公开(公告)号：WO2005033357A2

公开(公告)日：2005-04-14

申请号：PCT/US2004/028894

申请日：2004-09-07

Applicant: TOKYO ELECTRON LIMITED ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  YAMASAKI, Hideaki ,  MATSUDA, Tsukasa ,  GOMI, Atsushi ,  HATANO, Tatsuo ,  SUGIURA, Masahito ,  KAWANO, Yumiko ,  LEUSINK, Gert, J. ,  MCFEELY, Fenton, R. ,  MALHOTRA, Sandra, G.

Inventor： YAMASAKI, Hideaki ,  MATSUDA, Tsukasa ,  GOMI, Atsushi ,  HATANO, Tatsuo ,  SUGIURA, Masahito ,  KAWANO, Yumiko ,  LEUSINK, Gert, J. ,  MCFEELY, Fenton, R. ,  MALHOTRA, Sandra, G.

IPC: C23C16/16

CPC classification number: C23C16/16 ,  H01L21/28556

Abstract: A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO) 6 , Ni(CO) 4 , Mo(CO) 6 , Co 2 (CO) 8 , Rh 4 (CO) 12 , Re 2 (CO) 10 , Cr(CO) 6 , and Ru 3 (CO) 12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500 0 C, by utilizing a residence time less than about 120 msec.

Abstract translation: 通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法包括：将包含羰基金属前驱体的工艺气体引入处理室中并且在衬底上沉积金属层。 TCVD工艺利用在衬底上方的处理区中的气态物质的短停留时间来形成低电阻率金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） （CO）8，Rh 4（CO）12，以及它们的组合。 Re（CO）10，Cr（CO）6和Ru 3（CO） 12前体。 在本发明的另一实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻率W层的方法。

公开(公告)号：WO2007111779A8

公开(公告)日：2008-03-13

申请号：PCT/US2007003212

申请日：2007-02-05

Applicant: TOKYO ELECTRON LTD ,  ISHIZAKA TADAHIRO ,  MATSUDA TSUKASA ,  HARA MASAMICHI ,  FAGUET JACQUES ,  MIZUSAWA YASUSHI

Inventor： ISHIZAKA TADAHIRO ,  MATSUDA TSUKASA ,  HARA MASAMICHI ,  FAGUET JACQUES ,  MIZUSAWA YASUSHI

IPC: H01L21/00 ,  H01L21/44

CPC classification number: C23C16/45542 ,  C23C16/32 ,  C23C16/36 ,  C23C16/509 ,  C23C16/56

Abstract: A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.

Abstract translation: 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，该系统被配置为执行PEALD处理，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

公开(公告)号：WO2007111779A3

公开(公告)日：2007-12-06

申请号：PCT/US2007003212

申请日：2007-02-05

Applicant: TOKYO ELECTRON LTD ,  ISHIZAKA TADAHIRO ,  MATSUDA TSUKASA ,  HARA MASAMICHI ,  FAGUET JACQUES ,  MIZUSAWA YASUSHI

Inventor： ISHIZAKA TADAHIRO ,  MATSUDA TSUKASA ,  HARA MASAMICHI ,  FAGUET JACQUES ,  MIZUSAWA YASUSHI

IPC: H01L21/00 ,  H01L21/44

CPC classification number: C23C16/45542 ,  C23C16/32 ,  C23C16/36 ,  C23C16/509 ,  C23C16/56

Abstract: A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.

Abstract translation: 一种形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将衬底布置在等离子体增强的原子层沉积（PEALD）系统的处理室中，该等离子体增强的原子层沉积（PEALD）系统被配置为执行PEALD工艺，使用PEALD工艺在衬底上沉积TaC或TaCN膜，并且修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以至少从沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜提供比沉积的TaCN膜更强的对金属膜的粘附。 根据一个实施例，由TAIMATA和等离子体激发氢的交替曝光来沉积TaCN膜。

公开(公告)号：WO2006101856A3

公开(公告)日：2007-04-26

申请号：PCT/US2006009188

申请日：2006-03-15

Applicant: TOKYO ELECTRON LTD ,  MATSUDA TSUKASA

Inventor： MATSUDA TSUKASA

IPC: H01L21/461 ,  C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/4554 ,  C23C16/515 ,  H01J37/32009 ,  H01J37/32532 ,  H01L21/28562

Abstract: A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Also included is coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate. A reactive gas is introduced within the process chamber, the reactive gas chemically reacting with contaminants in the process chamber to release the contaminants from at least one of a process chamber component or the substrate.

