公开(公告)号：WO2008049024B1

公开(公告)日：2008-06-05

申请号：PCT/US2007081682

申请日：2007-10-17

Applicant: LAM RES CORP ,  VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

Inventor： VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

IPC: H01L21/3065

CPC classification number: H01L21/32136 ,  C03C15/00 ,  C03C23/006 ,  H01J37/32623 ,  H01J37/32642

Abstract: In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

Abstract translation: 在等离子体处理系统中，公开了调整一组等离子体处理步骤的方法。 该方法包括在等离子体处理系统的等离子体反应器中撞击包含中性粒子和离子的第一等离子体。 该方法还包括在第一蚀刻步骤中蚀刻衬底上的一组层; 将可移动均匀环定位在所述衬底周围，其中所述均匀环的底表面与所述衬底的顶表面的高度大致相同; 并在等离子体处理系统的等离子体反应器中撞击基本上由中性物质组成的第二等离子体。 该方法还包括在第二蚀刻步骤中蚀刻衬底上的该组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本均匀。

公开(公告)号：WO2006036753A3

公开(公告)日：2007-01-25

申请号：PCT/US2005034034

申请日：2005-09-21

Applicant: LAM RES CORP ,  VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

Inventor： VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

IPC: B44C1/22 ,  C23F1/00 ,  H01L21/00

CPC classification number: C03C15/00 ,  C03C23/006 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/32136

Abstract: In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals (320a) and ions (320b) in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate (303); positioning a movable uniformity ring (302) around the substrate, including an opening (308) that is configured for directing species of plasma towards chuck (314), wherein, a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

Abstract translation: 在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。 该方法包括在等离子体处理系统的等离子体反应器中击打包括中性粒子（320a）和离子（320b）的第一等离子体。 该方法还包括在第一蚀刻步骤中蚀刻在衬底（303）上的一组层; 将可移动均匀环（302）定位在所述基底周围，包括构造成用于将等离子体的种类引导到卡盘（314）的开口（308），其中，所述均匀环的底表面与顶表面大约相同的高度 的基底; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。 该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本均匀。

公开(公告)号：WO2004108617A2

公开(公告)日：2004-12-16

申请号：PCT/US2004/016857

申请日：2004-05-28

Applicant: LAM RESEARCH CORPORATION ,  KIEHLBAUCH, Mark, W. ,  DAUGHERTY, John, E.

Inventor： KIEHLBAUCH, Mark, W. ,  DAUGHERTY, John, E.

IPC: C03C

CPC classification number: C03C23/0075 ,  C03C15/00 ,  C03C19/00 ,  C03C2204/08 ,  Y10S438/905 ,  Y10S438/906

Abstract: Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed surface to achieve a desired surface morphology. Quartz glass sealing surfaces of the component also can be finished by the methods. Plasma-exposed surface and sealing surfaces of the same component can be finished to different surface morphologies from each other.

Abstract translation: 提供表面处理用于等离子体处理装置的部件的方法。 该组件包括至少一个等离子体暴露的石英玻璃表面。 该方法包括机械抛光，化学蚀刻和清洁等离子体暴露表面以实现期望的表面形态。 石英玻璃密封面的组件也可以通过这种方法完成。 等离子体暴露的表面和相同部件的密封表面可以被完成为不同的表面形态彼此。

公开(公告)号：WO02054453A9

公开(公告)日：2003-08-21

申请号：PCT/US0143149

申请日：2001-11-21

Applicant: LAM RES CORP ,  O'DONNELL ROBERT J ,  CHANG CHRISTOPHER C ,  DAUGHERTY JOHN E

Inventor： O'DONNELL ROBERT J ,  CHANG CHRISTOPHER C ,  DAUGHERTY JOHN E

IPC: C23C30/00 ,  C23C14/08 ,  C23C16/40 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/00 ,  C23C16/44

CPC classification number: H01J37/32477 ,  C23C14/083 ,  C23C16/405 ,  Y10T428/265

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al2O3). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.

Abstract translation: 诸如等离子体室的半导体加工设备的耐腐蚀部件包括氧化锆增韧陶瓷材料作为部件的最外表面。 该组件可以完全由陶瓷材料制成，或者陶瓷材料可以作为涂层提供在诸如铝或铝合金，不锈钢或难熔金属的基底上。 氧化锆增韧陶瓷可以是四方晶氧化锆多晶（TZP）材料，部分稳定的氧化锆（PSZ）或氧化锆分散体增韧陶瓷（ZTC）如氧化锆增韧的氧化铝（四方晶氧化锆颗粒分散在Al2O3中）。 在陶瓷氧化锆增韧涂层的情况下，可以在组件和陶瓷涂层之间提供一个或多个中间层。 为了促进陶瓷涂层的粘合，可以在沉积陶瓷涂层之前对组分表面或中间层表面进行表面粗糙化处理。

