-
公开(公告)号：KR101141451B1
公开(公告)日：2012-05-04
申请号：KR1020080111888
申请日：2008-11-11
Applicant: 삼성전기주식회사
CPC classification number: G02B26/101
Abstract: 본 발명은 반사미러가 회전 및 틸팅되는 구조를 가져 이동물체의 수평방향뿐만 아니라 수직방향까지 스캔하여 주변의 장애물과의 거리를 검출함으로써 공간적인 데이터의 확보가 가능한 3차원 공간 스캔 장치를 제공한다.
-
公开(公告)号：KR100891800B1
公开(公告)日：2009-04-07
申请号：KR1020070120472
申请日：2007-11-23
Applicant: 삼성전기주식회사
Abstract: A manufacturing method of light emitting diode array and a light emitting diode array are provided to improve the productivity of manufacturing process by suppressing the reliability deterioration of the emitting device. A plurality of grooves are formed on the one side of substrate(100). An insulating layer(120) is formed on the substrate where is exposed to the lateral side of groove and the gap between the grooves. The insulating layer comprises the insulating material in order to electrically separate the discrete emitting device. The first conductivity type semiconductor layer(130), an active layer(140), and the second electrical conduction semiconductor layer(150) are laminated in each groove portion.
Abstract translation: 提供了发光二极管阵列和发光二极管阵列的制造方法，以通过抑制发光装置的可靠性劣化来提高制造工艺的生产率。 在基板（100）的一侧形成有多个槽。 绝缘层（120）形成在基板上，暴露于槽的侧面和槽之间的间隙。 绝缘层包括绝缘材料以便电离分离发射器件。 第一导电类型半导体层（130），有源层（140）和第二导电半导体层（150）层叠在每个沟槽部分中。
-
公开(公告)号：KR1020080018355A
公开(公告)日：2008-02-28
申请号：KR1020060080337
申请日：2006-08-24
Applicant: 삼성전기주식회사
IPC: H01L33/22
Abstract: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to increase a light extraction efficiency of the light emitted from the top surface of a nitride semiconductor. An active layer(13) is formed on a first conductive nitride semiconductor layer(12), and a second conductive nitride semiconductor layer(14) is formed on the active layer. Plural hexagonal nitride crystals(16) are formed on the second conductive nitride semiconductor layer, and have an inclined crystalline surface to the top surface of the second nitride semiconductor layer. A mask(15) is formed on the second conductive nitride semiconductor layer, and has plural windows at a center region of each nitride crystal.
Abstract translation: 提供氮化物半导体发光器件及其制造方法以提高从氮化物半导体的顶表面发射的光的光提取效率。 在第一导电氮化物半导体层（12）上形成有源层（13），在有源层上形成第二导电氮化物半导体层（14）。 多个六方晶氮化物晶体（16）形成在第二导电氮化物半导体层上，并且具有与第二氮化物半导体层的顶表面相对的倾斜晶体表面。 在第二导电氮化物半导体层上形成掩模（15），并且在每个氮化物晶体的中心区域具有多个窗口。
-
公开(公告)号：KR101018144B1
公开(公告)日：2011-02-28
申请号：KR1020080076154
申请日：2008-08-04
Applicant: 삼성전기주식회사
IPC: G01S13/06
Abstract: 본 발명은 반사미러가 회전 및 틸팅되는 구조를 가져 이동물체의 수평방향뿐만 아니라 수직방향까지 스캔하여 주변의 장애물과의 거리를 검출함으로써 공간적인 데이터의 확보를 통해 자율주행이 가능한 자율주행체의 공간 스캔 장치를 제공한다.
Abstract translation: 本发明具有如下结构：通过扫描不仅水平方向而且扫描移动物体的垂直方向来旋转和倾斜反射镜，以便检测与障碍物的距离， 由此提供扫描装置。
-
公开(公告)号：KR100888815B1
公开(公告)日：2009-03-17
申请号：KR1020070103139
申请日：2007-10-12
Applicant: 삼성전기주식회사
CPC classification number: H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: A light emitting diode package capable of obtaining desired light emitting color by converting wavelength with phosphor powder is provided to prevent direct contact of a LED chip and a phosphor powder by forming a micro lens between molding material including the LED chip and the phosphor powder. A lead frame(150) includes a pair of lead terminals. A part of the lead frame is loaded in an inner side of a package(110). The package includes an opened radiation window in order to radiate a light. A LED chip(130) is mounted on the lead frame inside the package. A micro lens surrounds the LED chip. An electrode connection part(140) is made of a conductive adhesive or a bump ball in order to conduct the LED chip and the lead frame. Molding material(200) is filled between an outer part of the micro lens and an inner part of the package, and contains a phosphor powder.
