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公开(公告)号：KR1020080013636A
公开(公告)日：2008-02-13
申请号：KR1020060075407
申请日：2006-08-09
Applicant: 삼성전기주식회사
IPC: H01L33/16
CPC classification number: C30B25/04 , C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24
Abstract: A method for selectively growing a nitride semiconductor, a nitride semiconductor light emitting device, and a method for manufacturing the same are provided to reduce generation of stress and to uniformly maintain a thickness of an active layer by employing an intermediate isolation region having a tilt angle greater than that of a crystal surface of the other region. A mask(M) having an opening unit(W) is formed on a nitride semiconductor layer(33). A hexagon pyramid nitride semiconductor crystal structure(34) is selectively grown on the nitride semiconductor layer region exposed by the opening unit of the mask. The hexagon pyramid nitride semiconductor crystal structure has a slope crystal surface for an upper surface of the nitride semiconductor layer. The hexagon pyramid nitride semiconductor crystal structure includes at least one intermediate isolation region(34b). The intermediate isolation region has a crystal surface of a tilt angle greater than that of the crystal surface located on the upper and lower portions of the hexagon pyramid nitride semiconductor crystal structure.
Abstract translation: 提供了选择性地生长氮化物半导体的方法，氮化物半导体发光器件及其制造方法，以通过采用具有倾斜角的中间隔离区域来减少应力的产生和均匀地保持有源层的厚度 大于其他区域的晶体表面的厚度。 具有开口单元（W）的掩模（M）形成在氮化物半导体层（33）上。 在由掩模的开口单元暴露的氮化物半导体层区域上选择性地生长六角锥氮化物半导体晶体结构（34）。 六角锥氮化物半导体晶体结构具有用于氮化物半导体层的上表面的倾斜晶体表面。 六角锥氮化物半导体晶体结构包括至少一个中间隔离区域（34b）。 中间隔离区具有大于位于六角锥形氮化物半导体晶体结构的上部和下部的晶体表面的倾斜角的晶体表面。
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公开(公告)号：KR100755587B1
公开(公告)日：2007-09-06
申请号：KR1020060065567
申请日：2006-07-12
Applicant: 삼성전기주식회사
IPC: H01L33/12
Abstract: A nitride semiconductor light emitting device is provided to interrupt sufficiently overflowing halls by relieving an energy band gap difference between a hall interrupting layer and an active layer. An n-type cladding layer(103), a hall interrupting layer(104), an active layer(105) and a p-type cladding layer are sequentially formed on a substrate. The hall interrupting layer has at least two layers having different energy band gap, in which the energy band gap is decreased toward the active layer. The hall interrupting layer has a first band gap layer(104a) formed on the n-type cladding layer and a second band gap(104b) formed on the first band gap, in which the second band gap layer has an energy band gap smaller than that of the first band gap layer.
Abstract translation: 提供了一种氮化物半导体发光器件，用于通过消除霍尔中断层和有源层之间的能带间隙来中断足够溢出的门厅。 在衬底上依次形成n型包层（103），门厅中断层（104），有源层（105）和p型覆层。 霍尔中断层具有至少两层具有不同能带隙的层，其中能带隙朝向有源层减小。 霍尔中断层具有形成在n型包覆层上的第一带隙层（104a）和形成在第一带隙上的第二带隙（104b），其中第二带隙层的能带隙小于 第一个带隙层的层。
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公开(公告)号：KR100826389B1
公开(公告)日：2008-05-02
申请号：KR1020060075407
申请日：2006-08-09
Applicant: 삼성전기주식회사
IPC: H01L33/16
CPC classification number: C30B25/04 , C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24
Abstract: 본 발명은, 질화물 반도체층 상에 개구부를 갖는 마스크를 형성하는 단계와, 상기 마스크의 개구부에 노출된 상기 질화물 반도체층 영역에 상기 질화물 반도체층 상면에 대해 경사진 결정면을 갖는 육각 피라미드 구조의 질화물 반도체 결정을 선택적으로 성장시키는 단계를 포함하며, 상기 육각 피라미드 구조의 질화물 반도체 결정은, 그 상하부에 위치한 결정면의 경사각보다 큰 경사각의 결정면을 갖는 적어도 하나의 중간분리영역을 포함하는 질화물 반도체 선택 성장방법을 제공한다.또한, 본 발명은 상기한 질화물 반도체 선택 성장방법을 이용하여 제조될 수 있는 질화물 발광소자와, 그 제조방법을 제공한다.
