Abstract:
본 명세서에서는 ZnO 나노선을 이용한 UV 센서 제조 방법 및 UV 센서를 제공한다. 본 명세서의 일 실시예에 따른 ZnO 나노선을 이용한 UV 센서 제조 방법은 기판에 나노선 FET 소자를 형성하는 단계, 상기 소자에서 형성된 나노선에 Ti 나노 입자를 형성하는 단계, 및 상기 Ti 나노입자를 열공정으로 산화시켜 TiO 2 나노입자를 상기 나노선의 표면에 코팅시키는 단계를 포함한다.
Abstract:
PURPOSE: A composite material for a gas sensor and a manufacturing method thereof are provided to have the sensitivity for a gas sensor and reactivity improved by multiplying an surface area because a macro inorganic material is mixed with a detecting material for the gas sensor based on a conducting polymer and metallic oxide. CONSTITUTION: A composite material for a gas sensor(100) comprises a gas sensor detecting material(120) and a macro inorganic material(110). The macro inorganic material is distributed on the surface or inside of the detecting material. The macro inorganic material is one or more among the zirconia, and the alumina and Muscovitum. An average diameter of the macro inorganic material is 1 to 100um and an average diameter of the detecting material is 1 to 100nm.
Abstract:
본발명의방법에따라제조된금속산화물나노선 FET 센서는, 금속산화물나노선과게이트산화물사이에나노선의아래쪽절반부분만추가적인유기물게이트로코팅되어있고나노선의위쪽절반부분은센싱부분으로남게되는구조를갖는다. 따라서본 발명의금속산화물나노선 FET 센서는백게이트산화물과금속산화물나노선사이의접촉향상에따른전기적특성및 FET 특성이향상되어센서감지도및 성능을향상시킬수 있다.
Abstract:
PURPOSE: A method for manufacturing a solar cell device is provided to simplify a manufacturing process using a nano-structure which is formed by an electrochemical etching process. CONSTITUTION: A first electrode(102) is formed on a silicon substrate(104). A nano-structure(112) including a plurality of rods is formed on the surface of the silicon substrate. An n-type silicon layer(106) is formed on the surface of the silicon substrate. A transparent conductive film(108) is formed on the n-type silicon layer. A second electrode(110) is formed on the transparent conductive film.
Abstract:
A polymer dispersed LCD simplifying a manufacturing process is provided to apply the various forms of devices by forming point electrodes capable of contacting electrical is to the outside on a lower plate into the constant interval. A counter electrode is formed through coating on the lower surface of an upper substrate. A pixel electrode(21) is formed through coating on the upper surface of a lower substrate(20). The pixel electrode electrically connected a plurality of point electrodes(22) are formed with the constant interval. A polymer dispersed liquid crystal layer is formed between the upper plate and lower plate. A driving circuit electrode for the electrical connection with the point electrode is formed on a driving circuit board.
Abstract:
A prepolymer composition for a polymer dispersed liquid crystal composite membrane, and a polymer dispersed liquid crystal composite membrane prepared by using the composition are provided to control a crosslinking density and a degree of polymerization, thereby reducing drive voltage and increasing contrast ratio. A prepolymer composition comprises 0.1-20 wt% of a multifunctional resin; 0.1-99 wt% of a diluent; 0.1-99 wt% of a crosslinking agent; and 0.1-99 wt% of a photoinitiator, wherein the multifunctional resin is an acrylate derivative compound having at least two functional groups; the diluent is at least one selected from an alkyl acrylate; the crosslinking agent is at least one selected from 1,6-hexanediol diacrylate and 1,6-hexanediol divinyl acrylate; and the photoinitiator is at least one selected from 2-hydroxy-2-methyl-1-phenylpropan-1-one and 2,4,6-trimethylbenzoyl diphenyl phosphine oxide.
Abstract:
본발명은기공을포함하는금속산화물광전극의제조방법, 이에따라제조되는금속산화물광전극및 이를포함하는페로브스카이트태양전지에관한것으로써, 상세하게는금속산화물나노입자와기공형성제를혼합하여광전극재료를제조하는단계(단계 1); 상기단계 1에서제조된광전극재료를페로브스카이트태양전지의차단층상부에코팅하는단계(단계 2); 및상기단계 2에서코팅된광전극재료를가열하여상기기공형성제를제거하는단계(단계 3);를포함하는, 기공을포함하는금속산화물광전극의제조방법을제공한다. 본발명의제조방법은기공을포함하는금속산화물광전극을제조할수 있으며, 본발명에따라제조되는금속산화물광전극은기존의금속산화물광전극과비교하여높은기공율을나타낼수 있다. 이에따라, 광산란효과로인하여입사광의광흡수율을향상시킬수 있어궁극적으로는페로브스카이트태양전지의효율을더욱향상시킬수 있다. 또한, 금속산화물광전극의높은기공율로인하여페로브스카이트광흡수층의침투가용이하게하여, 광전극과광흡수층간의계면접촉을향상시킬수 있어, 이를통해서도페로브스카이트태양전지의효율을높일수 있다.
Abstract:
The present invention relates to a high-efficiency dye-sensitized solar cell including a three-dimensional photonic crystal structure and a manufacturing method thereof. More specifically, the solar cell includes: a substrate; an anode unit in which a transparent electrode and a dye activation layer are stacked in order; a cathode unit in which a three-dimensional photonic crystal structure layer having an inverse opal structure, a substrate, a transparent electrode, and a counter electrode are stacked in order; and electrolyte which is filled in the space between the anode unit and the cathode unit. According to the present invention, the high-efficiency dye-sensitized solar cell including a three-dimensional photonic crystal structure is able to improve harvesting efficiency of light emitted into the solar cell by including a three-dimensional photonic crystal structure capable of total reflection and accordingly improve photoelectric conversion efficiency. Furthermore, since the provided solar cell includes the three-dimensional photonic crystal structure while not having impact on the motion balance of the dye-sensitized solar cell, for example, charge separation and re-combination, the present invention is able to prevent reduction of short-circuit current (Jsc) or open-circuit voltage (Voc) due to the composition change of the dye-sensitized solar cell, thereby further improving the photoelectric conversion efficiency.