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公开(公告)号：KR101867488B1
公开(公告)日：2018-06-14
申请号：KR1020120003082
申请日：2012-01-10
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/14647 , H01L27/14689
Abstract: 칼라조정경로영역을가지는이미지센서를개시한다. 이미지센서는기판의활성영역내에서기판의깊이방향을따라연장되는수직게이트부를포함하는트랜스퍼트랜지스터와, 활성영역내에서기판의상면으로부터의깊이가서로다른위치에형성되어있는복수의포토다이오드영역과, 복수의포토다이오드영역중 적어도 2 개의포토다이오드영역사이에연장되어전자이동경로를제공하는적어도 1 개의칼라조정경로영역을포함한다.
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公开(公告)号：KR101850540B1
公开(公告)日：2018-04-20
申请号：KR1020100099823
申请日：2010-10-13
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H04N5/225
CPC classification number: H01L27/14636 , H01L27/14603 , H01L27/14618 , H01L27/1464 , H01L27/14645 , H01L27/14689 , H01L2224/13 , H04N5/2253 , H04N5/2254
Abstract: 지지기판상에포토다이오드를갖는반도체기판이제공된다. 상기지지기판및 상기반도체기판사이에절연층이배치된다. 상기절연층 내에제1 도전성패턴이배치된다. 상기지지기판을관통하여상기제1 도전성패턴에접촉된제1 관통전극이제공된다.
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公开(公告)号：KR101770289B1
公开(公告)日：2017-08-23
申请号：KR1020100094615
申请日：2010-09-29
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14689 , H01L27/14609 , H01L27/1463
Abstract: 이미지센서및 이의형성방법을제공한다. 이이미지센서는포텐셜베리어영역을포함하여화소간의크로스토크를방지할수 있다. 이의제조방법은소자분리막을형성하기전에트렌치를채우는절연막상에마스크패턴을형성하고이를이온주입마스크로이용하여이온주입공정을진행하여트렌치하부에포텐셜베리어영역을형성한다. 이로써소자분리막의손상을최소화할수 있다.
Abstract translation: 提供了一种图像传感器及其形成方法。 该图像传感器可以包括势垒区域以防止像素之间的串扰。 在该方法中，在形成器件隔离膜之前，在填充沟槽的绝缘膜上形成掩模图案，并且使用掩模图案作为离子注入掩模进行离子注入工艺，以在沟槽下方形成势垒区域。 这可以最大限度地减少对器件隔离膜的损坏。
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公开(公告)号：KR1020160078613A
公开(公告)日：2016-07-05
申请号：KR1020140188109
申请日：2014-12-24
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/1463 , H01L27/14689 , H01L27/146 , H01L27/14601
Abstract: 이미지센서가제공된다. 이미지센서는반도체기판; 상기반도체기판내에배치되어상기반도체기판의활성영역을정의하되, 상기활성영역은서로이격하는제1 및제2 영역들, 및상기제1 및제2 영역들사이의제3 영역을포함하는, 소자분리막; 상기반도체기판에형성되며, 상기제1 영역에서상기제3 영역으로연장되는트렌치; 상기제3 영역내의상기트렌치에배치된게이트전극; 상기제1 영역에배치되며, 상기트렌치와수직적으로중첩되는광전변환부; 및상기제2 영역에배치된부유확산영역을포함한다.
Abstract translation: 提供图像传感器。 图像传感器包括半导体衬底; 包括的器件隔离层被布置在半导体衬底中并限定限定第一和第二区域的半导体衬底的有源区和在第一和第二区之间的第三区; 沟槽，其形成在所述半导体衬底中并从所述第一区域延伸到所述第三区域; 布置在第三区域的沟槽中的栅电极; 光电转换部，其布置在所述第一区域中并与所述沟槽垂直重叠; 以及布置在第二区域中的浮动扩散区域。 因此，可以提高图像传感器的全部容量。
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公开(公告)号：KR101571353B1
公开(公告)日：2015-11-24
申请号：KR1020090012516
申请日：2009-02-16
Applicant: 삼성전자주식회사
IPC: H01L27/146
Abstract: 이미지센서및 그제조방법이제공된다. 이미지센서는기판, 상기기판의전면(frontside)에형성된제1 금속배선을포함하는절연구조체, 상기기판을관통하여상기제1 금속배선을노출시키는콘택홀, 상기콘택홀의측벽에상기제1 금속배선과연결되어형성된도전스페이서및 상기기판의후면(backside)에형성되어상기제1 금속배선과전기적으로연결된패드를포함한다.
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Patent Agency Ranking
公开(公告)号：KR101550435B1
公开(公告)日：2015-09-04
申请号：KR1020090003100
申请日：2009-01-14
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H01L27/148
CPC classification number: H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/1464
Abstract: 본발명은후면수광이미지센서및 그제조방법에관한것으로, 이후면수광이미지센서는빛이입사되는반도체기판의후면과그 하부의칼라필터사이에후면층간절연막패턴이형성되며, 상기컬러필터의가장자리상에서상기후면층간절연막패턴내에갭 영역이나보이드와같은빈 공간이존재하도록형성되어, 이러한빈 공간의굴절률과상기빈공간주변의후면층간절연막과의굴절률의차이에의해, 빛이이웃하는화소로입사하는것을방지할수 있다. 이로써크로스토크를방지할수 있다.
