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    MONITORING A SYSTEM DURING LOW-PRESSURE PROCESSES
    2.
    发明申请
    MONITORING A SYSTEM DURING LOW-PRESSURE PROCESSES 审中-公开
    在低压过程中监测系统

    公开(公告)号：WO2007115084A1

    公开(公告)日：2007-10-11

    申请号：PCT/US2007/065483

    申请日：2007-03-29

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji

    Inventor： KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji

    IPC: G05B19/418 ,  G05B23/02

    CPC classification number: G05B19/41875 ,  C23C16/52 ,  G05B23/0254 ,  G05B2219/37514 ,  G05B2219/37533 ,  G05B2219/45031 ,  Y02P90/22 ,  Y02P90/26

    Abstract: A method of monitoring a processing system (100, 200, 300) in real-time using low-pressure based modeling techniques that include processing one or more of wafers (W) in a processing chamber (50, 104, 202); determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.

    Abstract translation: 一种监视处理系统（100,200,300）的方法，用于实时使用基于低压的建模技术，其包括处理处理室（50,104,202）中的一个或多个晶片（W）; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

    BUILT-IN SELF TEST FOR A THERMAL PROCESSING SYSTEM
    3.
    发明申请
    BUILT-IN SELF TEST FOR A THERMAL PROCESSING SYSTEM 审中-公开
    用于热处理系统的内置自检

    公开(公告)号：WO2007030194A1

    公开(公告)日：2007-03-15

    申请号：PCT/US2006/026220

    申请日：2006-07-06

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji ,  DIP, Anthony ,  SMITH, David ,  JOE, Raymond ,  GANDHI, Sundar

    Inventor： KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji ,  DIP, Anthony ,  SMITH, David ,  JOE, Raymond ,  GANDHI, Sundar

    CPC classification number: H01L22/10 ,  G05B23/0254 ,  H01L21/67248

    Abstract: A method of monitoring a thermal processing system (100, 200) in real-time using a built-in self test (BIST) table that includes positioning a plurality of wafers (W) in a processing chamber (202) in the thermal processing system (100, 200); executing a real-time dynamic model (330) to generate a predicted dynamic process response for the processing chamber (202) during the processing time; creating a first measured dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the measured dynamic process response; and comparing the dynamic estimation error to operational thresholds established by one or more rules in the BiST table.

    Abstract translation: 一种使用内置自检（BIST）表实时监测热处理系统（100,200）的方法，其包括将多个晶片（W）定位在热处理系统中的处理室（202）中 （100,200）; 执行实时动态模型（330）以在处理时间期间生成用于处理室（202）的预测动态过程响应; 创建第一个测量动态过程响应; 使用预测的动态过程响应和测量的动态过程响应之间的差来确定动态估计误差; 并将动态估计误差与由BiST表中的一个或多个规则建立的操作阈值进行比较。

    MONITORING A SINGLE-WAFER PROCESSING SYSTEM
    8.
    发明申请
    MONITORING A SINGLE-WAFER PROCESSING SYSTEM 审中-公开
    监测单波加工系统

    公开(公告)号：WO2007115080A1

    公开(公告)日：2007-10-11

    申请号：PCT/US2007/065473

    申请日：2007-03-29

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji

    Inventor： KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji

    IPC: G05B19/418 ,  G05B23/02

    CPC classification number: G05B19/41875 ,  C23C16/52 ,  G05B23/0254 ,  G05B2219/37514 ,  G05B2219/37533 ,  G05B2219/45031 ,  Y02P90/22 ,  Y02P90/26

    Abstract: A method of monitoring a single-wafer processing system (100, 200, 300) in real-time using low-pressure based modeling techniques that include processing a wafer (W) in a processing chamber (50, 104, 202); determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.

    Abstract translation: 一种使用包括处理处理室（50,104,202）中的晶片（W）的基于低压的建模技术来实时监测单晶片处理系统（100,200,300）的方法; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

    ADAPTIVE REAL TIME CONTROL OF A RETICLE/MASK SYSTEM
    9.
    发明申请
    ADAPTIVE REAL TIME CONTROL OF A RETICLE/MASK SYSTEM 审中-公开
    自适应/掩蔽系统的自适应实时控制

    公开(公告)号：WO2005076075A3

    公开(公告)日：2006-04-27

    申请号：PCT/US2005002064

    申请日：2005-01-19

    Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  KAUSHAL SANJEEV ,  PANDEY PRADEEP ,  SUGASHIMA KENJI

    Inventor： KAUSHAL SANJEEV ,  PANDEY PRADEEP ,  SUGASHIMA KENJI

    IPC: G03F1/00 ,  F23N1/00 ,  G03F20060101 ,  G03F1/14 ,  G03F7/20

    CPC classification number: G03F1/68 ,  G03F1/78 ,  H01L21/67248

    Abstract: An adaptive real time thermal processing system is presented that includes a multivariable controller (260). Generally, the method (1600) includes creating a dynamic model of the thermal processing system (1630); incorporating reticle/mask curvature in the dynamic model; coupling a diffusion-amplification model into the dynamic thermal model; creating a multivariable controller; parameterizing the nominal setpoints into a vector of intelligent setpoints (1650); creating a process sensitivity matrix; creating intelligent setpoints using an efficient optimization method and process data; and establishing recipes that select appropriate models and setpoints during run-time.

    Abstract translation: 提出了一种包括多变量控制器（260）的自适应实时热处理系统。 通常，方法（1600）包括创建热处理系统（1630）的动态模型; 在动态模型中结合掩模/掩模曲率; 将扩散扩增模型耦合到动态热模型中; 创建一个多变量控制器; 将标称设定值参数化为智能设定值的向量（1650）; 创建一个过程敏感性矩阵; 使用有效的优化方法和过程数据创建智能设定点; 并建立在运行期间选择合适的模型和设定值的配方。

    METHODS FOR ADAPTIVE REAL TIME CONTROL OF A THERMAL PROCESSING SYSTEM
    10.
    发明申请
    METHODS FOR ADAPTIVE REAL TIME CONTROL OF A THERMAL PROCESSING SYSTEM 审中-公开
    热处理系统的自适应实时控制方法

    公开(公告)号：WO2005067006A1

    公开(公告)日：2005-07-21

    申请号：PCT/US2004/041111

    申请日：2004-12-08

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  SUGISHIMA, Kenji ,  PANDEY, Pradeep

    Inventor： KAUSHAL, Sanjeev ,  SUGISHIMA, Kenji ,  PANDEY, Pradeep

    IPC: H01L21/00

    CPC classification number: H01L21/67248

    Abstract: Methods for adaptive real time control of a system for thermal processing substrates, such as semiconductor wafers and display panels. Generally, the method includes creating a dynamic model (904) of the thermal processing system (900), incorporating wafer bow in the dynamic model (904), coupling a diffusion-­amplification model into the dynamic thermal model (904), creating a multivariable controller (922), parameterizing the nominal setpoints, creating a process sensitivity matrix, creating intelligent setpoints using an efficient optimization method and process data, and establishing recipes that select appropriate models and setpoints during run­time.

    Abstract translation: 用于热处理衬底（例如半导体晶片和显示面板）的系统的自适应实时控制的方法。 通常，该方法包括创建热处理系统（900）的动态模型（904），其中将动态模型（904）中的晶片弓结合，将扩散扩增模型耦合到动态热模型（904）中，创建多变量 控制器（922），参数化标称设定值，创建过程灵敏度矩阵，使用有效的优化方法和过程数据创建智能设定值，以及建立在运行时期间选择合适的模型和设定值的配方。

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