Abstract:
PURPOSE: A method for managing an erasure count in a memory device is provided to implement an abrasion leveling technique by efficiently managing the number of erasures. CONSTITUTION: In a managing an erasure count in a memory device, a command interface logic comprises a plurality of control signals and an input output pin. A controller and a VCC generator(240) generate a voltage. The controller and the VCC generator generate a ready/busy bar signal. An address register(210) generates a row signal and a column signal. The address register selects the cell of a memory array(100). A page buffer(260) is interfaced with the memory array. A counter(290) increases an erasure count value.
Abstract:
PURPOSE: A terminal for reducing a delay of a streaming service, a seed server, and a tracker server are provided to shorten delay time in a P2P streaming service. CONSTITUTION: A message generating unit(2027) generates a peer report message including distance information from a seed server and a network subscription request message. A message transmitting unit(2029) transmits the subscription request message to the seed server. The message transmitting unit transmits the peer report message to a tracker server which manages the seed server or a network. A message receiving unit(2028) receives and processes a subscription response message including pre-set limit distance information about the network form the seed server.
Abstract:
PURPOSE: A method and an apparatus for encoding/decoding an image using adaptive distribution adjustment of differential values are provided to encode and decode an image processing unit including pixel values of n bits. CONSTITUTION: A different value adjusting unit(130) adds offset to different values. The different value adjusting unit generates the third image processing unit including different values of n bits in which distribution is adjusted. An image dividing unit(140) divides the third image processing unit according to a bit number, m, determined based on the offset. The third image processing unit is divided into image planes about a lower m bit and an upper n-m bit. An entropy encoding unit(150) entropy-encodes image planes generated by using different entropy encoding methods.
Abstract:
A method for recovering an A/V session and a control point for the same are provided to conveniently recover the A/V session if playback is abnormally terminated by an error generated in the A/V session. The control point includes an information collecting module(1120) collecting A/V session information and a recovering module(1170) controlling recovery of the A/V session based on the collected A/V session information if the error occurs in the A/V session. The A/V session includes at least one of an ID of a media renderer and a media server forming the A/V session, a URI(Uniform Resource Identifier) of the contents played by the A/V session, and content playback information. If an event message is received from the media renderer forming the A/V session, the information collecting module obtains the A/V session information from the event message. The recovering module requests the media renderer confirmed by the A/V session information to play the contents identified by the URI from a content playback position based on the obtained A/V session information.
Abstract:
PURPOSE: A method for manufacturing a semiconductor device to improve an insulating characteristic is provided to minimize a diffusion of carbon atoms included in an interlayer dielectric by using an insulating layer having a superior diffusion blocking characteristic as a blocking layer. CONSTITUTION: In a method for selectively forming a metal silicide layer(60) in a region except a cell array region(100) by using a silicide blocking layer, a nitride layer(50) is formed as the silicide blocking layer in the cell array region. A diffusion of a plurality of carbon atoms or hydrogen atoms included in an interlayer dielectric(70) is blocked when the interlayer dielectric is formed.
Abstract:
본 발명은 게이트 산화막의 신뢰성 저하를 방지하는 반도체 장치의 소자 격리막 형성 방법 및 그 구조에 관한 것으로, 반도체 기판 상에 엑티브 영역과 소자 격리 영역을 정의하여 PSL 소자 격리막을 형성한다. 그리고, 상기 소자 격리막의 상부 돌출 부위의 양측벽에 엑티브 리세스 방지용 폴리 스페이서를 형성한다. 상기 폴리 스페이서를 포함하여 상기 반도체 기판을 산화시켜 희생 산화막을 형성한 후, 상기 희생 산화막 및 소자 격리막을 에치 백 공정으로 식각 하여 상기 소자 격리막의 상부 표면을 평탄화 시키는 단계를 포함한다. 이때, 상기 소자 격리막의 상부의 폭이 그 하부의 폭 보다 상대적으로 넓다. 이와 같은 반도체 장치의 소자 격리막 형성 방법 및 그 구조에 의해서, 엑티브 리세스 방지용 폴리 스페이서를 사용하여 엑티브 영역과 소자 격리 영역 경계 부분의 소자 격리막의 에치 백 식각 마진을 증가시킬 수 있고, 따라서 엑티브 리세스를 방지할 수 있으며, 게이트 산화막의 신뢰성 저하를 방지할 수 있다.