산화텅스텐 미립자의 제조방법
    11.
    发明公开
    산화텅스텐 미립자의 제조방법 有权
    三氧化钨微粒的制备方法

    公开(公告)号:KR1020150102163A

    公开(公告)日:2015-09-07

    申请号:KR1020140023477

    申请日:2014-02-27

    Abstract: 본 발명은 산화텅스텐 미립자의 제조방법 및 이를 이용하여 제조되는 산화텅스텐 미립자에 관한 것으로서, 본 발명에 따른 산화텅스텐 미립자의 제조방법은 화학침전법을 이용하여 산화텅스텐의 전구체인 암모늄 파라 텅스테이트(APT, (NH
    4 )
    10 ·(H
    2 W
    12 0
    42 )·4H
    2 O)로부터 순도가 높고 입도가 작으며 균일한 산화텅스텐 미립자를 제조할 수 있으므로, 산화텅스텐이 사용되는 다양한 분야에서 유용하게 사용될 수 있다.

    Abstract translation: 本发明涉及通过使用它们制造的氧化钨微粒和氧化钨微粒的制造方法。 根据本发明,氧化钨微粒的制造方法可以由(NH_4)_10·(H_2W_12O_42)的对位钨酸铵(APT)制造具有小而均匀的粒度和高纯度的氧化钨微粒, ·4H_2O作为氧化钨的前体使用化学沉淀法,因此可用于使用氧化钨的各种领域。

    수산화니켈 전극 제조 방법
    13.
    发明公开
    수산화니켈 전극 제조 방법 无效
    硝酸电沉积法制备镍氢电极的方法

    公开(公告)号:KR1020130047869A

    公开(公告)日:2013-05-09

    申请号:KR1020110112671

    申请日:2011-11-01

    Abstract: PURPOSE: A manufacturing method of a hydroxide nickel electrode is provided easily manufacture a hydroxide nickel(Ni(OH)2) film electrode for a super capacitor using a static current electrodeposition. CONSTITUTION: A manufacturing method of a hydroxide nickel electrode comprises a step of manufacturing a (Ni(NO3)2·6H2O) electrodeposition aqueous solution of 20-50 °C(S1); a step of dipping stainless steel, as a current collector, in the Ni((NO3)2·6H2O) electrodeposition aqueous solution(S2); a step of manufacturing an electrode by forming Ni(OH)2 on the stainless steel by an electrochemical method at room temperature and atmospheric pressure(S3); and a step of drying the manufactured Ni(OH)2 electrode at 20-30 °C(S4). [Reference numerals] (S1) Manufacture nickel hydroxide(Ni(NO3)2·6H2O) electrodeposition aqueous solution of 20-50°C range; (S2) Deposit stainless steel, as a current collector, into the nickel hydroxide(Ni(NO3)2·6H2O) electrodeposition aqueous solution; (S3) Manufacture a nickel hydroxide(Ni(OH)2) electrode on the stainless steel by an electrochemical method at room temperature and atmospheric pressure; (S4) Dry the nickel hydroxide(Ni(OH)2) electrode at 20-30°C

    Abstract translation: 目的:提供氢氧化镍电极的制造方法,其使用静电电沉积容易地制造用于超级电容器的氢氧化镍(Ni(OH)2)膜电极。 构成:氢氧化镍电极的制造方法包括制造20-50℃的(Ni(NO 3)2·6H 2 O)电沉积水溶液(S1)的工序。 在Ni((NO 3)2·6H 2 O)电沉积水溶液(S2)中浸渍不锈钢作为集电体的步骤; 在室温和大气压下通过电化学方法在不锈钢上形成Ni(OH)2来制造电极的步骤(S3); 以及在20-30℃干燥所制造的Ni(OH)2电极的步骤(S4)。 (参考号)(S1)制造20-50℃范围的氢氧化镍(Ni(NO 3)2·6H 2 O)电沉积水溶液; (S2)将作为集电体的不锈钢沉积到氢氧化镍(Ni(NO 3)2·6H 2 O)电沉积水溶液中; (S3)在室温和大气压下,通过电化学方法在不锈钢上制造氢氧化镍(Ni(OH)2)电极; (S4)在20-30℃下干燥氢氧化镍(Ni(OH)2)电极

    폐유리를 이용한 발포유리 제조방법
    14.
    发明公开
    폐유리를 이용한 발포유리 제조방법 有权
    使用废弃玻璃的泡沫玻璃的制备方法,以及使用测量仪的玻璃泡沫范围的预测方法

    公开(公告)号:KR1020140082722A

    公开(公告)日:2014-07-02

    申请号:KR1020147010824

    申请日:2011-11-22

    CPC classification number: B09B3/00 C03B19/08 C03C1/002 C03C11/007

    Abstract: An aspect of the present invention provides a method to manufacture foam glass using waste glass comprising the steps of: manufacturing a molded body by pressurizing waste glass powder composed of sodium silicate or boroaluminosilicate in a forming mold without adding a foaming agent; and sintering and foaming the molded body at temperatures of 600-1000°C, wherein a method to manufacture the waste glass powder comprises the step of pulverizing waste glass composed of sodium silicate or boroaluminosilicate by a wet pulverization process.

