公开(公告)号：US20090146082A1

公开(公告)日：2009-06-11

申请号：US11719320

申请日：2005-11-15

Applicant: Gerhard Stengl ,  Herbert Buschbeck ,  Robert Nowak

Inventor： Gerhard Stengl ,  Herbert Buschbeck ,  Robert Nowak

IPC: G21K5/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177

Abstract: In a pattern-lock system of particle-beam apparatus wherein the imaging of the pattern is done by means of at least two consecutive projector stages of the projecting system, reference marks are imaged upon registering means to determine the position of the particle-beam, at the location of an intermediary image of the reference marks produced by a non-final projector stage, with the registering means being positioned at locations of nominal positions of an intermediary imaging plane. Furthermore, to produce a scanning movement over the registering means the reference beamlets are shifted laterally by means of deflector means provided in the pattern defining means in dependence of a time-dependent electric voltage.

Abstract translation: 在粒子束装置的图案锁定系统中，其中通过投影系统的至少两个连续的投影台进行图案的成像，参考标记在登记装置上成像以确定粒子束的位置， 在由非最终投影仪舞台产生的参考标记的中间图像的位置处，其中登记装置位于中间成像平面的标称位置的位置。 此外，为了在登记装置上产生扫描运动，根据时间相关的电压，通过设置在图案定义装置中的偏转装置横向移动参考子束。

公开(公告)号：US20080258084A1

公开(公告)日：2008-10-23

申请号：US11816353

申请日：2006-02-16

Applicant: Elmar Platzgummer ,  Stefan Cernusca ,  Gerhard Stengl

Inventor： Elmar Platzgummer ,  Stefan Cernusca ,  Gerhard Stengl

IPC: G21K5/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/31788 ,  H01J2237/31793

Abstract: A particle-beam projection processing apparatus for irradiating a target, with an illumination system for forming a wide-area illuminating beam of energetic electrically charged particles; a pattern definition means for positioning an aperture pattern in the path of the illuminating beam; and a projection system for projecting the beam thus patterned onto a target to be positioned after the projection system. A foil located across the path of the patterned beam is positioned between the pattern definition means and the position of the target at a location close to an image of the aperture pattern formed by the projection system.

Abstract translation: 一种用于照射目标的粒子束投影处理装置，具有用于形成能量带电粒子的广域照明光束的照明系统; 用于将光圈图案定位在照明光束的路径中的图案定义装置; 以及投影系统，用于将如此图案化的光束投影到待投影系统上的待定位的靶上。 位于图案化光束的路径上的箔位于图案定义装置之间并且位于靠近由投影系统形成的孔径图案的图像的位置处的目标的位置。

公开(公告)号：US20070125956A1

公开(公告)日：2007-06-07

申请号：US11700468

申请日：2007-01-31

Applicant: Herbert Buschbeck ,  Gertraud Lammer ,  Alfred Chalupka ,  Robert Nowak ,  Elmar Platzgummer ,  Gerhard Stengl

Inventor： Herbert Buschbeck ,  Gertraud Lammer ,  Alfred Chalupka ,  Robert Nowak ,  Elmar Platzgummer ,  Gerhard Stengl

IPC: H01J3/14 ,  G21K1/08

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/304 ,  H01J2237/024 ,  H01J2237/10 ,  H01J2237/216 ,  H01J2237/30455

Abstract: In a particle-optical projection system a pattern is imaged onto a target by means of energetic electrically charged particles. The pattern is represented in a patterned beam of said charged particles emerging from the object plane through at least one cross-over; it is imaged into an image with a given size and distortion. To compensate for the Z-deviation of the image position from the actual positioning of the target (Z denotes an axial coordinate substantially parallel to the optical axis), without changing the size of the image, the system includes a position detector for measuring the Z-position of several locations of the target, and a controller for calculating modifications of selected lens parameters of the final particle-optical lens and controlling said lens parameters according to said modifications.

Abstract translation: 在粒子光学投影系统中，通过能量带电粒子将图案成像到靶上。 所述图案表示在所述带电粒子的图案化束中，所述带电粒子通过至少一个交叉从对象平面出射; 它被成像为具有给定尺寸和失真的图像。 为了补偿图像位置的Z偏差与目标的实际定位（Z表示基本上平行于光轴的轴向坐标），而不改变图像的尺寸，系统包括用于测量Z的位置检测器 - 位置，以及用于计算最终粒子 - 光学透镜的所选透镜参数的修改并根据所述修改来控制所述透镜参数的控制器。

公开(公告)号：US5436460A

公开(公告)日：1995-07-25

申请号：US058911

申请日：1993-04-26

Applicant: Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach

Inventor： Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach

IPC: H01J37/30 ,  H01J37/317 ,  H01J37/10

CPC classification number: H01J37/3007

Abstract: A system for ion-beam imaging of a structure of a mask on a wafer has a two-lens set between the mask and the wafer which is made up of a preferably accelerating Einzel lens proximal to the mask and an asymmetric accelerating Einzel proximal to the wafer.

