公开(公告)号：DE19643903B4

公开(公告)日：2006-07-06

申请号：DE19643903

申请日：1996-10-30

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMM AUTHORITY SEOUL

Inventor： RYUM BYUNG-RYUL ,  HAN TAE-HYEON ,  CHO DEOK-HO ,  LEE SOO-MIN ,  PYUN KWANG-EUI

IPC: H01L21/331 ,  H01L29/70 ,  H01L29/08 ,  H01L29/737

Abstract: An improved method for fabricating a heterojunction bipolar transistor which includes the steps of forming a buried collector, a collector thin film, and a collector sinker on a semiconductor substrate in order, forming a first silicon oxide film, a base electrode polysilicon layer, a nitride film, and an oxidation film on a resulting substrate exposing the first silicon oxidation film, forming a spacer insulation film at the lateral side of the exposed region, and defining an activation region, exposing the collector thin film of the activation region using a mask, and forming an auxiliary lateral film for an isolation of the device, forming a selective collector region by ion-implantating a dopant to the activation region which is limited by the auxiliary lateral film, removing the auxiliary lateral film, etching the exposed portion in an anisotropic etching method, and forming a shallow trench for a device isolation, forming a polysilicon lateral film to have a height which is the same as the height of the base electrode polysilicon layer on the shallow trench, and forming a self-aligned base.

公开(公告)号：GB2365190B

公开(公告)日：2004-02-04

申请号：GB0031064

申请日：2000-12-20

Applicant: KOREA TELECOMM AUTHORITY

Inventor： CHI HYUNG IN ,  HUI IL CHANG ,  CHUNG IL KIM

IPC: G06Q20/10 ,  G06Q20/32 ,  G06Q10/00 ,  G06Q40/00 ,  G06Q40/02 ,  G06Q40/04 ,  G06Q50/00 ,  H04B7/26 ,  H04W4/14 ,  H04W4/24 ,  H04W12/00 ,  H04W12/06 ,  H04W60/00 ,  H04W64/00 ,  H04W88/18 ,  G07F7/10 ,  H04Q7/22

Abstract: The present invention relates to a money service apparatus for an IMT-2000 network and a method of the same which implements the information concerning a location of an IMT-2000 ID card and a terminal and functions for indicating the amount of money at the current rate of the foreign currency to a subscriber's own country's currency, remitting payment, making money transfer, and delivering a written notice and public notice. The money service apparatus for an IMT-2000 network includes a money service apparatus wherein the identification numbers of a terminal connected with the IMT-2000 network and a card are recognized and are provided to the subscriber, wherein a money exchange information service is provided; wherein the current location of the subscriber is searched when the subscriber requests the information on the amount of money that is converted to the local country's currency where he is located, applying the money exchange rate to his own country's currency, and then the information is provided to the termina; wherein in the case that the subscriber sets an called subscriber and requests a cash transfer to the called subscriber side, the money exchange information is searched through the money exchange information service, and the cash is provided to the called subscriber, and wherein in the case that the subscriber sets a bank account and requests a cash transfer to the bank, the money exchange rate information is searched through the money exchange information service, and the money transfer is performed to the bank.

公开(公告)号：GB2365190A

公开(公告)日：2002-02-13

申请号：GB0031064

申请日：2000-12-20

Applicant: KOREA TELECOMM AUTHORITY

Inventor： CHI HYUNG IN ,  HUI IL CHANG ,  CHUNG IL KIM

IPC: G06Q20/10 ,  G06Q20/32 ,  G06Q10/00 ,  G06Q40/00 ,  G06Q40/02 ,  G06Q40/04 ,  G06Q50/00 ,  H04B7/26 ,  H04W4/14 ,  H04W4/24 ,  H04W12/00 ,  H04W12/06 ,  H04W60/00 ,  H04W64/00 ,  H04W88/18 ,  G07F7/10 ,  H04Q7/22

