公开(公告)号：KR101438733B1

公开(公告)日：2014-09-05

申请号：KR1020130048200

申请日：2013-04-30

Applicant: 고려대학교 산학협력단

Inventor： 이철진 ,  신동훈 ,  윤기남

IPC: H01J1/30 ,  H01J9/02

Abstract: Disclosed are a vertical vacuum electronic device, an integrated device, and a method for manufacturing a vertical vacuum electronic device. The vertical vacuum electronic device according to an embodiment of the present invention comprises: a substrate; a cathode formed on the surface of the substrate to expose a predetermined region of the surface of the substrate; an emitter electrically connected to the cathode and formed on the cathode; an insulating material having a smaller area than the emitter and formed on the emitter; an anode formed on the insulating material; and a gate which is inserted into the insulating material, exposes a portion near the predetermined region, and is arranged to surround the predetermined region, wherein the predetermined region is determined by the pattern of the gate.

Abstract translation: 公开了垂直真空电子装置，集成装置和垂直真空电子装置的制造方法。 根据本发明实施例的垂直真空电子器件包括：衬底; 阴极，形成在所述衬底的表面上以暴露所述衬底的表面的预定区域; 电连接到阴极并形成在阴极上的发射极; 绝缘材料，具有比发射极小并形成在发射极上的面积; 形成在绝缘材料上的阳极; 并且插入到绝缘材料中的栅极暴露预定区域附近的部分，并且被布置成围绕预定区域，其中预定区域由栅极的图案确定。

公开(公告)号：KR101209168B1

公开(公告)日：2012-12-10

申请号：KR1020110069740

申请日：2011-07-14

Applicant: 고려대학교 산학협력단

Inventor： 이철진 ,  코이자이자노바라우산비. ,  황두희 ,  윤기남

IPC: B82B3/00 ,  B82B1/00 ,  C07D241/12

Abstract: 본원은테트라메틸피라진(TMP) 및그의유도체로이루어진군에서선택되는화합물을포함하는탄소나노튜브의 n-도핑재료, 이를이용한탄소나노튜브의 n-도핑방법, 이를이용하여 n-도핑된탄소나노튜브, 및상기 n-도핑된탄소나노튜브를이용한소자에관한것이다.