公开(公告)号：WO2006057711A3

公开(公告)日：2006-07-13

申请号：PCT/US2005035596

申请日：2005-10-03

Applicant: TOKYO ELECTRON LTD ,  IBM ,  SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  HARA MASAMICHI ,  KUROIWA DAISUKE ,  MALHOTRA SANDRA G ,  MCFEELY FENTON ,  YOUNG ROBERT R JR

Inventor： SUZUKI KENJI ,  GUIDOTTI EMMANUEL ,  LEUSINK GERRIT J ,  HARA MASAMICHI ,  KUROIWA DAISUKE ,  MALHOTRA SANDRA G ,  MCFEELY FENTON ,  YOUNG ROBERT R JR

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/16

Abstract: In a solid precursor evaporation system (50, 150, 300, 300') configured for use in a thin film deposition system (1, 100), such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays (330, 340) of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray (330, 340), using one or more of dipping techniques, spin-on techniques, and sintering techniques.

Abstract translation: 在配置用于薄膜沉积系统（1,100）中的固体前驱体蒸发系统（50,150,300,300'）中，例如热化学气相沉积（TCVD），用于制备一个或多个托盘（ 描述了固体前体的形式。 可以使用浸渍技术，旋涂技术和烧结技术中的一种或多种，​​在涂层基材例如托盘（330,340）上形成固体前体。

公开(公告)号：WO2006057710A1

公开(公告)日：2006-06-01

申请号：PCT/US2005/035583

申请日：2005-10-03

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji ,  GUIDOTTI, Emmanuel ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke

Inventor： SUZUKI, Kenji ,  GUIDOTTI, Emmanuel ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke

IPC: C23C16/448

CPC classification number: C23C16/16 ,  C23C16/4481

Abstract: A replaceable precursor tray for use with a high conductance, multi-tray solid precursor evaporation system (50, 150, 300, 300') coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system (50, 150, 300, 300') is configured to be coupled to the process chamber (10, 110) of a thin film deposition system (1, 100), and it includes a base tray (330) with one or more stackable upper trays (340). Each tray (330, 340) is configured to support and retain film precursor (350) in, for example, solid powder form or solid tablet form. Additionally, each tray (330, 340) is configured to provide for a high conductance flow of carrier gas over the film precursor (350) while the film precursor (350) is heated. For example, the carrier gas flows inward over the film precursor (350), and vertically upward through a flow channel (318) within the stackable trays (370, 370') and through an outlet (322) in the solid precursor evaporation system (50, 150, 300, 300').

Abstract translation: 用于与高电导，多托盘固体前体蒸发系统（50,150,300,300'）结合高电导蒸气输送系统使用的可替换的前体托盘被描述为通过增加固体前体的暴露表面积来提高沉积速率 。 多托盘固体前体蒸发系统（50,150,300,300'）被配置为耦合到薄膜沉积系统（1,100）的处理室（10,110），并且其包括底盘 （330）具有一个或多个可堆叠的上托盘（340）。 每个托盘（330,340）被配置为以例如固体粉末形式或固体片剂形式支撑并保持膜前体（350）。 另外，每个托盘（330,340）构造成在膜前体（350）被加热的同时提供载气在膜前体（350）上的高电导流。 例如，载气在膜前体（350）内向内流动，并且垂直向上流过可堆叠托盘（370,370'）内的流动通道（318）并且通过固体前体蒸发系统中的出口（322） 50,150,300,300'）。

公开(公告)号：WO2006038954A1

公开(公告)日：2006-04-13

申请号：PCT/US2005/025515

申请日：2005-07-19

Applicant: TOKYO ELECTRON LIMITED ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  YAMASAKI, Hideaki ,  SUZUKI, Kenji ,  GUIDOTTI, Emmanuel ,  MOSCA, Enrico ,  LEUSINK, Gert, J. ,  KAWANO, Yumiko ,  MCFEELY, Fenton, R. ,  MALHOTRA, Sandra, G.

Inventor： YAMASAKI, Hideaki ,  SUZUKI, Kenji ,  GUIDOTTI, Emmanuel ,  MOSCA, Enrico ,  LEUSINK, Gert, J. ,  KAWANO, Yumiko ,  MCFEELY, Fenton, R. ,  MALHOTRA, Sandra, G.

IPC: H01L21/285

CPC classification number: H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76873

Abstract: A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.

Abstract translation: 提出了一种用于在具有高沉积速率，低颗粒污染和在图案化衬底上良好的阶梯覆盖的衬底上沉积Ru和Re金属层的方法。 该方法包括在处理室中提供衬底，在处理室中引入工艺气体，其中处理气体包括载气和选自羰基钌羰基前体和铼羰基前体的金属前体。 该方法还包括通过热化学气相沉积工艺在小于约20mTorr的处理室压力下在衬底上沉积Ru或Re金属层。