    Abstract translation: 本发明的一个方面提供了一种使用废玻璃制造泡沫玻璃的方法,包括以下步骤:通过在成型模具中加压由硅酸钠或硼硅铝酸盐组成的废玻璃粉末而不添加发泡剂来制造成型体; 并且在600-1000℃的温度下烧结和发泡成型体,其中制造废玻璃粉末的方法包括通过湿式粉碎法粉碎由硅酸钠或硼硅铝酸盐组成的废玻璃的步骤。

    산화수산화니켈-탄소나노튜브 나노복합체 전극의 제조 방법
    15.
    发明公开
    산화수산화니켈-탄소나노튜브 나노복합체 전극의 제조 방법 无效
    多壁碳纳米管纳米复合材料中充电储存方法

    公开(公告)号:KR1020130047885A

    公开(公告)日:2013-05-09

    申请号:KR1020110112692

    申请日:2011-11-01

    CPC classification number: Y02E60/13 H01G11/86 H01G11/34 H01G11/36

    Abstract: PURPOSE: A method for fabricating an NiOOH-carbon nanotube nano composite electrode is provided to be used for super capacitor with high energy density and power density. CONSTITUTION: A method for fabricating NiOOH-carbon nanotube nano composite electrode comprises the steps of: producing nickel hydroxide(Ni(NO3)2-6H2O) liquid solution having a temperature between 20 and 30°C(S1); dispersing and drying the liquid solution after dipping a carbon nanotube having a porous structure in the liquid solution(S2); heat-treating nickel hydroxide and carbon nanotube composite produced in the previous step at a temperature of 200 to 250°C(S3). [Reference numerals] (S1) Produce nickel hydroxide(Ni(NO3)2·6H2O) liquid solution with a temperature of 20-30°C; (S2) Disperse and dry the nickel hydroxide(Ni(NO3)2·6H2O) liquid solution after dipping a carbon nanotube having a porous structure in the liquid solution; (S3) Heat-treat the mixture of the nickel hydroxide(Ni(NO3)2·6H2O) and the carbon nanotube at a temperature of 200-250°C; (S4) Manufacture an electrode by mixing with an active material, a binder, and a solvent

    Abstract translation: 目的:提供一种制备NiOOH-碳纳米管纳米复合电极的方法,用于具有高能量密度和功率密度的超级电容器。 构成:制造NiOOH-碳纳米管纳米复合电极的方法包括以下步骤:制备温度在20至30℃(S1)之间的氢氧化镍(Ni(NO 3)2·6H 2 O)液体溶液; 在液体溶液中浸渍具有多孔结构的碳纳米管之后分散和干燥液体(S2); 在上述步骤中,在200-250℃的温度下制备热处理氢氧化镍和碳纳米管复合物(S3)。 (附图标记)(S1)在20-30℃的温度下生成氢氧化镍(Ni(NO 3)2·6H 2 O)液体溶液; (S2)在液体溶液中浸渍具有多孔结构的碳纳米管后,分散并干燥氢氧化镍(Ni(NO 3)2·6H 2 O)液体溶液; (S3)在200-250℃的温度下热处理氢氧化镍(Ni(NO 3)2·6H 2 O)和碳纳米管的混合物; (S4)通过与活性物质,粘合剂和溶剂混合制造电极

    산화텅스텐 및 그 제조방법
    17.
    发明授权
    산화텅스텐 및 그 제조방법 有权
    氧化钨及其制造方法

    公开(公告)号:KR101741308B1

    公开(公告)日:2017-05-30

    申请号:KR1020150023365

    申请日:2015-02-16

    Abstract: 텅스텐정광및 무기산의혼합물을 pH 4 이하의범위로제어하면서텅스텐산(HWO)을제조하는단계; 및제조된텅스텐산(HWO)를 350 내지 650℃에서열처리하는단계를포함하는산화텅스텐미립자의제조방법과상기방법으로제조된산화텅스텐미립자를제공하며, 이를통해순도가높고입도가작으며균일한산화텅스텐미립자를제조할수 있으므로, 다양한분야에서유용하게사용가능하다.

