公开(公告)号：KR100718142B1

公开(公告)日：2007-05-14

申请号：KR1020050117225

申请日：2005-12-02

Applicant: 삼성전자주식회사

Inventor： 문창욱 ,  이상목 ,  유인경 ,  이승운 ,  부림 ,  이은홍 ,  조중래

IPC: H01L27/108 ,  B82Y10/00

Abstract: A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.

Abstract translation: 提供了具有金属 - 绝缘体 - 金属结构的存储节点，包括具有金属 - 绝缘体 - 金属（MIM）结构的存储节点的非易失性存储器件及其操作方法。 存储器件可以包括开关元件和连接到开关元件的存储节点。 存储节点可以包括依次堆叠的第一金属层，第一绝缘层和第二金属层以及纳米结构层。 存储节点可以进一步包括第二绝缘层和第三金属层。 用作碳纳米结构层的纳米结构层可以包括至少一个富勒烯层。