,  BAIRD ROBERT W ,  ENGEL BRADLEY N

IPC: G11B5/33

CPC classification number: G11C11/16 ,  G01L19/16 ,  Y10T428/1114 ,  Y10T428/1143 ,  Y10T428/1171

Abstract: An integrated circuit device (800) is provided which comprises a substrate (801), a conductive line (807) configured to experience a pressure, and a magnetic tunnel junction ("MTJ") core (802) formed between the substrate and the current line. The conductive line (807) is configured to move in response to the pressure, and carries a current which generates a magnetic field. The MTJ core (802) has a resistance value which varies based on the magnetic field. The resistance of the MTJ core (802) therefore varies with respect to changes in the pressure. The MTJ core (802) is configured to produce an electrical output signal which varies as a function of the pressure.

Abstract translation: 提供一种集成电路器件（800），其包括衬底（801），被配置为经受压力的导线（807）和形成在衬底和电流之间的磁性隧道结（“MTJ”）芯（802） 线。 导线807配置为响应于压力移动，并且传送产生磁场的电流。 MTJ磁芯（802）具有基于磁场而变化的电阻值。 因此，MTJ芯（802）的电阻因压力变化而变化。 MTJ内核（802）被配置为产生作为压力的函数而变化的电输出信号。

公开(公告)号：WO2007018811A3

公开(公告)日：2007-07-26

申请号：PCT/US2006025259

申请日：2006-06-28

Applicant: FREESCALE SEMICONDUCTOR INC ,  CHUNG YOUNG SIR ,  BAIRD ROBERT W

Inventor： CHUNG YOUNG SIR ,  BAIRD ROBERT W

IPC: G01R33/02

CPC classification number: G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11C11/16 ,  H01F41/307

Abstract: Methods and apparatus are provided for sensing physical parameters. The apparatus (30) comprises a magnetic tunnel junction (MTJ) (32) and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic electrodes (36, 38) separated by a dielectric (37) configured to permit significant tunneling conduction therebetween. The first magnetic electrode has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.

Abstract translation: 提供了用于感测物理参数的方法和装置。 该装置（30）包括一个磁性隧道结（MTJ）（32）和一个磁场源（34），其磁场（35）与MTJ重叠，并且其与MTJ的接近度响应于传感器的输入而变化。 MTJ包括由电介质（37）分开的第一和第二磁极（36,38），其被配置为允许它们之间的显着的隧道传导。 第一磁极的自旋轴被固定，第二磁极具有自由轴。 磁场源比第一磁极更靠近第二磁极。 通过提供多个电耦合传感器来接收相同的输入但是具有不同的单个响应曲线并且期望地但不是基本上形成在相同的基板上来扩展总传感器动态范围。

公开(公告)号：WO2007053341A2

公开(公告)日：2007-05-10

申请号：PCT/US2006/041148

申请日：2006-10-20

Applicant: FREESCALE SEMICONDUCTOR INC. ,  CHUNG, Young Sir ,  BAIRD, Robert W. ,  DURLAM, Mark A.

Inventor： CHUNG, Young Sir ,  BAIRD, Robert W. ,  DURLAM, Mark A.

IPC: H01L21/00

CPC classification number: H01L43/12 ,  H01L27/228

Abstract: An integrated circuit device (800) is provided which comprises a substrate (801), a conductive line (807) configured to experience a pressure, and a magnetic tunnel junction ("MTJ") core (802) formed between the substrate and the current line. The conductive line (807) is configured to move in response to the pressure, and carries a current which generates a magnetic field. The MTJ core (802) has a resistance value which varies based on the magnetic field. The resistance of the MTJ core (802) therefore varies with respect to changes in the pressure. The MTJ core (802) is configured to produce an electrical output signal which varies as a function of the pressure.

Abstract translation: 提供集成电路器件（800），其包括衬底（801），被配置为经历压力的导线（807）和磁隧道结（“MTJ”）芯（ 802）形成在衬底和电流线之间。 导线（807）被配置为响应于压力而移动，并且承载产生磁场的电流。 MTJ芯（802）具有基于磁场而变化的电阻值。 MTJ芯（802）的电阻因此相对于压力的变化而变化。 MTJ核心（802）被配置为产生电输出信号，其随着压力而变化。

公开(公告)号：WO2007040991A2

公开(公告)日：2007-04-12

申请号：PCT/US2006/036634

申请日：2006-09-20

Applicant: FREESCALE SEMICONDUCTOR INC. ,  CHUNG, Young Sir ,  BAIRD, Robert W. ,  DURLAM, Mark A.

Inventor： CHUNG, Young Sir ,  BAIRD, Robert W. ,  DURLAM, Mark A.

IPC: H01L21/00 ,  H01L21/336

CPC classification number: H01L27/228 ,  G01K7/36 ,  Y10T428/1114

Abstract: Techniques of sensing a temperature of a heat source disposed in a substrate of an integrated circuit (600) are provided. According to one exemplary method, a Magnetic Tunnel Junction ("MTJ") temperature sensor (608) is provided over the heat source (604). The MTJ temperature sensor comprises an MTJ core configured to output a current during operation thereof. The value of the current varies based on a resistance value of the particular MTJ core. The resistance value of the MTJ core varies as a function of the temperature of the heat source. A value of the current of the MTJ core can then be associated with a corresponding temperature of the heat source.

