公开(公告)号：KR1020080071653A

公开(公告)日：2008-08-05

申请号：KR1020070009755

申请日：2007-01-31

Applicant: 재단법인서울대학교산학협력재단

Inventor： 장경철 ,  서광석

IPC: H01L21/302 ,  H01L21/336

CPC classification number: H01L29/66477 ,  H01L21/0272

Abstract: A method of forming a multiple gate using a metal lift-off process is provided to reduce a manufacturing time and a manufacturing cost of a semiconductor device by decreasing an inter-gate distance in the multiple gate. A polymer layer is formed on a substrate(300) and the polymer layer is patterned. An isotropy etching process is performed on an exposed substrate. Metal layers(340,350) are formed on the substrate. The polymer layer and the metal layer, which is formed on the polymer layer, are removed. A thickness of the polymer layer lies between 100 and 500 nm. The polymer is a photoresist. The polymer layer is patterned by using a photolithography process or an electron beam lithography process.

Abstract translation: 提供了使用金属剥离工艺形成多栅极的方法，以通过减小多栅极中的栅极间距来减少半导体器件的制造时间和制造成本。 在基板（300）上形成聚合物层，并且对聚合物层进行图案化。 在曝光的基板上执行各向同性蚀刻工艺。 金属层（340,350）形成在基板上。 除去形成在聚合物层上的聚合物层和金属层。 聚合物层的厚度在100和500nm之间。 聚合物是光致抗蚀剂。 通过使用光刻工艺或电子束光刻工艺对聚合物层进行图案化。