질화물 결정(nitride crystal), 피라미드(pyramid), 발광다이오드(light emitting diode)-
公开(公告)号：KR100843455B1
公开(公告)日：2008-07-03
申请号：KR1020060080337
申请日：2006-08-24
Applicant: 삼성전기주식회사
IPC: H01L33/22
Abstract: 본 발명은 광추출효율을 향상시킨 질화물 반도체 발광소자 및 제조방법에 관한 것으로, 본 발명에 따른 질화물 반도체 발광소자는, 제1 도전형 질화물 반도체층; 상기 제1 도전형 질화물 반도체층 상에 형성된 활성층; 상기 활성층 상에 형성된 제2 도전형 질화물 반도체층; 및 상기 제2 도전형 질화물 반도체층 상에 형성되며, 상기 제2 도전형 질화물 반도체층 상면에 대해 경사진 결정면을 갖는 복수의 육각 피라미드 질화물 결정체를 포함하는 것을 특징으로 한다.
피라미드, 질화물 결정체, 전반사, 발광, 요철, 광추출Abstract translation: 本发明涉及一种具有改善的光提取效率的氮化物半导体发光器件及其制造方法，并且根据本发明的氮化物半导体发光器件包括：第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层上的有源层; 在有源层上形成的第二导电型氮化物半导体层; 并且多个六角锥氮化物晶体形成在第二导电型氮化物半导体层上并且具有相对于第二导电型氮化物半导体层的上表面倾斜的晶面。
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公开(公告)号：KR100809234B1
公开(公告)日：2008-03-05
申请号：KR1020060078988
申请日：2006-08-21
Applicant: 삼성전기주식회사
IPC: H01L33/02
Abstract: 본 발명은, 제1 도전형 질화물 반도체로 이루어진 기저층 상면에 복수의 윈도우를 갖는 마스크를 형성하는 단계와, 상기 복수의 윈도우에 노출된 상기 기저층 영역 각각에 상기 기저층 상면에 대해 경사진 결정면을 갖는 육각 피라미드 구조의 제1 도전형 질화물 반도체 결정을 선택적으로 성장시키는 단계와, 상기 제1 도전형 질화물 반도체 결정 표면에 활성층 및 제2 도전형 질화물 반도체층을 순차적으로 성장시키는 단계를 포함하며, 상기 마스크는 적어도 2개의 영역을 구분되며, 상기 적어도 2개의 영역에 위치한 윈도우는 각각 서로 다른 크기를 갖도록 형성된 것을 특징으로 하는 질화물 반도체 발광소자 제조방법을 제공한다.
질화물 결정(nitride crystal), 피라미드(pyramid), 발광다이오드(light emitting diode)-
Patent Agency Ranking
公开(公告)号：KR100782740B1
公开(公告)日：2007-12-05
申请号：KR1020060125828
申请日：2006-12-11
Applicant: 삼성전기주식회사
IPC: H01L21/205
CPC classification number: H01L21/67207 , C23C16/46 , H01L21/67011
Abstract: A chemical vapor deposition apparatus is provided to increase the number of loaded substrates without enlarging an external diameter of a substrate fixing unit by using a driving unit for rotating the substrate fixing unit. An external chamber(110) has a first gas line(112) and a gas exhaust unit(114). An arranged hole(116) is formed on a vertical surface of the external chamber. An internal chamber(120) has a second gas line(122) connected to a gas distributing unit(126) and is arranged in the external chamber. The gas distributing unit is formed on a vertical surface corresponding to the arranged hole. A substrate fixing unit(130) is rotatably arranged on the arranged hole. At least one substrate is fixed on the fixing unit. A heating unit(140) is arranged at an external side of the external chamber to provide heat to the substrate fixing unit. A driving unit(150) provides power for rotating the substrate fixing unit to one direction.
Abstract translation: 提供一种化学气相沉积设备，通过使用用于旋转衬底固定单元的驱动单元，不增加衬底固定单元的外径，从而增加加载衬底的数量。 外部室（110）具有第一气体管线（112）和排气单元（114）。 在外部室的垂直表面上形成一个布置的孔（116）。 内室（120）具有连接到气体分配单元（126）并设置在外室中的第二气体管线（122）。 气体分配单元形成在对应于所设置的孔的垂直表面上。 基板固定单元（130）可旋转地布置在所述布置的孔上。 至少一个基板固定在固定单元上。 加热单元（140）布置在外部室的外侧，以向基板固定单元提供热量。 驱动单元（150）提供用于将基板固定单元旋转到一个方向的电力。
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公开(公告)号：KR100755610B1
公开(公告)日：2007-09-06
申请号：KR1020060088250
申请日：2006-09-12
Applicant: 삼성전기주식회사
IPC: H01L33/20
Abstract: A nitride semiconductor light emitting device having a pyramid structure and its fabricating method are provided to obtain easily a p-type nitride semiconductor layer having sufficient hall concentration in a light emitting portion of hexagonal pyramid structure. A p-type nitride semiconductor base layer(102) is formed on a substrate(101). A mask layer(103) having an opening is formed on the p-type nitride semiconductor. A light emitting portion(150) of a hexagonal pyramid structure is grown through the opening of the mask layer. The light emitting portion has a p-type nitride semiconductor crystal of hexagonal pyramid, an active layer(105) and an n-type nitride semiconductor layer.