公开(公告)号：WO02091453A9

公开(公告)日：2003-07-03

申请号：PCT/US0214102

申请日：2002-05-03

Applicant: LAM RES CORP ,  SINGH HARMEET ,  DAUGHERTY JOHN E ,  ULLAL SAURABH J

Inventor： SINGH HARMEET ,  DAUGHERTY JOHN E ,  ULLAL SAURABH J

IPC: B08B7/00 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01J37/32467 ,  B08B7/00 ,  H01J37/321 ,  H01J37/32862 ,  H01J37/32935

Abstract: A method for cleaning a processing chamber is provided. The method initiates with introducing a fluorine containing gaseous mixture into a processing chamber. Then, a plasma is created from the fluorine containing gaseous mixture in the processing chamber. Next, a chamber pressure is established that corresponds to a threshold ion energy in which ions of the plasma clean inner surfaces of the processing chamber without leaving a residue. A method for substantially eliminating residual aluminum fluoride particles deposited by an in-situ cleaning process for a semiconductor processing chamber and a plasma processing system for executing an in-situ cleaning process are also provided.

Abstract translation: 提供了一种用于清洁处理室的方法。 该方法通过将含氟气体混合物引入处理室来启动。 然后，从处理室中的含氟气体混合物产生等离子体。 接下来，建立对应于阈值离子能量的室压力，其中等离子体的离子清洁处理室的内表面而不留下残留物。 还提供了用于基本上消除通过用于半导体处理室的原位清洁工艺沉积的残余氟化铝颗粒的方法和用于执行原位清洁工艺的等离子体处理系统。

公开(公告)号：WO2002079538A1

公开(公告)日：2002-10-10

申请号：PCT/US2002/006651

申请日：2002-03-21

Applicant: LAM RESEARCH CORPORATION ,  O'DONNELL, Robert, J. ,  DAUGHERTY, John, E.

Inventor： O'DONNELL, Robert, J. ,  DAUGHERTY, John, E.

IPC: C23C16/44

CPC classification number: C04B35/50 ,  B01J19/0073 ,  B01J19/02 ,  B01J2219/0218 ,  B01J2219/024 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/3817 ,  C04B2235/80 ,  C23C16/4404 ,  C23C28/042 ,  H01J37/32477 ,  Y10S156/915

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises a cerium oxide containing ceramic material as an outermost surface of the component. The cerium oxide containing ceramic material comprises one or more cerium oxides as the single largest constituent thereof. The component can be made entirely of the cerium oxide containing ceramic material or, alternatively, the cerium oxide containing ceramic can be provided as a layer on a substrate such as aluminum or an aluminum alloy, a ceramic material, stainless steel, or a refractory metal. The cerium oxide containing ceramic layer can be provided as a coating by a technique such as plasma spraying. One or more intermediate layers may be provided between the component and the cerium oxide containing ceramic coating. To promote adhesion of the cerium oxide containing ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the cerium oxide containing ceramic coating.

Abstract translation: 诸如等离子体室的半导体加工设备的耐腐蚀组分包括含有氧化铈的陶瓷材料作为组分的最外表面。 含有氧化铈的陶瓷材料包含一种或多种作为其最大成分的氧化铈。 该组分可以完全由含氧化铈的陶瓷材料制成，或者可选地，含氧化铈陶瓷可以作为基底如铝或铝合金，陶瓷材料，不锈钢或难熔金属 。 含氧化铈陶瓷层可以通过诸如等离子喷涂的技术作为涂层提供。 可以在组分和含氧化铈的陶瓷涂层之间提供一个或多个中间层。 为了促进含氧化铈陶瓷涂层的粘附，可以在沉积含氧化铈陶瓷涂层之前对组分表面或中间层表面进行表面粗糙化处理。

公开(公告)号：WO02054454A2

公开(公告)日：2002-07-11

申请号：PCT/US0143153

申请日：2001-11-21

Applicant: LAM RES CORP ,  O'DONNELL ROBERT J ,  DAUGHERTY JOHN E ,  CHANG CHRISTOPHER C

Inventor： O'DONNELL ROBERT J ,  DAUGHERTY JOHN E ,  CHANG CHRISTOPHER C

IPC: C23C14/06 ,  B01J19/02 ,  C23C16/02 ,  C23C16/27 ,  C23C16/44 ,  C23C30/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/00

CPC classification number: H01J37/32495 ,  B01J19/0073 ,  B01J19/02 ,  B01J2219/0231 ,  B01J2219/025 ,  C23C16/0272 ,  C23C16/27 ,  C23C16/4404 ,  Y10T428/26 ,  Y10T428/30 ,  Y10T428/31678

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.

