公开(公告)号：WO2006113145A2

公开(公告)日：2006-10-26

申请号：PCT/US2006012846

申请日：2006-04-07

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

IPC: G06F17/50 ,  G03F1/00

CPC classification number: G03F1/84 ,  G03F1/36 ,  Y10S430/146

Abstract: Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.

Abstract translation: 公开了用于减轻图案化晶片上的方差（例如，临界尺寸方差）的系统和方法。 通常，使用一个或多个掩模版制造和/或晶片处理模型预测图案化晶片的变化。 预测的方差用于修改用于产生图案化晶片的掩模版的所选透明部分。 在具体实现中，诸如毫微微秒激光器的光束在多个嵌入位置被施加到掩模版，并且光束被配置为在掩模版的透明材料内形成改变的光学特性的特定体积 在指定位置。 在掩模版的特定位置处产生的这些掩模版体积在这样的特定位置处导致通过掩模版的光透射或剂量的变化量，以便减轻使用修改的掩模版图案化的晶片上识别的方差。

公开(公告)号：WO2010147846A3

公开(公告)日：2010-12-23

申请号：PCT/US2010/038202

申请日：2010-06-10

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  STOKOWSKI, Stanley, E.

Inventor： STOKOWSKI, Stanley, E.

IPC: H01L21/027 ,  G03F1/08 ,  H01L21/66

Abstract: Provided are novel inspection methods and systems for inspecting unpatterned objects, such as extreme ultraviolet (EUV) mask blanks, for surface defects, including extremely small defects. Defects may include various phase objects, such as bumps and pits that are only about 1 nanometer in height, and small particles. Inspection is performed at wavelengths less than about 250 nanometers, such as a reconfigured deep UV inspection system. A partial coherence sigma is set to between about 0.15 and 0.5. Phase defects can be found by using one or more defocused inspection passes, for example at one positive depth of focus (DOF) and one negative DOF. In certain embodiments, DOF is between about -1 to -3 and/or +1 to +3. The results of multiple inspection passes can be combined to differentiate defect types. Inspection methods may involve applying matched filters, thresholds, and/or correction factors in order to improve a signal to noise ratio.

公开(公告)号：WO2010147846A2

公开(公告)日：2010-12-23

申请号：PCT/US2010038202

申请日：2010-06-10

Applicant: KLA TENCOR TECH CORP ,  STOKOWSKI STANLEY E

Inventor： STOKOWSKI STANLEY E

IPC: H01L21/027 ,  G03F1/00 ,  H01L21/66

CPC classification number: G03F1/84 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

Abstract: Provided are novel inspection methods and systems for inspecting unpatterned objects, such as extreme ultraviolet (EUV) mask blanks, for surface defects, including extremely small defects. Defects may include various phase objects, such as bumps and pits that are only about 1 nanometer in height, and small particles. Inspection is performed at wavelengths less than about 250 nanometers, such as a reconfigured deep UV inspection system. A partial coherence sigma is set to between about 0.15 and 0.5. Phase defects can be found by using one or more defocused inspection passes, for example at one positive depth of focus (DOF) and one negative DOF. In certain embodiments, DOF is between about -1 to -3 and/or +1 to +3. The results of multiple inspection passes can be combined to differentiate defect types. Inspection methods may involve applying matched filters, thresholds, and/or correction factors in order to improve a signal to noise ratio.

Abstract translation: 提供了用于检查诸如极紫外（EUV）掩模坯料等未图案化物体的新颖的检查方法和系统，用于表面缺陷，包括极小的缺陷。 缺陷可以包括各种相位物体，例如高度仅为约1纳米的凸块和凹坑以及小颗粒。 检测在小于约250纳米的波长下进行，例如重新配置的深UV检测系统。 部分相干σ设定在约0.15和0.5之间。 通过使用一个或多个散焦的检查通道可以找到相位缺陷，例如在一个正的深度焦点（DOF）和一个负的DOF。 在某些实施方案中，DOF在约-1至-3和/或+1至+3之间。 可以组合多次检查通过的结果来区分缺陷类型。 检查方法可以包括应用匹配滤波器，阈值和/或校正因子，以便提高信噪比。

公开(公告)号：WO2006113126A3

公开(公告)日：2009-04-09

申请号：PCT/US2006012608

申请日：2006-04-03

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

IPC: G06K9/00 ,  G01R31/26 ,  H01L21/22 ,  H01L21/38 ,  H01L21/66

CPC classification number: G03F1/84 ,  G03F1/38 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70625 ,  Y10S430/146

Abstract: Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may "heal" the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.

