公开(公告)号：KR1020060108945A

公开(公告)日：2006-10-18

申请号：KR1020050030709

申请日：2005-04-13

Applicant: 삼성모바일디스플레이주식회사

Inventor： 안택 ,  서민철 ,  구재본

IPC: H01L29/786

CPC classification number: H01L51/0023 ,  H01L51/0014 ,  H01L51/105

Abstract: A method for manufacturing a TFT(Thin Film Transistor) and the TFT manufactured thereby are provided to improve the bonding between an electrode and an insulating layer and to perform easily an electrode patterning process by using the irradiation of a laser beam. A gate insulating layer(13) is formed on a gate electrode(12). A bonding layer(14a) is formed on the gate insulating layer. A conductive layer(14b) is formed on the bonding layer. Source and drain electrodes spaced apart from each other are formed on the resultant structure by etching simultaneously the bonding layer and the conductive layer using a laser beam irradiation. A semiconductor layer for contacting the source and drain electrodes is formed on the resultant structure.

Abstract translation: 提供了一种用于制造TFT（薄膜晶体管）的方法及其制造的TFT，以改善电极和绝缘层之间的接合，并且通过使用激光束的照射容易地执行电极图案化工艺。 栅绝缘层（13）形成在栅电极（12）上。 在栅极绝缘层上形成接合层（14a）。 在接合层上形成导电层（14b）。 通过使用激光束照射同时蚀刻接合层和导电层，在所得结构上形成彼此间隔开的源极和漏极。 在所得结构上形成用于接触源极和漏极的半导体层。