公开(公告)号：KR101209168B1

公开(公告)日：2012-12-10

申请号：KR1020110069740

申请日：2011-07-14

Applicant: 고려대학교 산학협력단

Inventor： 이철진 ,  코이자이자노바라우산비. ,  황두희 ,  윤기남

IPC: B82B3/00 ,  B82B1/00 ,  C07D241/12

Abstract: 본원은테트라메틸피라진(TMP) 및그의유도체로이루어진군에서선택되는화합물을포함하는탄소나노튜브의 n-도핑재료, 이를이용한탄소나노튜브의 n-도핑방법, 이를이용하여 n-도핑된탄소나노튜브, 및상기 n-도핑된탄소나노튜브를이용한소자에관한것이다.

公开(公告)号：KR1020120008449A

公开(公告)日：2012-01-30

申请号：KR1020110069740

申请日：2011-07-14

Applicant: 고려대학교 산학협력단

Inventor： 이철진 ,  코이자이자노바라우산비. ,  황두희 ,  윤기남

IPC: B82B3/00 ,  B82B1/00 ,  C07D241/12

CPC classification number: H01L51/0048 ,  C07D241/12 ,  H01L21/02601 ,  H01L21/8238 ,  H01L29/786

Abstract: PURPOSE: The n-doping material and the n-doping method of carbon nanotube and elements using the same are provided to secure the stability of long-term n-doping in the air by using tetramethylpyrazine and the derivative compounds of the same as n-doping materials. CONSTITUTION: The n-doping material of carbon nanotube includes a compound selected from a group including tetramethylpyrazine and the derivative compounds of the same. The n-doping method of carbon nanotube n-dopes the carbon nanotube using the n-doping material at room temperature. The n-doped state of the carbon nanotube is adjusted by adjusting the concentration of the compound. A thin film transistor includes a channel layer(50), source/drain electrodes(30, 40) formed on both sides of the channel layer, a gate layer(10) corresponding to the channel layer, and a gate insulating layer(20) formed between the channel layer and the gate layer. The channel layer includes the n-doped carbon nanotube.

Abstract translation: 目的：提供碳纳米管的n掺杂材料和n掺杂方法以及使用其的元素，以通过使用四甲基吡嗪和与其相同的衍生化合物来确保长期n掺杂在空气中的稳定性， 掺杂材料。 构成：碳纳米管的n掺杂材料包括选自包括四甲基吡嗪和其衍生化合物的基团的化合物。 碳纳米管的n掺杂方法在室温下使用n掺杂材料掺杂碳纳米管。 通过调节化合物的浓度来调节碳纳米管的n掺杂状态。 薄膜晶体管包括沟道层（50），形成在沟道层两侧的源极/漏极（30,40），对应于沟道层的栅极层（10）和栅极绝缘层（20） 形成在沟道层和栅极层之间。 沟道层包括n掺杂碳纳米管。