Abstract translation: 提供了感测设置在集成电路（600）的基板中的热源的温度的技术。 根据一个示例性方法，在热源（604）之上提供磁隧道结（“MTJ”）温度传感器（608）。 MTJ温度传感器包括被配置为在其操作期间输出电流的MTJ内核。 电流值根据特定MTJ磁芯的电阻值而变化。 MTJ芯的电阻值随着热源的温度而变化。 然后，MTJ芯的电流的值可以与热源的相应温度相关联。

公开(公告)号：WO2007027381A1

公开(公告)日：2007-03-08

申请号：PCT/US2006/030817

申请日：2006-08-08

Applicant: FREESCALE SEMICONDUCTOR ,  CHUNG, Young, Sir ,  BAIRd, Robert, W. ,  DURLAM, Mark, A. ,  GRYNKEWICH, Gregory, W. ,  SALTER, Eric, J.

Inventor： CHUNG, Young, Sir ,  BAIRd, Robert, W. ,  DURLAM, Mark, A. ,  GRYNKEWICH, Gregory, W. ,  SALTER, Eric, J.

IPC: H01L29/82

CPC classification number: H01L27/228

Abstract: An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a MRAM cell (316) coupled to and formed above the MRAM circuit (318). Additionally a passive device (320) is formed in conjunction with the MRAM cell (316). The passive device (320) can be one or more resistors and one or more capacitor. The concurrent fabrication of the MRAM architecture (314) and the passive device (320) facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate (404, 504), resulting in three-dimensional integration.

Abstract translation: 集成电路器件（300）包括形成在衬底（308）上的衬底（301）和MRAM架构（314）。 MRAM架构（314）包括形成在基板（301）上的MRAM电路（318）。 和耦合到并形成在MRAM电路（318）上方的MRAM单元（316）。 另外，与MRAM单元（316）结合形成无源器件（320）。 无源器件（320）可以是一个或多个电阻器和一个或多个电容器。 MRAM架构（314）和无源器件（320）的并行制造有助于在衬底（404,504）的有源电路块上可用的物理空间的有效和成本有效的使用，导致三维集成。

公开(公告)号：WO2007016010A3

公开(公告)日：2009-04-02

申请号：PCT/US2006028574

申请日：2006-07-24

Applicant: FREESCALE SEMICONDUCTOR INC ,  CHUNG YOUNG SIR ,  BAIRD ROBERT W

Inventor： CHUNG YOUNG SIR ,  BAIRD ROBERT W

IPC: G01R33/02

CPC classification number: G01R33/06 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098

Abstract: Methods and apparatus are provided for sensing physical parameters. The apparatus (30) comprises a magnetic tunnel junction (MTJ) [32] and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic shield (33) is provided at least on a face of the MFS away from the MTJ. The MTJ comprises first and second magnetic electrodes (36, 38) separated by a dielectric (37) configured to permit significant tunneling conduction therebetween. The first magnetic region has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.

Abstract translation: 提供了用于感测物理参数的方法和装置。 该装置（30）包括一个磁性隧道结（MTJ）[32]和一个磁场源（34），其磁场（35）与MTJ重叠，并且其与MTJ的接近度响应于传感器的输入而变化。 至少在远离MTJ的MFS的面上设有磁屏蔽（33）。 MTJ包括由电介质（37）分开的第一和第二磁极（36,38），其被配置为允许它们之间的显着的隧道传导。 第一磁性区域的自旋轴被固定，第二磁极的自由轴自由。 磁场源比第一磁极更靠近第二磁极。 通过提供多个电耦合传感器来接收相同的输入但是具有不同的单个响应曲线并且期望地但不是基本上形成在相同的基板上来扩展总传感器动态范围。

公开(公告)号：WO2007016011A3

公开(公告)日：2008-09-12

申请号：PCT/US2006028576

申请日：2006-07-24

Applicant: FREESCALE SEMICONDUCTOR INC ,  CHUNG YOUNG SIR ,  BAIRD ROBERT W ,  ENGEL BRADLEY N

Inventor： CHUNG YOUNG SIR ,  BAIRD ROBERT W ,  ENGEL BRADLEY N

IPC: G01R33/02

CPC classification number: G01R33/06

Abstract: Methods and apparatus are provided for sensing physical parameters. The apparatus (130) comprises a magnetic tunnel junction (MTJ) (32) and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic electrodes (36, 38) separated by a dielectric (37) configured to permit significant tunneling conduction therebetween. The first magnetic electrode has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate (72).

Abstract translation: 提供了用于感测物理参数的方法和装置。 该装置（130）包括一个磁性隧道结（MTJ）（32）和一个磁场源（34），其磁场（35）与MTJ重叠，并且其与MTJ的接近度响应于传感器的输入而变化。 MTJ包括由电介质（37）分开的第一和第二磁极（36,38），其被配置为允许它们之间的显着的隧道传导。 第一磁极的自旋轴被固定，第二磁极具有自由轴。 磁场源比第一磁极更靠近第二磁极。 通过提供接收相同输入但具有不同单独响应曲线的多个电耦合传感器并期望地但不是基本上形成在同一基板（72）上来扩展总传感器动态范围。