Abstract translation: 网状物可以包括用于局部改变光罩光学性质的遮蔽元件（SE）。 然而，由于辐射可能“治愈”SE，因此在光刻过程中由于反复暴露于辐射而导致这样的掩模版可能随时间而降解。 公开了用于监测掩模版的技​​术，以便保持关于掩模版的光学性质和将使用掩模版印刷的晶片上的图案的均匀性的置信度。 网格线进行定期检查，包括掩模版传输测量和/或掩模版的空中成像。 当这种检查表明足够的掩模版降解时，标线片被标记以在其后续在光刻工艺中使用之前进行校正。

公开(公告)号：WO2006113135A3

公开(公告)日：2006-10-26

申请号：PCT/US2006/012741

申请日：2006-04-05

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  WATSON, Sterling, G. ,  LEVY, Ady ,  MACK, Chris, A. ,  STOKOWSKI, Stanley, E. ,  SAIDIN, Zain, K.

Inventor： WATSON, Sterling, G. ,  LEVY, Ady ,  MACK, Chris, A. ,  STOKOWSKI, Stanley, E. ,  SAIDIN, Zain, K.

IPC: G03F1/00 ,  G03F9/00 ,  G03C5/00 ,  G06F17/50

Abstract: Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.

公开(公告)号：WO2006113146A2

公开(公告)日：2006-10-26

申请号：PCT/US2006/012847

申请日：2006-04-07

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  WATSON, Sterling, G. ,  LEVY, Ady ,  MACK, Chris, A. ,  STOKOWSKI, Stanley, E. ,  SAIDIN, Zain, K. ,  ZURBRICK, Larry, S.

Inventor： WATSON, Sterling, G. ,  LEVY, Ady ,  MACK, Chris, A. ,  STOKOWSKI, Stanley, E. ,  SAIDIN, Zain, K. ,  ZURBRICK, Larry, S.

IPC: G03F1/00 ,  G03C5/00 ,  G06K9/00

CPC classification number: G06K9/2063 ,  G03F1/72 ,  G03F1/84 ,  Y10S430/146

Abstract: Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.

Abstract translation: 公开了用于修改掩模版的系统和方法。 通常，来自多个晶片的检查结果或来自光刻模型的预测结果被用于单独地减小光罩的特定位置处的剂量或任何其它光学特性。 在一个实施例中，掩模版的任何合适的光学性质通过光束（例如毫微微秒级激光器）在掩模版上的特定位置处被修改，以便加宽用于这种光学性质的工艺窗口。 光学性质的实例包括剂量，相位，照射角度和双折射率。 使用光束在光罩上的特定位置处调整光学特性的技术可以用于除加宽工艺窗口之外的其它目的。

公开(公告)号：WO1996018093A1

公开(公告)日：1996-06-13

申请号：PCT/US1995016172

申请日：1995-12-08

Applicant: TENCOR INSTRUMENTS ,  NIKOONAHAD, Mehrdad ,  STOKOWSKI, Stanley, E.

Inventor： TENCOR INSTRUMENTS

IPC: G01N21/00

CPC classification number: G01N21/95623 ,  G01N21/94 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/8825 ,  G01R31/2831 ,  G01R31/308 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A high sensitivity and high throughput surface inspection system directs a focused beam of light (38) at a grazing angle towards the surface to be inspected (40). Relative motion is caused between the beam (38) and the surface (40) so that the beam (38) scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anomalies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light (38) illuminates an area of the surface between 5-15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).