Abstract: The present invention relates to a money service apparatus for an IMT-2000 network and a method of the same which implements the information concerning a location of an IMT-2000 ID card and a terminal and functions for indicating the amount of money at the current rate of the foreign currency to a subscriber's own country's currency A7, A63, remitting payment, making money transfer, and delivering a written notice and public notice. The money service apparatus for an IMT-2000 network includes a money service apparatus wherein the identification numbers of a terminal connected with the IMT-2000 network and a card are recognized and are provided to the subscriber, wherein a money exchange information service is provided; wherein the current location of the subscriber is searched when the subscriber requests the information on the amount of money that is converted to the local country's currency where he is located, applying the money exchange rate to his own country's currency, and then the information is provided to the terminal; wherein in the case that the subscriber requests a cash transfer to the called subscriber side, the money exchange information is searched through the money exchange information service, and the cash is provided to the called subscriber, and wherein in the case that the subscriber requests a cash transfer to the bank, the money exchange rate information is searched through the money exchange information service, and the money transfer is performed to the bank. A SMS message can be provided to verify transaction (Fig 3B).

公开(公告)号：DE4444776C2

公开(公告)日：2001-08-16

申请号：DE4444776

申请日：1994-12-15

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMM AUTHORITY SEOUL

Inventor： RYUM BYUNG-RYUL ,  HAN TAE-HYEON ,  LEE SOO-MIN ,  CHO DEOK-HO ,  LEE SEONG-HEARN ,  KANG JIN-YOUNG

IPC: H01L21/331 ,  H01L29/732 ,  H01L29/737

Abstract: Disclosed is a fabrication of a bipolar transistor with a super self-aligned vertical structure in which emitter, base and collector are vertically self-aligned, the fabrication method comprising the steps of forming a conductive buried collector region in a silicon substrate by using ion-implantation of an impurity and thermal-annealing; sequentially forming several layers; selectively removing the nitride and polysilicon layers to form a pattern; sequentially forming a silicon oxide layer, a third layer and a silicon oxide layer thereon; forming a patterned photoresist layer thereon to define active and inactive regions and removing several layers on the active region to form an opening; forming a side wall on both sides of the opening; forming a collector on a surface portion of the buried collector region up to a lower surface of the polysilicon layer; removing the side wall and the third nitride layer to expose a side surface of the second polysilicon layer; selectively forming a base on an upper surface of the collector including a side surface of the polysilicon layer; forming side wall oxide layer on both sides of the base and the silicon oxide to define an emitter region; forming an emitter on the base; and forming electrodes thereon. In the method, an active region is defined by a photolithography, and thereby a trench isolation acting as factors of lowering in integration and device-performance can be omitted in the method. As a result, fabrication sequence can be simplified and integration can be improved.

公开(公告)号：FR2769388B1

公开(公告)日：2001-08-03

申请号：FR9712488

申请日：1997-10-07

Applicant: KOREA TELECOMM AUTHORITY

Inventor： HAN IL SONG ,  CHOI YOUNG JAE ,  KIM DAE HWAN

IPC: G06G7/164 ,  G06N3/063 ,  G06F15/80 ,  G06G7/60

公开(公告)号：CA2288372A1

公开(公告)日：2001-05-02

申请号：CA2288372

申请日：1999-11-02

Applicant: KOREA TELECOMM AUTHORITY

Inventor： JEONG SOO KIL ,  PARK HO SUK ,  JEON HONG BEOM ,  JEON HYO SEOP ,  KIM JEONG TAE

IPC: H04L12/24 ,  H04M3/22 ,  H04M3/30 ,  H04M15/00 ,  H04Q3/00 ,  H04B15/00 ,  H04L12/26

Abstract: The present invention relates to a communication network disturbance management method using a top-down method which detects, analyzes and solves a problem by analyzing a quality state in regard to whole communication network lines. The disturbance management are performed in the whole communication network, thereby managing the communication network problems which are not notified by the users. In addition, the communication network problems can be managed before from the user's dissatisfaction notification or disturbance generation. Moreover, the disturbance management access method is based on service quali ty values, and thus it is possible to manage the communication network problem causing reduction of the service quality provided to the users. As a result, the present invention ca n provide the high quality communication service to the users using the communication network.