    Abstract translation: 制备钨酸(HWO),同时控制钨精矿和无机酸的混合物至pH4或更低; 以及一种用于制造钨氧化物微粒,包括热的步骤处理从350所产生的钨(HWO)到650℃并提供由上述方法制备的氧化钨微粒的制造方法,和具有高纯度粒径提及,通过该均匀的氧化 可以生产钨微粒,以便它们可以有效地用于各种领域。

    고순도 탄화규소(SiC)의 제조방법
    18.
    发明公开
    고순도 탄화규소(SiC)의 제조방법 审中-实审
    高纯度碳化硅(SiC)的制造方法

    公开(公告)号:KR1020170054042A

    公开(公告)日:2017-05-17

    申请号:KR1020150156724

    申请日:2015-11-09

    Abstract: 본발명은고순도탄화규소(SiC)의제조방법에관한것이다. 본발명에따른탄화규소(SiC)의제조방법은불화칼슘(CaF)을포함하는소결조제를이용하여아크방전을수행함으로써반응온도가반응물외부로분산되는것을차단하여탄화규소(SiC)의생성속도를향상시킬수 있을뿐만아니라부반응을억제하여탄화규소의제조효율및 순도를향상시키는효과가우수하다.

    Abstract translation: 本发明涉及生产高纯度碳化硅(SiC)的方法。 根据本发明的用于制造碳化硅(SiC)的方法包括使用含有氟化钙(CaF)的烧结助剂来执行电弧放电,以防止反应温度分散在反应物之外, 而且通过抑制副反应来提高碳化硅的生产效率和纯度的效果也是优异的。

    열전도성 기재 및 이의 제조방법
    19.
    发明公开
    열전도성 기재 및 이의 제조방법 无效
    导热基板及其制备方法

    公开(公告)号:KR1020150115996A

    公开(公告)日:2015-10-15

    申请号:KR1020140039893

    申请日:2014-04-03

    CPC classification number: B32B9/007 B32B18/00 C04B35/52 C04B35/584 H05K7/20

    Abstract: 본발명은탄소재의기판을형성하는제1 층및 제1 층의일면또는양면에형성되며, 질화규소, 질화알루미늄, 질화리튬및 실리콘카바이드중 1 종이상을함유하는제2 층을포함하는열전도성기재및 이의제조방법에관한것으로서, 1000℃이상의고온에서도적용가능하며, 산소가스, 오존가스및 이산화질소가스등의반응성가스분위기에서도산화를방지할수 있는열전도성기재를제공한다.

    Abstract translation: 导热基材技术领域本发明涉及一种导热基材,其特征在于,包括:形成碳基基板的第一层; 以及设置在第一层的一侧或两侧并且在氮化硅,氮化铝,氮化锂和碳化硅中含有至少一种化合物的第二层,并且还涉及其制造方法。 此外,本发明提供一种即使在高于或等于1000℃的高温下也可应用的导热性基材,即使在包含氧气,臭氧气体和二氧化氮气体的气氛或反应性气体中也能防止氧化。

    이트리아 질산염을 소결조제로 사용한 질화알루미늄 소결체 및 그 제조방법
    20.
    发明公开
    이트리아 질산염을 소결조제로 사용한 질화알루미늄 소결체 및 그 제조방법 有权
    使用硝酸铁作为烧结助剂和其制备方法的氮化铝烧结体

    公开(公告)号:KR1020130095112A

    公开(公告)日:2013-08-27

    申请号:KR1020120016563

    申请日:2012-02-17

    Abstract: PURPOSE: An aluminum nitride sintered body using yttria nitrate as a sintering aid, a manufacturing method thereof and a semiconductor substrate including the same realize high thermal conductive and mechanical characteristics and the aluminum nitride sintered body can be used in a semiconductor substrate, etc. CONSTITUTION: A manufacturing method of an aluminum nitride sintered body comprises the steps of: manufacturing an aqueous solution containing yttria nitrate; dispersing and drying aluminum nitride in the manufactured aqueous solution; heat-treating the dried mixture at 300-700°C; and pressurizing and sintering the mixture. [Reference numerals] (AA) First step of producing Y(NO_3)_3·6H_2O solution within 20-30 deg. C; (BB) Second step of depositing, dispersing aluminum nitride in the Y(NO_3)_3·6H_2O solution and drying; (CC) Third step of heat-treating the produced aluminum nitride/yttria mixture at 500 deg. C; (DD) Fourth step of producing aluminum nitride sintered body by using a hot-press

    Abstract translation: 目的:使用硝酸钇作为烧结助剂的氮化铝烧结体及其制造方法和包含该氮化铝的半导体基板实现高导热性和机械特性,并且氮化铝烧结体可用于半导体衬底等。 :氮化铝烧结体的制造方法,其特征在于,包括:制造含有硝酸钇的水溶液; 在制造的水溶液中分散和干燥氮化铝; 在300-700℃下对干燥的混合物进行热处理; 并对混合物进行加压和烧结。 (AA)在20-30度内生成Y(NO 3)3·6H 2 O溶液的第一步骤。 C; (BB)将氮化铝沉淀在Y(NO 3)3·6H 2 O溶液中并进行干燥的第二步骤; (CC)在500度下对所生产的氮化铝/氧化钇混合物进行热处理的第三步骤。 C; (DD)使用热压制造氮化铝烧结体的第四工序

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