公开(公告)号：WO2006113135A2

公开(公告)日：2006-10-26

申请号：PCT/US2006012741

申请日：2006-04-05

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

IPC: G03F1/00 ,  G03C5/00 ,  G06K9/00

CPC classification number: G03F1/84 ,  Y10S430/146

Abstract: Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.

Abstract translation: 公开了用于使用通过将测量的标线参数的集合与一组参考掩模版参数进行比较而生成的光罩全局变化图来确定和校正光罩变化的技术。 通过掩模版检查获得测量的掩模版参数，并且变化图识别标线区域和相关联的校正水平。 在一个实施例中，将变化数据传送到通过在标定的标线区域内的散射中心嵌入来修改掩模版的系统，从而改善变化。 在另一个实施例中，变化数据被传送到晶片步进器或扫描器，该晶片步进器或扫描器又改变了使用掩模版制造晶片的条件，从而补偿了根据设计的变化和生产晶片。

公开(公告)号：WO2012125581A3

公开(公告)日：2012-12-27

申请号：PCT/US2012028812

申请日：2012-03-12

Applicant: KLA TENCOR CORP ,  XIONG YALIN ,  STOKOWSKI STANLEY E

Inventor： XIONG YALIN ,  STOKOWSKI STANLEY E

IPC: G03F1/22 ,  G03F1/72 ,  G03F1/84

CPC classification number: G03F1/24 ,  G03F1/72 ,  G03F1/84

Abstract: An EUV integrated circuit fabrication method and system EUV that includes blank inspection, defect characterization, simulation, pattern compensation, modification of the mask writer database, inspection and simulation of patterned masks, and patterned mask repair. The system performs blank inspection to identify defects at multiple focal planes within the blank. The mask can be relocated on the blank and alterations to the pattern can be developed to compensate for the defects prior to prior to patterning the mask. Once the mask has been patterned, the reticle is inspected to identify any additional or remaining defects that were not picked up during blank inspection or fully mitigated through pattern compensation. The patterned reticle can then be repaired prior to integrated circuit fabrication.

Abstract translation: EUV集成电路制造方法和系统EUV包括空白检查，缺陷表征，模拟，图案补偿，掩模写入器数据库的修改，图案化掩模的检查和模拟以及图案化掩模修复。 系统执行空白检查以识别空白中多个焦平面上的缺陷。 掩模可以重新定位在坯件上，并且可以开发对图案的改变以在图案化掩模之前补偿缺陷。 一旦掩模被图案化，检查掩模版以识别在空白检查期间未被拾取的任何附加或剩余的缺陷，或通过图案补偿完全减轻。 然后可以在集成电路制造之前修复图案化的掩模版。

公开(公告)号：WO2006113126A2

公开(公告)日：2006-10-26

申请号：PCT/US2006/012608

申请日：2006-04-03

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  WATSON, Sterling, G. ,  LEVY, Ady ,  MACK, Chris, A. ,  STOKOWSKI, Stanley, E. ,  SAIDIN, Zain, K.

Inventor： WATSON, Sterling, G. ,  LEVY, Ady ,  MACK, Chris, A. ,  STOKOWSKI, Stanley, E. ,  SAIDIN, Zain, K.

IPC: G03F1/00 ,  G03C5/00 ,  G06K9/00

CPC classification number: G03F1/84 ,  G03F1/38 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70625 ,  Y10S430/146

Abstract: Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may "heal" the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.

Abstract translation: 网状物可以包括用于局部改变光罩光学性质的遮蔽元件（SE）。 然而，由于辐射可能“治愈”SE，因此在光刻过程中由于反复暴露于辐射而导致这样的掩模版可能随时间而降解。 公开了用于监测掩模版的技​​术，以便保持关于掩模版的光学性质和将使用掩模版印刷的晶片上的图案的均匀性的置信度。 网格线进行定期检查，包括掩模版传输测量和/或掩模版的空中成像。 当这种检查表明足够的掩模版降解时，标线片被标记以在其后续在光刻工艺中使用之前进行校正。