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公开(公告)号：KR1020130099425A
公开(公告)日：2013-09-06
申请号：KR1020120020926
申请日：2012-02-29
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H04N5/335
CPC classification number: H01L27/14636 , H01L27/1464 , H01L27/14689
Abstract: PURPOSE: An image sensor is provided to implement a simple wire structure by forming wire structure parts on a first surface that is the front side of a first substrate and a second surface that is the rear side of the first substrate. CONSTITUTION: A first interlayer dielectric structure part is formed on a first surface (101a) that is the front side of a first substrate (100a). A first wire structure part is included in the first interlayer dielectric structure part. A via contact plug is electrically connected to the first wire structure part via the first substrate. A color filter (154) and a microlens (156) are laminated on the first area of the second surface of the first substrate. A second interlayer dielectric structure part is formed on the second area of the second surface of the first substrate. A second wire structure part is electrically connected to the via contact plug.
Abstract translation: 目的：提供图像传感器以通过在作为第一基板的前侧的第一表面和作为第一基板的后侧的第二表面上形成线结构部件来实现简单的线结构。 构成：在作为第一基板（100a）的前侧的第一表面（101a）上形成第一层间介电结构部分。 第一线结构部分包括在第一层间介电结构部分中。 通孔接触插头经由第一基板电连接到第一线结构部件。 滤色器（154）和微透镜（156）层叠在第一基板的第二表面的第一区域上。 在第一衬底的第二表面的第二区域上形成第二层间电介质结构部分。 第二线结构部分电连接到通孔接触插塞。
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公开(公告)号：KR1020120033027A
公开(公告)日：2012-04-06
申请号：KR1020100094615
申请日：2010-09-29
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14689 , H01L27/14609 , H01L27/1463 , H01L27/14612
Abstract: PURPOSE: An image sensor and a formation method thereof are provided to minimize damage of a device separation film by forming a potential barrier region on the lower part of a trench using a mask pattern as an ion injection mask. CONSTITUTION: A buffer film(102) and a first insulating film(104) are successively formed on a semiconductor epitaxial layer(100). A trench is formed by patterning a predetermined part of the semiconductor epitaxial layer and the first insulating film. A buried insulating film(108) which fills the trench is formed on the first insulating film. A second insulating film(110) is formed on the buried insulating film. A first mask pattern(112) is formed on the second insulating film.
Abstract translation: 目的：提供一种图像传感器及其形成方法，以通过使用掩模图案作为离子注入掩模在沟槽的下部上形成势垒区域来最小化器件分离膜的损伤。 构成：在半导体外延层（100）上依次形成缓冲膜（102）和第一绝缘膜（104）。 通过图案化半导体外延层和第一绝缘膜的预定部分来形成沟槽。 在第一绝缘膜上形成填充沟槽的掩埋绝缘膜（108）。 在绝缘膜上形成第二绝缘膜（110）。 在第二绝缘膜上形成第一掩模图案（112）。
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公开(公告)号：KR100874954B1
公开(公告)日：2008-12-19
申请号：KR1020060121671
申请日：2006-12-04
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14627 , H01L27/14621 , H01L27/1464 , H01L27/14685 , H01L31/02165
Abstract: A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.
Abstract translation: 背照式图像传感器可以包括其中设置有光电二极管的基板; 衬底的第一表面上的绝缘层; 绝缘层中的互连层; 在衬底和绝缘层之间的抗反射层; 在所述基板的与所述第一表面相对的第二表面上的多个滤色器; 以及彩色滤光片上的微透镜。 因为抗反射层可以在基板和层间电介质层之间，所以穿过基板并到达基板和层间绝缘层之间的界面的光的反射率可以降低。
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10.发明公开
公开(公告)号：KR1020070063852A
公开(公告)日：2007-06-20
申请号：KR1020050124112
申请日：2005-12-15
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14689 , H01L27/1463 , H01L27/14643
Abstract: A semiconductor device, a CMOS image sensor, a method for manufacturing the semiconductor device and a method for manufacturing the CMOS image sensor are provided to reduce remarkably the generation of dark current and noises due to interfacial defects of a trench by forming a channel stop doped region along an inner wall of the trench. A trench for defining a photodiode active region is formed in a substrate(100'). A channel stop doped region(106) is formed along an inner surface of the trench by performing an ion implantation on the resultant structure. A trench isolation region is formed by performing a gap-fill process on the trench using an insulating layer. A photodiode(140,150) is formed within the photodiode active region of the substrate.
Abstract translation: 提供半导体器件，CMOS图像传感器，半导体器件的制造方法以及CMOS图像传感器的制造方法，以通过形成沟道阻挡掺杂来显着地减少由沟槽界面缺陷引起的暗电流和噪声的产生 区域沿着沟槽的内壁。 在衬底（100'）中形成用于限定光电二极管有源区的沟槽。 通过在所得结构上进行离子注入，沿着沟槽的内表面形成通道阻挡掺杂区域（106）。 通过使用绝缘层对沟槽进行间隙填充处理来形成沟槽隔离区域。 光电二极管（140,150）形成在衬底的光电二极管有源区域内。
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