SECONDARY CELL CHARGER AND CHARGING METHOD
    13.
    发明公开
    SECONDARY CELL CHARGER AND CHARGING METHOD 审中-公开
    二次电池,充电器和充电过程

    公开(公告)号:EP1507326A4

    公开(公告)日:2008-08-06

    申请号:EP03725819

    申请日:2003-05-16

    Abstract: A secondary cell charger and a secondary cell charging method for preventing undercharging or supercharging of a secondary cell and enabling reliable quick charging. After a predetermined charging applied voltage value Es above a full-charge balanced voltage value Eeq is applied to a secondary cell (1) for a predetermined time, the applied voltage is changed to the full-charge balanced voltage value Eeq. The value i of the current flowing at this time is measured and compared with a predetermined charging end reference current value J. If the current value i is greater than the predetermined charging end reference current value J, the predetermined charging applied voltage value Es is applied to the secondary cell (1) again, and the flow is repeated. Whereas, if the current value i is less than the predetermined charging end reference current value J, the charging of the secondary cell (1) is stopped.

    SINGLE CRYSTAL SILICON CARBIDE AND METHOD FOR PRODUCING THE SAME
    15.
    发明公开
    SINGLE CRYSTAL SILICON CARBIDE AND METHOD FOR PRODUCING THE SAME 审中-公开
    的单晶碳化硅及其制造方法

    公开(公告)号:EP1403404A4

    公开(公告)日:2007-08-01

    申请号:EP01934532

    申请日:2001-06-04

    CPC classification number: C30B19/04 C30B29/36

    Abstract: A single crystal silicon carbide which has no crystallite grain boundary inside and contains micro−pipe defects in a density of 1/cm 2 or less, and preferably has a terrace having a width of 10 μm or more and a multi−molecular layer step having a three−molecular layer as the minimum unit; a method for producing the single crystal silicon carbide which comprises a high temperature liquid phase growth method using an extremely thin Si melt layer. The method is advantageous in that it does not require precise control of the temperature difference between the surface of a growing crystal and a polycrystalline raw material and that the addition of impurities can be controlled.

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