Abstract translation: 使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底布置在处理室中，该处理室被配置为便于PEALD工艺，在处理室内引入第一工艺材料并引入第二工艺材料 在处理室内。 还包括在引入第二工艺材料期间将电磁功率耦合到处理室，以便产生促进第一和第二工艺材料在衬底表面处的还原反应的等离子体。 反应性气体被引入处理室内，反应气体与处理室中的污染物质化学反应以从处理室组件或衬底中的至少一个释放污染物。

公开(公告)号：WO2006104921A2

公开(公告)日：2006-10-05

申请号：PCT/US2006010870

申请日：2006-03-24

Applicant: TOKYO ELECTRON LTD ,  FAGUET JACQUES ,  CERIO FRANK M JR ,  MATSUDA TSUKASA ,  YAMAMOTO KAORU

Inventor： FAGUET JACQUES ,  CERIO FRANK M JR ,  MATSUDA TSUKASA ,  YAMAMOTO KAORU

IPC: H05H1/24 ,  C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45542 ,  C23C16/5096 ,  H01J37/32477

Abstract: A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.

Abstract translation: 等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。 第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应， 在基板上形成预定的膜。 还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的 膜沉积在基底上。

公开(公告)号：WO2006104647A2

公开(公告)日：2006-10-05

申请号：PCT/US2006/008112

申请日：2006-03-07

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  MATSUDA, Tsukasa

Inventor： MATSUDA, Tsukasa

IPC: C23C16/455

CPC classification number: C23C16/18 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76868 ,  H01L21/76873

Abstract: A method and system (1 ) for forming a variable thickness seed layer (102, 116) on a substrate (25, 100, 110) for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate (25, 100, 110) in a process chamber (10) containing a showerhead (30), with the center (106, 122) of the substrate (25, 100, 110) generally aligned with an inner gas delivery zone (32) of the showerhead (30) and the edge (104, 120) of the substrate (25, 100, 110) generally aligned with an outer gas delivery zone (34) of the showerhead (30). The method further includes depositing a seed layer (102, 116) on the substrate (25, 100, 110) by exposing the substrate (25, 100, 110) to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone (32), and exposing the substrate (25, 100, 110) to a second gas flowed through the outer gas delivery zone (34), whereby the seed layer (102, 116) is deposited with a thickness at the edge (104, 120) of the substrate (25, 100, 110) that is less than the thickness at the center (106, 122) of the substrate (25, 100, 110).

Abstract translation: 一种用于在随后的金属电化学电镀工艺的衬底（25,100,110）上形成可变厚度晶种层（102,116）的方法和系统（1），其中晶种层厚度分布改善了电镀金属层的均匀性 与使用恒定厚度种子层相比。 该方法包括在包含喷头（30）的处理室（10）中提供衬底（25,100,110），其中衬底（25,100,110）的中心（106,122）与内部 喷头（30）的气体输送区域（32）和基底（25,100,110）的边缘（104,120）大致与喷头（30）的外部气体输送区域（34）对齐。 该方法还包括通过将衬底（25,100,110）暴露于包含含有金属的前体的第一气体而将基底层（102,116）沉积在衬底（25,100,110）上，该第一气体流过内部气体输送 区域（32），并且将衬底（25,100,110）暴露于流过外部气体输送区域（34）的第二气体，由此种子层（102,116）在边缘（104）处沉积厚度 ，基底（25,100,110）的厚度小于衬底（25,100,110）的中心（106,122）处的厚度。

公开(公告)号：WO2005034223A1

公开(公告)日：2005-04-14

申请号：PCT/US2004/028892

申请日：2004-09-07

Applicant: TOKYO ELECTRON LIMITED ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  YAMASAKI, Hideaki ,  MATSUDA, Tsukasa ,  GOMI, Atsushi ,  HATANO, Tatsuo ,  SUGIURA, Masahito ,  KAWANO, Yumiko ,  LEUSINK, Gert, J. ,  MCFEELY, Fenton, R. ,  MALHOTRA, Sandra, G.

Inventor： YAMASAKI, Hideaki ,  MATSUDA, Tsukasa ,  GOMI, Atsushi ,  HATANO, Tatsuo ,  SUGIURA, Masahito ,  KAWANO, Yumiko ,  LEUSINK, Gert, J. ,  MCFEELY, Fenton, R. ,  MALHOTRA, Sandra, G.

