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    SURFACE TREATED ALUMINUM NITRIDE BAFFLE
    11.
    发明申请
    SURFACE TREATED ALUMINUM NITRIDE BAFFLE 审中-公开
    表面处理的氮化铝BA

    公开(公告)号：WO2010022212A2

    公开(公告)日：2010-02-25

    申请号：PCT/US2009/054416

    申请日：2009-08-20

    Applicant: APPLIED MATERIALS, INC. ,  RASHEED, Muhammad, M. ,  LUBOMIRSKY, Dmitry

    Inventor： RASHEED, Muhammad, M. ,  LUBOMIRSKY, Dmitry

    IPC: H01L21/205 ,  H01L21/00

    CPC classification number: C23C16/45591 ,  C04B35/581 ,  C04B40/0092 ,  C23C16/4404 ,  C23C16/45563 ,  C23C16/45565 ,  H01J37/32449 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/28556

    Abstract: Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.

    Abstract translation: 本文提供了涉及氮化铝挡板的方法和设备。 在一些实施例中，用于半导体处理室中的挡板可包括包含氮化铝和金属氧化物粘合剂的主体，其中主体表面上的氮化铝与金属氧化物的比率大于或等于 身体。 在一些实施例中，主体可以具有中心杆和外环，该中心杆和外环联接到中心杆的下部并且从中心杆的下部径向向外延伸。 在一些实施例中，制造挡板的方法可包括烧结铝，氮和金属氧化物粘合剂以形成挡板的主体，所述主体具有布置在其表面上的过量金属氧化物粘合剂; 并从体表除去大量过量的金属氧化物粘合剂。

    GAS DISTRIBUTION SYSTEM FOR IMPROVED TRANSIENT VAPOR PHASE DEPOSITION
    16.
    发明申请
    GAS DISTRIBUTION SYSTEM FOR IMPROVED TRANSIENT VAPOR PHASE DEPOSITION 审中-公开
    用于改进的瞬态蒸气相沉积的气体分配系统

    公开(公告)号：WO2006058240A1

    公开(公告)日：2006-06-01

    申请号：PCT/US2005/042790

    申请日：2005-11-22

    Applicant: APPLIED MATERIALS, INC. ,  GONDHALEKAR, Sudhir ,  DUNCAN, Robert ,  SALIMIAN, Siamak ,  RASHEED, Muhammad, M. ,  WHITESELL, Harry, Smith ,  GEOFFRION, Bruno ,  KRISHNARAJ, Padmanabhan ,  GUJER, Rudolf

    Inventor： GONDHALEKAR, Sudhir ,  DUNCAN, Robert ,  SALIMIAN, Siamak ,  RASHEED, Muhammad, M. ,  WHITESELL, Harry, Smith ,  GEOFFRION, Bruno ,  KRISHNARAJ, Padmanabhan ,  GUJER, Rudolf

    IPC: C23C16/00 ,  H01L21/00

    CPC classification number: C23C16/4558

    Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

    Abstract translation: 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。

    PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE
    18.
    发明申请
    PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE 审中-公开
    带有保护背板的PVD溅射目标

    公开(公告)号：WO2012109069A2

    公开(公告)日：2012-08-16

    申请号：PCT/US2012/023474

    申请日：2012-02-01

    Applicant: APPLIED MATERIALS, INC. ,  RASHEED, Muhammad M. ,  WANG, Rongjun

    Inventor： RASHEED, Muhammad M. ,  WANG, Rongjun

    IPC: C23C14/34 ,  C23C14/50

    CPC classification number: C23C14/3407 ,  C22C9/00 ,  C22C9/04 ,  C22C19/03 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3435

    Abstract: Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer - usually containing a nickel material - covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.

    Abstract translation: 本发明的实施例提供了用于物理气相沉积（PVD）的溅射靶和形成这种溅射靶的方法。 在一个实施例中，溅射靶包含设置在背板上的目标层和通常包含镍材料的保护涂层 - 覆盖并保护背衬板的区域，否则在PVD工艺期间将暴露于等离子体。 在许多实施例中，靶层含有镍 - 铂合金，背板含有铜合金（例如铜 - 锌），保护涂层含有金属镍。 保护涂层消除了形成高度导电的铜污染物，通常由包含在背板的暴露表面内的铜合金的等离子体侵蚀导致。 因此，在PVD工艺期间，PVD室的基板和内表面保持没有这种铜污染物。

    LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING
    19.
    发明申请
    LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING 审中-公开
    具有增强离子化和射频功率耦合的低电阻TUNGSTEN PVD

    公开(公告)号：WO2011156650A3

    公开(公告)日：2012-04-19

    申请号：PCT/US2011039867

    申请日：2011-06-09

    Applicant: APPLIED MATERIALS INC ,  CAO YONG ,  TANG XIANMIN ,  GANDIKOTA SRINIVAS ,  WANG WEI D ,  LIU ZHENDONG ,  MORAES KEVIN ,  RASHEED MUHAMMAD M ,  NGUYEN THANH X ,  JUPUDI ANANTHKRISHNA

    Inventor： CAO YONG ,  TANG XIANMIN ,  GANDIKOTA SRINIVAS ,  WANG WEI D ,  LIU ZHENDONG ,  MORAES KEVIN ,  RASHEED MUHAMMAD M ,  NGUYEN THANH X ,  JUPUDI ANANTHKRISHNA

    IPC: H01L29/78 ,  H01L21/336 ,  H01L29/43

    CPC classification number: H01L21/28079 ,  C23C14/165 ,  C23C14/345 ,  C23C14/35 ,  H01L21/28088 ,  H01L21/2855 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

    Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

    Abstract translation: 本文描述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 栅极电极堆叠包括在栅极电介质层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION
    20.
    发明申请
    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
    用于射频物理气相沉积的工艺成套工具

    公开(公告)号：WO2011019566A3

    公开(公告)日：2011-07-07

    申请号：PCT/US2010044420

    申请日：2010-08-04

    Applicant: APPLIED MATERIALS INC ,  HAWRYLCHAK LARA ,  SAVANDAIAH KIRANKUMAR ,  RASHEED MUHAMMAD M ,  WANG RONGJUN ,  ALLEN ADOLPH MILLER ,  XIE ZHIGANG

    Inventor： HAWRYLCHAK LARA ,  SAVANDAIAH KIRANKUMAR ,  RASHEED MUHAMMAD M ,  WANG RONGJUN ,  ALLEN ADOLPH MILLER ,  XIE ZHIGANG

    IPC: H01L21/203 ,  C23C14/34

    CPC classification number: H01L21/67017 ,  C23C14/34 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3447

    Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

    Abstract translation: 本发明的实施例一般涉及用于半导体处理室的处理套件以及具有套件的半导体处理室。 更具体地说，这里描述的实施例涉及一种工艺套件，其包括用于物理沉积室中的盖环，屏蔽件和隔离器。 处理工具包的组件单独使用并结合使用，可显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽件相比，这些屏蔽件提供了扩展的RF返回路径，这些RF返回路径导致RF谐波，从而在处理腔外部引起杂散等离子体，处理套件的组件减少了RF返回路径，从而改善了内部处理区域中的等离子体遏制。

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