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    Oxygen absorbing agent and deoxidative container having excellent swelling resistance, peeling resistance and surface smoothness
    13.
    发明专利
    Oxygen absorbing agent and deoxidative container having excellent swelling resistance, peeling resistance and surface smoothness 有权
    氧气吸收剂和脱氧剂具有优异的耐开裂性，耐电痕性和表面光滑性

    公开(公告)号：JP2008292451A

    公开(公告)日：2008-12-04

    申请号：JP2008010978

    申请日：2008-01-21

    Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

    Inventor： MERASSI ANGELO ANTONIO ,  ZERBINI SARAH ,  SIMONI BARBARA

    IPC: G01P15/125 ,  H01L29/84

    CPC classification number: B81B3/0051 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P2015/0831

    Abstract: PROBLEM TO BE SOLVED: To reduce the risk of destruction due to impact and reduce the influences of electrostatic interaction. SOLUTION: In a micro-electromechanical device 1, a movable mass body 2 is suspended above a board 3 via an elastic suspension element rotatably around the elastic suspension element, a cover structure 10 is arranged above the movable mass body 2 and has an inner face 10a opposed to the movable mass body 2, and a stopper structure 12 is arranged on the inner face 10a of the cover structure 10 in the state of being protruded toward the movable mass body 2 to stop the motion of the movable mass body 2 being moved farther from the board 3 along an axis z crossing the board 3. The stopper structure 12 is opposed to the movable mass body 2 to reduce the influences of conflicting interaction, particularly to reduce the resultant torsion moment of the movable mass body 2 around the elastic suspension element. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：降低由冲击引起的破坏风险，减少静电相互作用的影响。 解决方案：在微机电装置1中，可移动质量体2通过可旋转地围绕弹性悬挂元件的弹性悬挂元件悬挂在板3上方，盖结构10布置在可移动质量体2上方并具有 与可移动质量体2相对的内表面10a和在结构体10的内表面10a上朝向可移动质量体2突出的状态设置有止动结构12，以阻止可移动体体的运动 2沿着与板3交叉的轴线z从板3移动得更远。止动结构12与可移动质量体2相对，以减小相互作用的冲击的影响，特别是减小可动体2的合力扭矩 围绕弹性悬挂元件。 版权所有（C）2009，JPO＆INPIT

    Device and method for protecting electronic appliance in critical motion condition, in particular in case of fall
    14.
    发明专利
    Device and method for protecting electronic appliance in critical motion condition, in particular in case of fall 有权
    关键运动条件下保护电子设备的装置和方法，特别是在FALL

    公开(公告)号：JP2008251148A

    公开(公告)日：2008-10-16

    申请号：JP2007313898

    申请日：2007-12-04

    Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

    Inventor： RIZZO PIAZZA RONCORONI ALESSAN ,  TRONCONI MICHELE ,  PASOLINI FABIO

    IPC: G11B19/04

    CPC classification number: G11B19/043

    Abstract: PROBLEM TO BE SOLVED: To provide a device and a method for protecting an electronic apparatus in case of falling.
    SOLUTION: The device for protecting an electronic apparatus includes a motion-detection device for supplying at least one of alert signals S
    FF , S
    R in response to conditions of motion of the protection device, a counter 18, a first logic circuit 9 for incrementing the counter 18 in the presence of a first value "1" of the alert signals S
    FF and S
    R in a first motion condition, and a second logic circuit 20 for generating a protection signal INT based on the count value C of the counter 18. The first logic circuit 19 decrements the counter 18 in the presence of a second value "0" of the alert signals S
    FF and S
    R in the first motion condition.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种在掉电的情况下保护电子设备的装置和方法。 解决方案：用于保护电子设备的装置包括运动检测装置，用于响应于以下条件提供警报信号S SB / R S，S SB / R S / 保护装置的运动，计数器18，第一逻辑电路9，用于在存在警报信号S FF 和S R“的第一值”1“时递增计数器18， / SB>和第二逻辑电路20，用于基于计数器18的计数值C产生保护信号INT。第一逻辑电路19在存在第二值“0”的情况下递减计数器18 “在第一运动条件下的警报信号S FF 和S R 。 版权所有（C）2009，JPO＆INPIT

    Memory device with ramp-like voltage biasing structure based on current generator
    15.
    发明专利
    Memory device with ramp-like voltage biasing structure based on current generator 有权
    基于电流发生器的具有偏置电压偏置结构的存储器件

    公开(公告)号：JP2006294213A

    公开(公告)日：2006-10-26

    申请号：JP2006015176

    申请日：2006-01-24

    Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクスエス.アール.エル.STMicroelectronics S.r.l.

