BUILT-IN SELF TEST FOR A THERMAL PROCESSING SYSTEM
    13.
    发明申请
    BUILT-IN SELF TEST FOR A THERMAL PROCESSING SYSTEM 审中-公开
    用于热处理系统的内置自检

    公开(公告)号:WO2007030193A1

    公开(公告)日:2007-03-15

    申请号:PCT/US2006/026128

    申请日:2006-07-06

    Abstract: A method of creating and/or modifying a built-in self test (BIST) table for monitoring a thermal processing system (100, 200) in real-time that includes positioning a plurality of wafers (W) in a processing chamber (202) in the thermal processing system (100, 200); executing a real-time dynamic model (330) to generate a predicted dynamic process response; creating a measured dynamic process response; determining a dynamic estimation error; determining if the determined dynamic estimation error can be associated with a pre-existing BIST rule in the BIST table; creating a new BIST rule when the dynamic estimation error cannot be associated with any pre-existing BIST rule in the BIST table; and stopping the process when a new BIST rule cannot be created.

    Abstract translation: 一种创建和/或修改内置自检(BIST)表的方法,用于实时监控热处理系统(100,200),包括将多个晶片(W)定位在处理室(202)中, 在热处理系统(100,200)中; 执行实时动态模型(330)以产生预测的动态过程响应; 创建一个测量的动态过程响应; 确定动态估计误差; 确定所确定的动态估计误差是否可以与BIST表中的预先存在的BIST规则相关联; 当动态估计错误不能与BIST表中的任何预先存在的BIST规则相关联时,创建新的BIST规则; 并在无法创建新的BIST规则时停止该进程。

    WAFER CURVATURE ESTIMATION, MONITORING, AND COMPENSATION
    15.
    发明申请
    WAFER CURVATURE ESTIMATION, MONITORING, AND COMPENSATION 审中-公开
    波形曲线估计,监测和补偿

    公开(公告)号:WO2006107523A1

    公开(公告)日:2006-10-12

    申请号:PCT/US2006/009019

    申请日:2006-03-13

    CPC classification number: H01L21/67248 H01L21/67288 H01L22/12

    Abstract: A method (2100) of determining wafer curvature in real-time is presented; The method (2100) includes establishing a first temperature profile for a hotplate (58, 620) surface, where the hotplate (58, 620) surface is divided into a plurality of temperature control zones. The method (2100) further includes positioning a wafer (14, 690) at a first height above the hotplate (58, 620) surface and determining a second temperature profile for the hotplate (58, 620) surface. The wafer curvature is then determined by using the second temperature profile. Also, a dynamic model (904) of a processing system (900) is presented and wafer curvature can be incorporated into the dynamic model (904).

    Abstract translation: 提出了一种实时确定晶片曲率的方法(2100)。 方法(2100)包括建立用于加热板(58,620)表面的第一温度分布,其中加热板(58,620)表面被分成多个温度控制区。 方法(2100)还包括将晶片(14,690)定位在加热板(58,620)表面上方的第一高度处,并确定用于加热板(58,620)表面的第二温度曲线。 然后通过使用第二温度分布来确定晶片曲率。 此外,呈现处理系统(900)的动态模型(904),并且可以将晶片曲率并入到动态模型(904)中。

    ADAPTIVE REAL TIME CONTROL OF A RETICLE/MASK SYSTEM
    16.
    发明申请
    ADAPTIVE REAL TIME CONTROL OF A RETICLE/MASK SYSTEM 审中-公开
    自适应/掩蔽系统的自适应实时控制

    公开(公告)号:WO2005076075A2

    公开(公告)日:2005-08-18

    申请号:PCT/US2005/002064

    申请日:2005-01-19

    IPC: G03F

    CPC classification number: G03F1/68 G03F1/78 H01L21/67248

    Abstract: An adaptive real time thermal processing system is presented that includes a multivariable controller (260). Generally, the method (1600) includes creating a dynamic model of the thermal processing system (1630); incorporating reticle/mask curvature in the dynamic model; coupling a diffusion-amplification model into the dynamic thermal model; creating a multivariable controller; parameterizing the nominal setpoints into a vector of intelligent setpoints (1650); creating a process sensitivity matrix; creating intelligent setpoints using an efficient optimization method and process data; and establishing recipes that select appropriate models and setpoints during run-time.

    Abstract translation: 提出了一种包括多变量控制器(260)的自适应实时热处理系统。 通常,方法(1600)包括创建热处理系统(1630)的动态模型; 在动态模型中结合掩模/掩模曲率; 将扩散扩增模型耦合到动态热模型中; 创建一个多变量控制器; 将标称设定值参数化为智能设定值的向量(1650); 创建一个过程敏感性矩阵; 使用有效的优化方法和过程数据创建智能设定点; 并建立在运行期间选择合适的模型和设定值的配方。

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