公开(公告)号：KR1020090024415A

公开(公告)日：2009-03-09

申请号：KR1020070089422

申请日：2007-09-04

Applicant: 삼성모바일디스플레이주식회사

Inventor： 도성원 ,  여종모

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32183 ,  H01J37/32935

Abstract: A plasma-etching apparatus is provided to detect the plasma potential through the plug for the measurement and to continually monitor the plasma state while progressing the etching process. The first electrode is arranged inside the chamber(10) for the plasma. The substrate is mounted on the first electrode. The shield ring(30) surrounds the edge part of the first electrode. The second electrode is arranged in order to be faced with the first electrode. The spraying plate(50) sprays the process gas to the inside of chamber. The via hole is formed in order to expose a part of the first electrode to the shield ring. The plug(40) for measurement is formed in the via hole in order to be connected with the first electrode.

Abstract translation: 提供了一种等离子体蚀刻装置，用于检测用于测量的插塞的等离子体电位，并且在进行蚀刻处理的同时连续监视等离子体状态。 第一电极布置在用于等离子体的室（10）的内部。 基板安装在第一电极上。 屏蔽环（30）围绕第一电极的边缘部分。 布置第二电极以面对第一电极。 喷射板（50）将工艺气体喷射到室内。 形成通孔以便将第一电极的一部分暴露于屏蔽环。 用于测量的插头（40）形成在通孔中，以便与第一电极连接。