Abstract translation: 用于晶片上掩模结构的离子束成像的系统具有设置在掩模和晶片之间的双透镜，其由靠近掩模的优选加速的Einzel透镜和靠近该掩模的不对称加速的Einzel构成 晶圆。

公开(公告)号：US5350924A

公开(公告)日：1994-09-27

申请号：US912099

申请日：1992-07-10

Applicant: Gerhard Stengl ,  Alfred Chalupka

Inventor： Gerhard Stengl ,  Alfred Chalupka

IPC: G03F7/20 ,  H01J37/30 ,  H01L21/027 ,  H01J37/317

CPC classification number: H01J37/3007

Abstract: A system for ion-beam imaging of a structure of a mask on a wafer has a two-lens set between the mask and the wafer which is one of the following combinations: (a) two accelerating Einzel lenses; (b) an accelerating immersion lens and a decelerating immersion lens wherein the accelerating immersion lens is the first collecting lens following the mask; (c) an accelerating immersion lens and a decelerating asymmetric Einzel lens wherein the accelerating immersion lens is the first collecting lens following the mask; (d) an accelerating asymmetric Einzel lens and a decelerating immersion lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask; and (e) an accelerating asymmetric Einzel lens and a decelerating asymmetric Einzel lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask.

Abstract translation: 用于晶片上掩模结构的离子束成像的系统具有在掩模和晶片之间设置的双透镜，其为以下组合之一：（a）两个加速的Einzel透镜; （b）加速浸没透镜和减速浸没透镜，其中加速浸没透镜是跟随掩模的第一收集透镜; （c）加速浸没透镜和减速非对称Einzel透镜，其中加速浸没透镜是跟随掩模的第一收集透镜; （d）加速非对称Einzel透镜和减速浸没透镜，其中加速非对称Einzel透镜是跟随掩模的第一收集透镜; 和（e）加速的非对称Einzel透镜和减速的非对称Einzel透镜，其中加速非对称的Einzel透镜是跟随掩模的第一个收集透镜。

公开(公告)号：US5317161A

公开(公告)日：1994-05-31

申请号：US888661

申请日：1992-05-21

Applicant: Alfred Chalupka ,  Gertraud Lammer ,  Gerhard Stengl ,  Peter Wolf ,  Johannes Fegerl

Inventor： Alfred Chalupka ,  Gertraud Lammer ,  Gerhard Stengl ,  Peter Wolf ,  Johannes Fegerl

IPC: G03F7/20 ,  H01J27/02 ,  H01J27/10 ,  H01J37/08 ,  H01J37/12 ,  H01L21/027

CPC classification number: H01J27/10 ,  H01J37/08 ,  H01J37/12

Abstract: In addition to the three electrodes of a unipotential lens following a plasma chamber, an ion source for ion beam lithography or ion beam semiconductor or the like has a fourth electrode which is at the same potential as the second electrode and at a potential lower than the potential of the first and third electrodes The result is improved resolution.

Abstract translation: 除了等离子体室之后的单能透镜的三个电极之外，用于离子束光刻或离子束半导体等的离子源具有与第二电极处于相同电位并且具有比第二电极低的电位的第四电极 第一和第三电极的电位结果是提高了分辨率。

公开(公告)号：US4967088A

公开(公告)日：1990-10-30

申请号：US201959

申请日：1988-06-02

Applicant: Gerhard Stengl ,  Hans Loschner ,  Ernst Hammell ,  Hilton F. Glavish

Inventor： Gerhard Stengl ,  Hans Loschner ,  Ernst Hammell ,  Hilton F. Glavish

IPC: H01L21/30 ,  G03F9/02 ,  H01J37/317 ,  H01L21/027

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/1516 ,  H01J2237/30438 ,  H01J2237/31755 ,  H01J2237/31776

Abstract: In an ion projection lithography system, apparatus and methods for positioning on a substrate or wafer at a target station an image of structures provided on a mask, wherein the mask includes reference marks to provide ion reference beams about the image field, the target station includes marks and the beam of the system is controlled to establish a coincidence of the marks on the mask with the corresponding marks at the target station. The ion projection system shown includes in this optical path an electrostatic multipole, means for rotational adjustment of the image relative to the substrate, and means for correcting the scale of the image. Embodiments are shown in which the marks at the target station are carried on the wafer or on a reference block which is positionally related to the wafer, e.g., by an interferometer. In the case of the reference block, it has an aperture corresponding in size to the mask image to be formed on the substrate so that the marks are disposed outside the optical path used to generate the image on the substrate. Detectors provided for secondary radiation emitted by the marks at the target station as a result of the ion reference beams passing through the marks on the mask produce signals that control the multipole, the means for relative rotational adjustment of the image on the substrate and the means for scale correction. Special masks are provided that enable the reference beams to reach their respective marks at the target station during blanking and unblanking of the mask, permitting operation of the alignment system at both times. The reference beams are shielded from the image beam and are scanned repeatedly over their respective marks at the target station.

