公开(公告)号：KR1020050015495A

公开(公告)日：2005-02-21

申请号：KR1020030054341

申请日：2003-08-06

Applicant: 삼성전자주식회사

Inventor： 김경우

IPC: H01L21/304

Abstract: PURPOSE: A conditioner of chemical mechanical polishing device is provided to improve polishing efficiency by maintaining constantly a difference between a falling distance value of a conditioner ring and a distance value of the conditioner ring from a polishing pad. CONSTITUTION: A holder shaft(630) is elevated from a lower side of a carrier housing by air pressure. A sustain ring(640) is connected to the holder shaft in order to absorb a wafer or attach the wafer to a polishing pad. The sustain ring is used for covering an outside of a wafer attachment unit. A conditioner ring(650) is elevated at the outside of the wafer by the air pressure. A falling distance of the conditioner ring is large as much as 0.2 to 0.4mm in comparison with the conditioner ring and the polishing pad under a wafer polishing process condition.

Abstract translation: 目的：提供一种化学机械抛光装置的护发素，以通过将调节环的下落距离值与调节环的距离值与抛光垫保持恒定的差异来提高抛光效率。 构成：保持器轴（630）通过空气压力从载体壳体的下侧升高。 维持环（640）连接到保持器轴以吸收晶片或将晶片附着到抛光垫。 维持环用于覆盖晶片附接单元的外部。 调节环（650）在空气压力下在晶片的外部升高。 与晶片抛光工艺条件下的调节环和抛光垫相比，调节环的下落距离大达0.2至0.4mm。

公开(公告)号：KR1020030075912A

公开(公告)日：2003-09-26

申请号：KR1020020015392

申请日：2002-03-21

Applicant: 삼성전자주식회사

Inventor： 김경우 ,  양유신

IPC: H01L21/304

CPC classification number: B24B37/205 ,  B24B37/013 ,  B24B49/12 ,  B24D7/12 ,  G01B11/0625 ,  G01B11/0683

Abstract: PURPOSE: A CMP(Chemical Mechanical Polishing) apparatus and a method for controlling the same are provided to be capable of accurately measuring the thickness of a polish object layer by using a single end point detector and being easily used at a conventional equipment by simply modifying the software of the conventional equipment. CONSTITUTION: A CMP apparatus is provided with a storage part(180) including a table having the data of the quantity of light detected at an end point according to the initial thickness corresponding to the polishing process recipe of a polish object layer of a semiconductor wafer, an input part(190) for inputting the polishing process recipe of the polish object layer, an end point detector(150) for detecting the quantity of light reflected from the polish object layer by irradiating light to the semiconductor wafer, and a controller(160) for controlling a polishing process.

Abstract translation: 目的：提供CMP（化学机械抛光）装置及其控制方法，以能够通过使用单个端点检测器精确地测量抛光对象层的厚度，并且可以通过简单地修改在常规设备中容易地使用 常规设备的软件。 构成：CMP装置设有存储部分（180），该存储部分包括具有根据与半导体晶片的抛光对象层的抛光处理配方相对应的初始厚度在端点处检测到的光量的数据的工作台 ，用于输入抛光对象层的抛光处理配方的输入部（190），用于通过向半导体晶片照射光检测从抛光对象层反射的光量的端点检测器（150），以及控制器 160），用于控制抛光过程。

公开(公告)号：KR101829278B1

公开(公告)日：2018-02-19

申请号：KR1020110086505

申请日：2011-08-29

Applicant: 삼성전자주식회사

Inventor： 정무경 ,  정노영 ,  김경우

IPC: H01L27/11 ,  H01L21/8244 ,  H01L21/265

CPC classification number: H01L21/823412 ,  H01L21/76237 ,  H01L21/76895 ,  H01L21/823418 ,  H01L21/823475 ,  H01L27/1104 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

Abstract: 반도체장치는기판, 상기기판상에형성되고, 서로이격되어배치되는다수의폴리실리콘부분, 상기다수의폴리실리콘부분중 인접한폴리실리콘부분사이의상기기판내에형성되는다수의소오스 / 드레인영역, 상기다수의폴리실리콘부분과상기다수의소오스 / 드레인영역상에형성된유전체층을포함하고, 상기유전체층은전도성물질로채워진캐비티를포함하여컨택영역을형성하고, 상기컨택영역은상기다수의소오스 / 드레인영역중 하나의소오스 / 드레인영역의일부및 상기인접한폴리실리콘부분중 하나의폴리실리콘부분의일부와오버랩되어, 상기하나의폴리실리콘부분과상기하나의소오소 / 드레인영역을전기적으로연결하고, 상기컨택영역의일부는상기기판의상부표면아래로연장되어, 상기하나의소오스 / 드레인영역과동일하게도핑된임플란트영역에접촉한다. 상기임플란트영역은상기하나의소오스 / 드레인영역의옆에위치하고, 상기하나의폴리실리콘부분의아래의상기기판내에위치한채널영역의일부를포함한다.

Abstract translation: 该半导体器件包括：基板;形成在所述基板上，多个多晶硅部分的彼此分开设置，所述多个形成在所述多个多晶硅部分中的相邻多晶硅部分之间的衬底的源/漏区，其中所述多个 聚，它包括形成在所述多个源极/漏极区和所述硅部分的介电层，介电层形成包括填充有导电材料的腔的接触区域，所述接触区域为多个的源极/漏极区之一 接触区的漏区和相邻多晶硅部分之一的多晶硅部分的一部分，以电连接一个多晶硅部分和一个源/ 一部分在衬底的顶表面下方延伸并且与一个源极/漏极区域接触相同的掺杂注入区域 。 注入区域位于一个源极/漏极区域旁边并且包括位于一个多晶硅部分下面的衬底内的沟道区域的一部分。