公开(公告)号：KR1020080017174A

公开(公告)日：2008-02-26

申请号：KR1020060078988

申请日：2006-08-21

Applicant: 삼성전기주식회사

Inventor： 명선영 ,  박길한 ,  유상덕 ,  박희석 ,  김학환 ,  이상범

IPC: H01L33/02

Abstract: A fabrication method of a nitride semiconductor light emitting device is provided to prevent a short circuit by adjusting a window size in a mask. A mask(23) having windows is formed on an upper surface of a base layer(22). The base layer is formed with a first conductive type nitride semiconductor. A first conductive type nitride semiconductor crystal(24) of a hexagonal pyramid structure is selectively grown on each of base layer regions exposed by the windows. The first conductive type nitride semiconductor crystal of the hexagonal pyramid structure has an inclined crystal surface to an upper surface of the base layer. An active layer(25) and a second conductive type nitride semiconductor layer(26) are sequentially grown on a surface of the first conductive type nitride semiconductor crystal. The mask is divided into at least two regions. The windows positioned on at least two regions have different sizes.

Abstract translation: 提供氮化物半导体发光器件的制造方法，以通过调节掩模中的窗口尺寸来防止短路。 在基层（22）的上表面上形成具有窗口的面罩（23）。 基层由第一导电型氮化物半导体形成。 在由窗户露出的每个基底层区域上选择性地生长六角锥形结构的第一导电型氮化物半导体晶体（24）。 六角锥形结构的第一导电型氮化物半导体晶体在基层的上表面具有倾斜的晶体表面。 在第一导电型氮化物半导体晶体的表面上依次生长有源层（25）和第二导电型氮化物半导体层（26）。 该掩模被分成至少两个区域。 位于至少两个区域的窗口具有不同的大小。