Abstract translation: 诸如等离子体室的半导体加工设备的耐腐蚀部件包括含金刚石的表面及其制造方法。

公开(公告)号：WO2006036753A2

公开(公告)日：2006-04-06

申请号：PCT/US2005/034034

申请日：2005-09-21

Applicant: LAM RESEARCH CORPORATION ,  VAHEDI, Vahid ,  DAUGHERTY, John, E ,  SINGH, Harmeet ,  CHEN, Anthony

Inventor： VAHEDI, Vahid ,  DAUGHERTY, John, E ,  SINGH, Harmeet ,  CHEN, Anthony

IPC: C23F1/00 ,  B44C1/22

CPC classification number: C03C15/00 ,  C03C23/006 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/32136

Abstract: In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

Abstract translation: 在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。 该方法包括在等离子体处理系统的等离子体反应器中击打包含中性粒子和离子的第一等离子体。 该方法还包括在第一蚀刻步骤中蚀刻在衬底上的一组层; 将可移动均匀环定位在基底周围，其中均匀环的底表面与基底的顶表面大致相同的高度; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。 该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本上是均匀的。

公开(公告)号：WO2002091453A1

公开(公告)日：2002-11-14

申请号：PCT/US2002/014102

申请日：2002-05-03

Applicant: LAM RESEARCH CORPORATION ,  SINGH, Harmeet ,  DAUGHERTY, John, E. ,  ULLAL, Saurabh, J.

Inventor： SINGH, Harmeet ,  DAUGHERTY, John, E. ,  ULLAL, Saurabh, J.

IPC: H01L21/3213

CPC classification number: H01J37/32467 ,  B08B7/00 ,  H01J37/321 ,  H01J37/32862 ,  H01J37/32935

Abstract: A method for cleaning a processing chamber is provided. The method initiates with introducing a fluorine containing gaseous mixture into a processing chamber. Then, a plasma is created from the fluorine containing gaseous mixture in the processing chamber. Next, a chamber pressure is established that corresponds to a threshold ion energy in which ions of the plasma clean inner surfaces of the processing chamber without leaving a residue. A method for substantially eliminating residual aluminum fluoride particles deposited by an in-situ cleaning process for a semiconductor processing chamber and a plasma processing system for executing an in-situ cleaning process are also provided.

Abstract translation: 提供了一种用于清洁处理室的方法。 该方法通过将含氟气体混合物引入处理室来启动。 然后，从处理室中的含氟气体混合物产生等离子体。 接下来，建立对应于阈值离子能量的室压力，其中等离子体的离子清洁处理室的内表面而不残留物。 还提供了用于基本上消除通过用于半导体处理室的原位清洁工艺沉积的残余氟化铝颗粒的方法和用于执行原位清洁工艺的等离子体处理系统。

公开(公告)号：WO2002068129A1

公开(公告)日：2002-09-06

申请号：PCT/US2001/043152

申请日：2001-11-21

Applicant: LAM RESEARCH CORPORATION ,  O'DONNELL, Robert, J. ,  CHANG, Christopher, C. ,  DAUGHERTY, John, E.

Inventor： O'DONNELL, Robert, J. ,  CHANG, Christopher, C. ,  DAUGHERTY, John, E.

IPC: B05D1/02

CPC classification number: H01J37/32467 ,  H01J37/32477 ,  H01J37/32559

Abstract: A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non- anodized surface. The liquid crystalline polymer can also be provided on an alumina component. The liquid crystalline polymer can be deposited by a method such as plasma spraying. The liquid crystalline polymer may also be provided as a preformed sheet or other shape adapted to cover the exposed surfaces of the reaction chamber. Additionally, the reactor components may be made entirely from liquid crystalline polymer by machining the component from a solid block of liquid crystalline polymer or molding the component from the polymer. The liquid crystalline polymer may contain reinforcing fillers such as glass or mineral fillers.

Abstract translation: 等离子体室的耐腐蚀组分包括液晶聚合物。 在优选的实施方案中，液晶聚合物（LCP）设置在具有阳极氧化或非阳极氧化表面的铝组分上。 液晶聚合物也可以提供在氧化铝组分上。 液晶聚合物可以通过诸如等离子喷涂的方法沉积。 液晶聚合物也可以被提供为预成型片或适于覆盖反应室暴露表面的其它形状。 此外，反应器组分可以通过从液晶聚合物的固体块中加工组分或从聚合物模塑组分而完全由液晶聚合物制成。 液晶聚合物可以含有增强填料如玻璃或矿物填料。