IPC: H01L21/285

CPC classification number: H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76841

Abstract: A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO) 6 , Ni(CO) 4 , MO(CO) 6 , C0 2 (CO) 8 , Rh 4 (CO) 12 , Re2(CO) 10 , Cr(CO) 6 , and Ru 3 (CO) 12 . In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410 0 C and a chamber pressure of about 200 mTorr.

Abstract translation: 一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，MO（CO）6，CO 2（CO）8，Rh 4（CO）12， Re 2（CO）10，Cr（CO）6和Ru 3（CO）12）。 在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的衬底温度和约200mTorr的室压下从包含W（CO）6前体的工艺气体中沉积W层。

公开(公告)号：WO2007111779A2

公开(公告)日：2007-10-04

申请号：PCT/US2007/003212

申请日：2007-02-05

Applicant: TOKYO ELECTRON LIMITED ,  ISHIZAKA, Tadahiro ,  MATSUDA, Tsukasa ,  HARA, Masamichi ,  FAGUET, Jacques ,  MIZUSAWA, Yasushi

Inventor： ISHIZAKA, Tadahiro ,  MATSUDA, Tsukasa ,  HARA, Masamichi ,  FAGUET, Jacques ,  MIZUSAWA, Yasushi

IPC: C23C16/00 ,  H05H1/00

CPC classification number: C23C16/45542 ,  C23C16/32 ,  C23C16/36 ,  C23C16/509 ,  C23C16/56

Abstract: A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.

Abstract translation: 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

公开(公告)号：WO2006104921A3

公开(公告)日：2006-10-05

申请号：PCT/US2006/010870

申请日：2006-03-24

Applicant: TOKYO ELECTRON LIMITED ,  FAGUET, Jacques ,  CERIO, Frank, M., Jr. ,  MATSUDA, Tsukasa ,  YAMAMOTO, Kaoru

Inventor： FAGUET, Jacques ,  CERIO, Frank, M., Jr. ,  MATSUDA, Tsukasa ,  YAMAMOTO, Kaoru

IPC: H01L21/00 ,  H01L21/31 ,  H01L21/322

Abstract: A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.

公开(公告)号：WO2005103323A1

公开(公告)日：2005-11-03

申请号：PCT/US2005/003669

申请日：2005-02-08

Applicant: TOKYO ELECTRON LIMITED ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IKEDA, Taro ,  MATSUDA, Tsukasa ,  MCFEELY, Fenton, R. ,  MALHOTRA, Sandra, G. ,  SIMON, Andrew, H. ,  YURKAS, John, J.

Inventor： IKEDA, Taro ,  MATSUDA, Tsukasa ,  MCFEELY, Fenton, R. ,  MALHOTRA, Sandra, G. ,  SIMON, Andrew, H. ,  YURKAS, John, J.

IPC: C23C16/02

CPC classification number: C23C16/5096 ,  C23C16/02 ,  C23C16/16

Abstract: A method and a processing tool are provided for forming a metal layer with improved morphology on a substrate. The method includes pre-treating the substrate by exposing the substrate to excited species in a plasma, exposing the pre-treated substrate to a process gas containing a metal-carbonyl precursor, and forming a metal. layer on the pre-treated substrate surface by a chemical vapor deposition process. The metal-carbonyl precursor can contain W(CO) 6 , Ni(CO) 4 , Mo(CO) 6 , Co 2 (CO) 8 , Rh 4 (CO) 12 , Re 2 (CO) 10 , Cr(CO) 6 , or Ru 3 (CO) 12 or any combination thereof, and the metal layer can contain W, Ni, Mo, Co, Rh, Re, Cr, or Ru, or any combination thereof, respectively.

Abstract translation: 提供了一种用于在基板上形成具有改善的形态的金属层的方法和加工工具。 该方法包括通过将衬底暴露于等离子体中的激发物质来预处理衬底，将预处理的衬底暴露于含有羰基金属前体的工艺气体，并形成金属。 层通过化学气相沉积工艺在预处理的基材表面上。 金属羰基前体可以含有W（CO）6，Ni（CO）4，Mo（CO）6，Co2（CO）8，Rh4（CO）12，Re2（CO）10，Cr（CO） Ru 3（CO）12或其任何组合，并且金属层可以分别含有W，Ni，Mo，Co，Rh，Re，Cr或Ru，或其任何组合。