Abstract translation: 提供能够通过用荧光体粉末转换波长获得期望的发光颜色的发光二极管封装，以通过在包括LED芯片和荧光体粉末的成型材料之间形成微透镜来防止LED芯片和荧光体粉末的直接接触。 引线框架（150）包括一对引线端子。 引线框架的一部分装载在封装（110）的内侧。 该包装件包括一个开放的辐射窗口以便辐射光。 LED芯片（130）安装在封装内的引线框架上。 微透镜围绕着LED芯片。 电极连接部分（140）由导电粘合剂或凸块球制成，以便引导LED芯片和引线框架。 成型材料（200）填充在微透镜的外部与封装的内部之间，并含有荧光体粉末。
-
Patent Agency Ranking
公开(公告)号：KR100835717B1
公开(公告)日：2008-06-05
申请号：KR1020060123497
申请日：2006-12-07
Applicant: 삼성전기주식회사
IPC: H01L33/08
Abstract: A nitride semiconductor light emitting device is provided to enable the plural active layers having the different wavelength light respectively to realize the different wavelength light without deterioration of a boundary and film quality. A nitride semiconductor light emitting device comprises a first conductive and a second conductive nitride semiconductor layers(12,17) and a plurality of active regions. Wherein, the active regions are formed between the first and the second nitride semiconductor layers, and emits different wavelength light respectively. The active regions comprises a first active layer, which emits a first wavelength light, and a second active layer which emits a second wavelength light which is longer than the first wavelength light. The first and the second active layers are made up of at least one quantum well layer and a quantum barrier layer which are formed alternately.
Abstract translation: 提供一种氮化物半导体发光器件，用于使得具有不同波长光的多个有源层能够分别实现不同波长的光，而不会使边界和膜质量下降。 氮化物半导体发光器件包括第一导电和第二导电氮化物半导体层（12,17）和多个有源区。 其中，在第一和第二氮化物半导体层之间形成有源区，并分别发射不同的波长的光。 有源区域包括发射第一波长光的第一有源层和发射比第一波长光长的第二波长光的第二有源层。 第一和第二有源层由交替形成的至少一个量子阱层和量子势垒层构成。
-
公开(公告)号：KR1020080032882A
公开(公告)日：2008-04-16
申请号：KR1020060098964
申请日：2006-10-11
Applicant: 삼성전기주식회사
CPC classification number: H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A light emitting diode package is provided to obtain high optical extraction efficiency by using an electrical insulating transparent fluid instead of a refractive index matching medium. A package substrate(41) includes a mounting area and a first and second wiring structures having exposed parts. The first and second wiring structures are formed in the mounting region. A light emitting diode(45) includes a first and second electrodes and is loaded in the mounting region so that the first and second electrodes are connected to a first and second bonding pads. A transparent member for cover is loaded in the mounting region of the package substrate. An electrical insulating transparent fluid(47) is used for filling a mounting space of the sealed light emitting diode. The electrical insulating transparent fluid has a refractive index smaller than a refractive index of a component of the light emitting diode.
Abstract translation: 提供发光二极管封装以通过使用电绝缘透明流体代替折射率匹配介质来获得高光学提取效率。 封装基板（41）包括安装区域和具有露出部分的第一和第二布线结构。 第一和第二布线结构形成在安装区域中。 发光二极管（45）包括第一和第二电极，并且被装载在安装区域中，使得第一和第二电极连接到第一和第二接合焊盘。 用于盖的透明构件装载在封装基板的安装区域中。 电绝缘透明流体（47）用于填充密封发光二极管的安装空间。 电绝缘透明流体的折射率小于发光二极管的分量的折射率。
-
公开(公告)号：KR100818452B1
公开(公告)日：2008-04-01
申请号：KR1020060106792
申请日：2006-10-31
Applicant: 삼성전기주식회사
IPC: H01L33/32
CPC classification number: H01L33/007 , C30B25/18 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262
Abstract: A method for forming a III group nitride semiconductor thin film and a manufacturing a nitride semiconductor device using the same are provided to ensure a continuous nitride growing process by performing a process of inducing a lateral growing mode in a chamber in which nitride is grown. A first nitride single crystal layer is grown on a substrate(21), and then an etching gas is applied on the upper surface(22a) of the first nitride single crystal layer so that plural pits(P) with an inclined surface of nonpolar crystal are formed in a high potential density region. A second nitride single crystal layer is formed on the first nitride single crystal layer by in-situ so that the pits are maintained as voids(V). The step of forming the second nitride single crystal layer includes growing an intermediate layer on the first nitride single crystal layer, and growing the second nitride single crystal layer on the intermediate layer.