Abstract translation: 高灵敏度和高通量的表面检查系统将聚焦光束（38）以掠射角度朝向要检查的表面（40）引导。 在光束（38）和表面（40）之间产生相对运动，使得光束（38）扫描覆盖基本上整个表面的扫描路径，并且收集沿着路径散射的光以检测异常。 扫描路径包括多个直扫描路径段阵列。 聚焦光束（38）照亮了宽度为5-15微米之间的表面区域，该系统能够超过150毫米直径的晶片（6英寸晶圆）超过约40个晶片，过量 对于200毫米直径的晶片（8英寸晶圆），每小时约20个晶片，对于300毫米直径的晶片（12英寸晶圆），每小时超过约10个晶片。

公开(公告)号：WO2012125581A2

公开(公告)日：2012-09-20

申请号：PCT/US2012/028812

申请日：2012-03-12

Applicant: KLA-TENCOR CORPORATION ,  XIONG, Yalin ,  STOKOWSKI, Stanley E.

Inventor： XIONG, Yalin ,  STOKOWSKI, Stanley E.

IPC: G03F1/22 ,  G03F1/84 ,  G03F1/72

CPC classification number: G03F1/24 ,  G03F1/72 ,  G03F1/84

Abstract: An EUV integrated circuit fabrication method and system EUV that includes blank inspection, defect characterization, simulation, pattern compensation, modification of the mask writer database, inspection and simulation of patterned masks, and patterned mask repair. The system performs blank inspection to identify defects at multiple focal planes within the blank. The mask can be relocated on the blank and alterations to the pattern can be developed to compensate for the defects prior to prior to patterning the mask. Once the mask has been patterned, the reticle is inspected to identify any additional or remaining defects that were not picked up during blank inspection or fully mitigated through pattern compensation. The patterned reticle can then be repaired prior to integrated circuit fabrication.

Abstract translation: 包括空白检查，缺陷表征，模拟，图案补偿，掩模写入器数据库的修改，图案化掩模的检查和模拟以及图案化掩模修复的EUV集成电路制造方法和系统EUV。 系统执行空白检查以识别坯料内多个焦平面的缺陷。 可以将掩模重新定位在坯件上，并且可以开发图案的变化以在图案化掩模之前补偿缺陷。 一旦掩模已被图案化，就检查掩模版以识别在空白检查期间未拾取或通过图案补偿完全缓解的任何额外或剩余缺陷。 然后可以在集成电路制造之前修复图案化的掩模版。

公开(公告)号：WO2006113146A3

公开(公告)日：2007-08-30

申请号：PCT/US2006012847

申请日：2006-04-07

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K ,  ZURBRICK LARRY S

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K ,  ZURBRICK LARRY S

IPC: G03F1/00

CPC classification number: G06K9/2063 ,  G03F1/72 ,  G03F1/84 ,  Y10S430/146

Abstract: Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.

Abstract translation: 公开了用于修改掩模版的系统和方法。 通常，来自多个晶片的检查结果或来自光刻模型的预测结果被用于单独地减小光罩的特定位置处的剂量或任何其它光学特性。 在一个实施例中，掩模版的任何合适的光学性质通过光束（例如毫微微秒级激光器）在掩模版上的特定位置处被修改，以便加宽用于这种光学性质的工艺窗口。 光学性质的实例包括剂量，相位，照射角度和双折射率。 使用光束在光罩上的特定位置处调整光学特性的技术可以用于除加宽工艺窗口之外的其它目的。

公开(公告)号：WO2006113145A3

公开(公告)日：2006-10-26

申请号：PCT/US2006/012846

申请日：2006-04-07

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  WATSON, Sterling, G. ,  LEVY, Ady ,  MACK, Chris, A. ,  STOKOWSKI, Stanley, E. ,  SAIDIN, Zain, K.

Inventor： WATSON, Sterling, G. ,  LEVY, Ady ,  MACK, Chris, A. ,  STOKOWSKI, Stanley, E. ,  SAIDIN, Zain, K.

IPC: G01P3/36 ,  G01N21/00 ,  G02B23/10

Abstract: Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.