公开(公告)号：GB2313730B

公开(公告)日：2001-01-17

申请号：GB9710899

申请日：1997-05-27

Applicant: KOREA TELECOMM AUTHORITY

Inventor： KIM SUNG RYONG ,  KIM YOUNG MAN ,  BAIK SONG HOON ,  KIM HYO SIL ,  JEONG JAE WOO

IPC: G06K19/00 ,  G09B29/00 ,  G09B29/10 ,  H04N1/00 ,  G06T1/00 ,  H04N5/00

Abstract: Line components of raster data obtained by scanning an original map are digitized to thereby provide vector data for an electronic map. To automatically verify the accuracy of this vector data it is transformed into raster data using a desired algorithm, such as the Bresenham algorithm, and then the edges of the line components are transformed into sawtooth-shaped edges. This saw-tooth-shaped raster data (upper right, fig 4) is then XORed with the original raster data (upper left, fig 4). The remaining noise is then removed using a filter having a desired size eg of 2x2 pixels, thereby enabling the accuracy of the electronic map to be verified.

公开(公告)号：BE1005270A5

公开(公告)日：1993-06-15

申请号：BE9200637

申请日：1992-07-08

Applicant: KOREA TELECOMM AUTHORITY

Inventor： IL SONG HAN

IPC: G06G7/163 ,  G06N3/063 ,  H03F3/16

Abstract: Dispositif MOSFET de contrôle de multiplicateur destiné à réaliser le fonctionnement précis des opérations de multiplication en réglant la tension d'offset de MOSFET en vue d'extraire la composante non linéaire du courant MOSFET en recournt à des sources de tension symétriques et à un circuit-miroir de courant est divulgué. Le dispositif MOSFET de contrôle de multiplicateur recourt à un moyen linéaire MOSFET pour varier de façon linéaire le courant de sortie 1 appliqué A en fonction d'une tension d'entrée provenant d'une source de tension d'entrée Vg et d'une tension d'entrée symétriqueprovenant de sources de tension Vx et -Vx. La tension d'entrée provenant de la source de tension d'entrée Vg est opérativement associé aux tensions symétriques d'entrée provenant des sources de tension Vx et -Vx. Un élément d'impédance Z génère une tension Vo, l'élément d'impédance Z étant relié au noeud A du moyen linéaire MOSFET et à la masse.

公开(公告)号：BE1005226A5

公开(公告)日：1993-06-01

申请号：BE9200636

申请日：1992-07-08

Applicant: KOREA TELECOMM AUTHORITY

Inventor： IL SONG HAN

IPC: G06G7/163 ,  G06N3/063 ,  H03F3/16

Abstract: Un multiplicateur analogique MOSFET avec un moyen linéaire résistif MOSFET variable destiné à faire varier linéairement un courant de sortie I en fonction de tensions d'entrée symétriques provenant de sources de tension V2 et -v2 et d'une tension d'entrée provenant d'une source de tension d'entrée V1 associé opérativement aux tensions d'entrée symétriques provenant des sources de tension V2 et -V2, le moyen linéaire MOSFET variable possédant un noeud A destiné à émettre le courant de sortie I modifiée est divulgué. Une unité d'amplification opérationnelle destiné à amplifier le courant de sortie 1 modifié linéairement et qui compend un amplificateur opérationnel U dont la borne d'entrée d'inversion est reliée au noeud A du moyen linéaire MOSFET, la borne d'entrée sans inversion étant reliée à la masse et présentant une borne de sortie. L'unité d'amplication opérationnelle comprend en outre un élément de rétroaction Z relié entre la borne d'entrée d'inversion et la borne de sortie de l'amplificateur opérationnel U, la borne de sortie générant en fonctionnement une tension Vo.

公开(公告)号：SE515267C2

公开(公告)日：2001-07-09

申请号：SE9201882

申请日：1992-06-18

Applicant: KOREA TELECOMM AUTHORITY

Inventor： HAN I S

IPC: G06G7/163 ,  G06N3/063 ,  H03F3/16 ,  G06G7/16

Abstract: A MOSFET analog multiplier with a variable resistive MOSFET linear means for linearly varying output current I depending upon a symmetrical input voltage from voltage sources V2 and -V2 and an input voltage from an input voltage source V1 operatively associated with the symmetrical input voltage from the voltage source V2 and -V2, with the variable resistive MOSFET linear means having a node A to output the varied output current I therethrough is disclosed. An operational amplifying unit for amplifying the linearly varied output current I and which includes an operational amplifier U with an inverting input terminal connected to the node A of the MOSFET linear means, a non-inverting input terminal connected to ground, and an output terminal. The operational amplifying unit further includes a feedback element Z connected between the inverting input terminal and the output terminal of the operational amplifier U, where in use the output terminal outputs a voltage Vo.