Abstract translation: 在离子投影光刻系统中，用于在目标站上在基板或晶片上定位设置在掩模上的结构的图像的装置和方法，其中所述掩模包括用于提供关于图像场的离子参考光束的参考标记，所述目标站包括 控制系统的标记和光束，以使掩模上的标记与目标工位的相应标记重合。 所示的离子投影系统在该光路中包括静电多极，用于相对于衬底旋转调整图像的装置，以及用于校正图像尺度的装置。 示出了实施例，其中目标站处的标记被承载在晶片上或者例如通过干涉仪位于与晶片相关的参考块上。 在参考块的情况下，其具有对应于要在衬底上形成的掩模图像的尺寸的孔，使得标记设置在用于在衬底上产生图像的光路的外侧。 由于通过掩模上的标记的离子参考光束，由目标台上的标记发射的二次辐射的检测器产生控制多极的信号，用于基板上的图像的相对旋转调整的装置和装置 用于刻度校正。 提供特殊掩模，使得参考光束能够在掩模的遮蔽和非曝光期间在目标工位达到其各自的标记，从而允许两次对准系统的操作。 参考光束与图像束屏蔽，并在目标工位上重复扫描它们各自的标记。

公开(公告)号：US4924104A

公开(公告)日：1990-05-08

申请号：US244786

申请日：1988-09-09

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: G03F1/74 ,  H01J37/30 ,  H01L21/027

CPC classification number: G03F1/74 ,  H01J37/3005 ,  H01J37/3007

Abstract: The invention concerns an ion beam apparatus, by means of which defects in a substrate can be recognized, and repaired under continuous control. For this purpose, the ion beam apparatus, in its beams path, after the ion source, is equipped with a mask exhibiting a preferrably circular hole and between ion source and mask with a controllable lens for the purpose of modification of the divergence angle under which the beam strikes the mask. The aperture of the mask is imaged upon the substrate. In this way the intensity of the ion beam may be varied for use in inspecting a substrate for defects and subsequently removing the detected defects.

Abstract translation: 本发明涉及一种离子束装置，通过该离子束装置可以识别基板中的缺陷并在连续控制下进行修复。 为此，离子束装置在离子源之后的光束路径上配备有显示出优选圆形孔的掩模，并且具有可控透镜的离子源与掩模之间，用于改变发散角的目的 光束撞击面罩。 掩模的孔径被成像在基底上。 以这种方式，可以改变离子束的强度以用于检查衬底的缺陷并随后去除检测到的缺陷。

公开(公告)号：US07772574B2

公开(公告)日：2010-08-10

申请号：US11719320

申请日：2005-11-15

Applicant: Gerhard Stengl ,  Herbert Buschbeck ,  Robert Nowak

Inventor： Gerhard Stengl ,  Herbert Buschbeck ,  Robert Nowak

IPC: G21K5/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3177

Abstract: In a pattern-lock system of particle-beam apparatus wherein the imaging of the pattern is done by means of at least two consecutive projector stages of the projecting system, reference marks are imaged upon registering means to determine the position of the particle-beam, at the location of an intermediary image of the reference marks produced by a non-final projector stage, with the registering means being positioned at locations of nominal positions of an intermediary imaging plane. Furthermore, to produce a scanning movement over the registering means the reference beamlets are shifted laterally by means of deflector means provided in the pattern defining means in dependence of a time-dependent electric voltage.

Abstract translation: 在粒子束装置的图案锁定系统中，其中通过投影系统的至少两个连续的投影台进行图案的成像，参考标记在登记装置上成像以确定粒子束的位置， 在由非最终投影仪舞台产生的参考标记的中间图像的位置处，其中登记装置位于中间成像平面的标称位置的位置。 此外，为了在登记装置上产生扫描运动，根据时间相关的电压，通过设置在图案定义装置中的偏转装置横向移动参考子束。

公开(公告)号：US20090140160A1

公开(公告)日：2009-06-04

申请号：US11988922

申请日：2006-07-20

Applicant: Elmar Platzgummer ,  Gerhard Stengl

Inventor： Elmar Platzgummer ,  Gerhard Stengl

IPC: H01J3/14

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/0435

Abstract: A beam manipulating arrangement for a multi beam application using charged particles comprises a multi-aperture plate having plural apertures traversed by beams of charged particles. A frame portion of the multi-aperture plate is heated to reduce temperature gradients within the multi-aperture plate. Further, a heat emissivity of a surface of the multi-aperture plate may be higher in some regions as compared to other regions in view of also reducing temperature gradients.

Abstract translation: 用于使用带电粒子的多光束施加的光束操纵装置包括具有由带电粒子束穿过的多个孔的多孔板。 加热多孔板的框架部分以降低多孔板内的温度梯度。 此外，考虑到降低温度梯度，与其他区域相比，多孔板的表面的发热率在一些区域可能更高。