公开(公告)号：KR1020130081953A

公开(公告)日：2013-07-18

申请号：KR1020120003082

申请日：2012-01-10

Applicant: 삼성전자주식회사

Inventor： 이하라히사노리 ,  문창록

IPC: H01L27/146

CPC classification number: H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14647 ,  H01L27/14689

Abstract: PURPOSE: An image sensor is provided to improve sensitivity by increasing full well capacity in a photo diode area within a fine unit pixel. CONSTITUTION: An element separation area defines an active area in a unit pixel on a substrate. A vertical gate unit (120V) is extended along with a depth direction of the substrate from an upper surface of the substrate within the active area. A transfer transistor (Tx) contains a channel area. Multiple photodiode areas (PD1,PD2) are formed in a position with different thickness from the upper surface of the substrate within the active area. At least one color control path area (150) provides a electron transferred pass between more than two photodiode areas.

Abstract translation: 目的：提供一个图像传感器，通过增加精细单位像素内的光电二极管区域的全部阱容量来提高灵敏度。 构成：元件分离区域定义衬底上单位像素中的有效区域。 垂直栅极单元（120V）沿着衬底的深度方向从有源区域内的衬底的上表面延伸。 传输晶体管（Tx）包含沟道区域。 多个光电二极管区域（PD1，PD2）形成在与有源区域内的衬底的上表面不同厚度的位置。 至少一个颜色控制路径区域（150）在多于两个的光电二极管区域之间提供电子传递的通过。