Abstract:
A unit pixel of an image sensor is disclosed. According to the embodiment of the present invention, the unit pixel of an image sensor includes a photoelectric conversation device generating photo charges changes according to the intensity of incident light, a transfer transistor transferring the charges changes to a floating diffusion according to a transfer control signal, and a sufflement transistor connected to the floating diffusion and the transfer transistor transferring the charges changes to the floating diffusion. According to the embodiment, the area of unit pixel is minimized by one transistor except the transfer transistor, the resolution of a pixel array is improved, and the power consumption is reduced.
Abstract:
PURPOSE: A wide-band gap material layer based photodiode element, a back side illumination CMOS(Complementary Metal Oxide Semiconductor) image sensor including the same, and a solar battery are provided to improve electricity formation performance by improving light receiving efficiency of blue light. CONSTITUTION: A photodiode element comprises a photodiode and a wide-band gap material layer(130). The wide-band gap material layer is composed of a material in which an absorption coefficient about blue light is low. A semiconductor substrate has a first surface and a second surface. A metal wiring layer is formed on the first surface of the semiconductor substrate. An anti-reflective layer(150) is formed on the wide-band gap and prevents reflection of light. A color filter is formed on the anti-reflective layer. A micro-lens is formed on the color filter.
Abstract:
본 발명의 실시예에 따른 이미지 센서의 동작 방법은 상기 이미지 센서가 각각이 입사광에 따라 생성되는 광전하를 축적하는 포토 다이오드를 포함하는 복수의 픽셀들을 포함하고, 접지 단자에 제1 레벨을 갖는 벌크 제어 신호를 인가하여 상기 포토 다이오드의 포텐셜(potential)을 변경하는 단계, 상기 포토 다이오드에 축적된 광전하를 플로팅 디퓨젼 노드로 전송하는 단계 및 상기 플로팅 디퓨젼 노드의 포텐셜에 따른 픽셀 신호를 생성하는 단계를 포함하며, 상기 제1 레벨은 0 V가 아닌 레벨이다.
Abstract:
PURPOSE: An image sensor is provided to improve the transfer speed of signal charge by forming a transfer transistor to have a surface channel, a side channel, and a buried channel. CONSTITUTION: In an image sensor, a deep well is provided in a semiconductor substrate(10). An element isolation region(15) includes an element isolation film made of an insulating material and also includes an element isolation impurity region. A photoelectric conversion unit is provided in the active region of the semiconductor substrate. A first photoelectric conversion unit(23) includes a first N-type impurity area(22). A second photoelectric conversion unit includes a second N-type impurity region(25).