    Inventor： SFORZIN MARCO ,  DEL GATTO NICOLA ,  FERRARIO MARCO ,  CONFALONIERI EMANUELE

    IPC: G11C16/06 ,  G11C16/02

    CPC classification number: G11C16/26

    Abstract: PROBLEM TO BE SOLVED: To provide a memory device generating bias voltage varied temporally and monotonously with a simple configuration. SOLUTION: This memory device (100) is provided with a plurality of memory cells (MC) storing a value respectively, at least one reference cell (Mr 0 to Mr 2 ), a bias means (115) for applying bias voltage (Vc, Vr) having a pattern of almost monotonous temporal time variation to a selected one group of the memory cells and at least the one reference cell, a means (130) detecting that current of the selected each memory cell and each reference cell reached the threshold value, and a means (145) for specifying a value stored in selected each memory cell conforming to time relation in which a current of the selected memory cell reaches the threshold value and a current of at least the one reference cell reaches the threshold value. The bias means is provided with a means (305) supplying the prescribed biasing current (Ib) to the selected memory cell and at least the one reference cell. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种利用简单配置产生时间上和单调变化的偏置电压的存储器件。 解决方案：该存储装置（100）具有分别存储值的多个存储单元（MC），至少一个参考单元（Mr 0 Mr Mr SB < 用于将具有几乎单调的时间变化的图案的偏置电压（Vc，Vr）施加到所选择的一组存储器单元和至少一个参考单元的偏置装置（115），装置（130） 检测所选择的每个存储单元和每个参考单元的电流达到阈值;以及用于指定存储在所选择的每个存储器单元中的值的装置（145），其符合所选存储单元的电流达到阈值的时间关系 值和至少一个参考单元的电流达到阈值。 偏置装置设置有将规定的偏置电流（Ib）提供给所选择的存储单元和至少一个参考单元的装置（305）。 版权所有（C）2007，JPO＆INPIT

    Detecting device for the midpoint voltage of transistor half bridge circuit
    19.
    发明专利
    Detecting device for the midpoint voltage of transistor half bridge circuit 审中-公开
    检测晶体管半桥电路中点电压的装置

    公开(公告)号：JP2011078305A

    公开(公告)日：2011-04-14

    申请号：JP2010218247

    申请日：2010-09-29

    Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

    Inventor： SANTORO CHRISTIAN LEONE ,  NOVELLI ALDO VITTORIO ,  ADRAGNA CLAUDIO

    IPC: H02M1/00

    CPC classification number: H02M3/337 ,  H02M1/083 ,  H02M1/38 ,  H02M2001/0058 ,  Y02B70/1491

    Abstract: PROBLEM TO BE SOLVED: To provide a detecting device for the midpoint voltage of a transistor half bridge circuit.
    SOLUTION: The half bridge circuit composed of a first transistor M1 and a second transistor M2 is driven so that the midpoint voltage undergoes transition from a low voltage value to a high voltage value and vice versa and is adapted to form a low impedance node for current signals Isink, Isource circulating in a capacitor. The detecting device is adapted to detect the current signals Isink, Isource, and has a detection means 10 which is adapted to output at least one first signal HL_comm or LH_comm indicating the transition from the low value to the high value or from the high value to the low value of the midpoint voltage according to the current signal.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于晶体管半桥电路的中点电压的检测装置。 解决方案：驱动由第一晶体管M1和第二晶体管M2组成的半桥电路，使得中点电压从低电压值转变为高电压值，反之亦然，并适于形成低阻抗 节点为电流信号Isink，Isource循环在电容器中。 该检测装置适于检测当前信号Isink，Isource，并且具有检测装置10，该检测装置适于输出至少一个第一信号HL_comm或LH_comm，该第一信号HL_comm或LH_comm指示从低值到高值或从高值转换到高值到 根据当前信号的中点电压的低值。 版权所有（C）2011，JPO＆INPIT

    Self-repair method for nonvolatile memory device with erasing/programming failure, and nonvolatile memory device therefor
    20.
    发明专利
    Self-repair method for nonvolatile memory device with erasing/programming failure, and nonvolatile memory device therefor 有权
    具有擦除/编程故障的非易失性存储器件的自修复方法及其非易失性存储器件

    公开(公告)号：JP2010165456A

    公开(公告)日：2010-07-29

    申请号：JP2010106014

    申请日：2010-04-30

    Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

    Inventor： MICHELONI RINO ,  LOSAVIO ALDO

    IPC: G11C16/06 ,  G11C29/12 ,  G11C29/00 ,  G11C29/04 ,  G11C29/44

    CPC classification number: G11C29/82 ,  G11C29/846

    Abstract: PROBLEM TO BE SOLVED: To internally identify and correct a defective part in the memory device, increase service life thereof and improve manufacturing yield. SOLUTION: The memory device (20) has: a memory block (1) formed by a plurality of standard sectors (15) and a redundancy portion (2); a control circuit (3) which controls programming and erasing of the data of the memory cells; and a correctness verifying circuit (7) for the data stored in the memory cells. The correctness verifying circuit (7) is enabled by the control circuit (3) and generates an incorrect-datum signal in the event of detection of at least one non-functioning cell. The control circuit moreover activates redundancy, enables the redundancy portion (2) and stores redundancy data in a redundancy-memory stage (5b) in the presence of an incorrect datum. Various solutions are presented that implement column, row and sector redundancy, both in case of erasing and programming. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：为了内部识别和纠正存储器件中的缺陷部件，增加其使用寿命并提高制造成品率。 存储装置（20）具有：由多个标准扇区（15）和冗余部分（2）形成的存储块（1）。 控制电路（3），其控制存储器单元的数据的编程和擦除; 以及用于存储在存储单元中的数据的正确性验证电路（7）。 正确性验证电路（7）由控制电路（3）使能，并且在检测至少一个非功能单元的情况下产生不正确的基准信号。 此外，控制电路激活冗余，使得冗余部分（2）能够在存在不正确的数据的情况下将冗余数据存储在冗余存储器级（5b）中。 提出了实现列，行和扇区冗余的各种解决方案，无论在擦除和编程的情况下。 版权所有（C）2010，JPO＆INPIT

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