Abstract translation: 提供具有棱锥体结构的氮化物半导体发光器件及其制造方法，以容易地获得在六角锥体结构的发光部分中具有足够的霍尔浓度的p型氮化物半导体层。 在基板（101）上形成p型氮化物半导体基底层（102）。 在p型氮化物半导体上形成具有开口的掩模层（103）。 通过掩模层的开口生长六角锥形结构的发光部分（150）。 发光部分具有六角锥的p型氮化物半导体晶体，有源层（105）和n型氮化物半导体层。
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公开(公告)号：KR1020080018355A
公开(公告)日：2008-02-28
申请号：KR1020060080337
申请日：2006-08-24
Applicant: 삼성전기주식회사
IPC: H01L33/22
Abstract: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to increase a light extraction efficiency of the light emitted from the top surface of a nitride semiconductor. An active layer(13) is formed on a first conductive nitride semiconductor layer(12), and a second conductive nitride semiconductor layer(14) is formed on the active layer. Plural hexagonal nitride crystals(16) are formed on the second conductive nitride semiconductor layer, and have an inclined crystalline surface to the top surface of the second nitride semiconductor layer. A mask(15) is formed on the second conductive nitride semiconductor layer, and has plural windows at a center region of each nitride crystal.
Abstract translation: 提供氮化物半导体发光器件及其制造方法以提高从氮化物半导体的顶表面发射的光的光提取效率。 在第一导电氮化物半导体层（12）上形成有源层（13），在有源层上形成第二导电氮化物半导体层（14）。 多个六方晶氮化物晶体（16）形成在第二导电氮化物半导体层上，并且具有与第二氮化物半导体层的顶表面相对的倾斜晶体表面。 在第二导电氮化物半导体层上形成掩模（15），并且在每个氮化物晶体的中心区域具有多个窗口。
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公开(公告)号：KR1020080017180A
公开(公告)日：2008-02-26
申请号：KR1020060079001
申请日：2006-08-21
Applicant: 삼성전기주식회사
IPC: H01L33/10
Abstract: A semiconductor light emitting device is provided to focus effectively light and maximize light emitting efficiency by forming a multi-reflection layer having a high refractive index on a lower surface thereof. A semiconductor light emitting device includes a substrate(31) for growing a semiconductor single crystal and a first nitride semiconductor layer, an active layer(35), and a second nitride semiconductor layer(37). A multi-reflection layer(39) is formed by stacking alternately a first layer having a first refractive index and a second layer having a second refractive index. The second refractive index is lower than the first refractive index. A sub-mount(41) is attached on a lower surface of the multi-reflection layer by using an adhesive layer in order to mount a nitride semiconductor light emitting device.
Abstract translation: 提供一种半导体发光器件，用于通过在其下表面上形成具有高折射率的多反射层来有效地聚焦光并使发光效率最大化。 半导体发光器件包括用于生长半导体单晶的衬底（31）和第一氮化物半导体层，有源层（35）和第二氮化物半导体层（37）。 多反射层（39）通过交替堆叠具有第一折射率的第一层和具有第二折射率的第二层而形成。 第二折射率低于第一折射率。 为了安装氮化物半导体发光器件，通过使用粘合层将副安装座（41）安装在多反射层的下表面上。
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公开(公告)号：KR1020080032882A
公开(公告)日：2008-04-16
申请号：KR1020060098964
申请日：2006-10-11
Applicant: 삼성전기주식회사
CPC classification number: H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A light emitting diode package is provided to obtain high optical extraction efficiency by using an electrical insulating transparent fluid instead of a refractive index matching medium. A package substrate(41) includes a mounting area and a first and second wiring structures having exposed parts. The first and second wiring structures are formed in the mounting region. A light emitting diode(45) includes a first and second electrodes and is loaded in the mounting region so that the first and second electrodes are connected to a first and second bonding pads. A transparent member for cover is loaded in the mounting region of the package substrate. An electrical insulating transparent fluid(47) is used for filling a mounting space of the sealed light emitting diode. The electrical insulating transparent fluid has a refractive index smaller than a refractive index of a component of the light emitting diode.
Abstract translation: 提供发光二极管封装以通过使用电绝缘透明流体代替折射率匹配介质来获得高光学提取效率。 封装基板（41）包括安装区域和具有露出部分的第一和第二布线结构。 第一和第二布线结构形成在安装区域中。 发光二极管（45）包括第一和第二电极，并且被装载在安装区域中，使得第一和第二电极连接到第一和第二接合焊盘。 用于盖的透明构件装载在封装基板的安装区域中。 电绝缘透明流体（47）用于填充密封发光二极管的安装空间。 电绝缘透明流体的折射率小于发光二极管的分量的折射率。
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