Abstract translation: 提供了一种用于形成III族氮化物半导体薄膜的方法和使用该氮化物半导体薄膜的氮化物半导体器件的制造方法，以通过在生长氮化物的室中进行诱导侧向生长模式的过程来确保连续的氮化物生长过程。 在基板（21）上生长第一氮化物单晶层，然后在第一氮化物单晶层的上表面（22a）上施加蚀刻气体，使得具有非极性晶体的倾斜表面的多个凹坑（P） 形成在高电位密度区域。 第二氮化物单晶层通过原位形成在第一氮化物单晶层上，使得凹坑保持为空隙（V）。 形成第二氮化物单晶层的步骤包括在第一氮化物单晶层上生长中间层，并在中间层上生长第二氮化物单晶层。
-
公开(公告)号：KR100809226B1
公开(公告)日：2008-02-29
申请号：KR1020060096180
申请日：2006-09-29
Applicant: 삼성전기주식회사
IPC: H01L33/06
CPC classification number: H01L33/0075 , B82Y20/00 , H01L33/0079 , H01S5/3054 , H01S5/3072 , H01S5/34333
Abstract: A nitride semiconductor light emitting device is provided to prevent dopant atoms from being transferred to an active layer and enable a heat treatment at a high temperature not lower than 950 °C by growing a p-type nitride semiconductor layer before the active layer is formed. A p-type nitride semiconductor layer(22) is formed on a nitride single crystal growing substrate(21) of an electrical conductivity type. An active layer(23) is formed on the p-type nitride semiconductor layer wherein a plurality of quantum barrier layers and a plurality of quantum well layers are alternately stacked in the active layer. An n-type nitride semiconductor layer(24) is formed on the active layer. A p-side electrode and an n-side electrode are respectively formed on the lower surface of the nitride single crystal growing substrate and the upper surface of the n-type nitride semiconductor layer. The p-type nitride semiconductor layer can include a p-type AlGaN layer that is formed on the substrate to have an interface in contact with the active layer.
Abstract translation: 提供氮化物半导体发光器件，以防止掺杂剂原子转移到有源层，并且在形成有源层之前通过生长p型氮化物半导体层，能够在不低于950℃的高温下进行热处理。 在导电型的氮化物单晶生长衬底（21）上形成p型氮化物半导体层（22）。 在p型氮化物半导体层上形成有源层（23），其中多个量子势垒层和多个量子阱层在有源层中交替堆叠。 在有源层上形成n型氮化物半导体层（24）。 p侧电极和n侧电极分别形成在氮化物单晶生长衬底的下表面和n型氮化物半导体层的上表面上。 p型氮化物半导体层可以包括形成在衬底上以具有与有源层接触的界面的p型AlGaN层。
-
公开(公告)号：KR100809215B1
公开(公告)日：2008-02-29
申请号：KR1020060115247
申请日：2006-11-21
Applicant: 삼성전기주식회사
IPC: H01L33/06
Abstract: A nitride semiconductor light emitting device is provided to prevent the low light emitting efficiency and nonuniform light distribution of a part of a plurality of active layers by making at least a part of a plurality of active layers have a super lattice structure having a thickness that holes can tunnel. A plurality of active layers include p-type and n-type nitride semiconductor layers(27,22), at least one quantum barrier layer(25) and at least one quantum well layer wherein the quantum barrier layer and the quantum well layer are sequentially and alternately formed between the p-type and n-type nitride semiconductor layers and have mutually different light emitting wavelengths. The plurality of active layers include a first active layer(26) emitting at least a first wavelength light and a second active layer(24) emitting a second wavelength light having a longer wavelength than that of the first wavelength light. The quantum barrier layer and the quantum well layer are made of a super lattice structure having a thickness that injected holes can tunnel. The second active layer can be disposed nearer to the n-type nitride semiconductor layer than the first active layer.
Abstract translation: 提供一种氮化物半导体发光器件，用于通过使多个有源层的至少一部分具有超晶格结构，以防止多个有源层的一部分的低发光效率和不均匀的光分布， 可以隧道。 多个有源层包括p型和n型氮化物半导体层（27,22），至少一个量子势垒层（25）和至少一个量子阱层，其中量子势垒层和量子阱层顺序地 并且交替地形成在p型和n型氮化物半导体层之间并且具有相互不同的发光波长。 多个有源层包括发射至少第一波长光的第一有源层（26）和发射具有比第一波长光的波长长的波长的第二波长光的第二有源层（24）。 量子势垒层和量子阱层由具有注入孔可以隧道的厚度的超晶格结构制成。 第二有源层可以布置成比第一有源层更靠近n型氮化物半导体层。
-
-
-
-
-
-
-
-
-
Search Results
37
records
(took 0.022 seconds)
