公开(公告)号：KR1020030091478A

公开(公告)日：2003-12-03

申请号：KR1020020029543

申请日：2002-05-28

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  차승환

IPC: C23C18/54

CPC classification number: C23C18/168 ,  C23C18/163 ,  C23C18/1683 ,  C23C18/405 ,  H01L21/288

Abstract: PURPOSE: A method for fabricating a copper film for semiconductor interconnection which has low resistivity by solving such conventional problems as interruption of electroless copper plating and increase of resistivity value is provided. CONSTITUTION: In a method for fabricating copper film for semiconductor interconnection in which electroless plating is performed on the surface of the object to be plated by dipping an object to be plated into an electroless copper plating solution comprising copper salt, complexing agent for forming ligands with copper ions to suppress liquid phase reaction, reducing agent for reducing copper ions and pH adjusting agent for keeping pH constant to oxidize the reducing agent, the method for fabricating copper film for semiconductor interconnection is characterized in that the electroless plating is performed by using formaldehyde as the reducing agent and maintaining temperature of the electroless copper plating solution to 30 to 70 deg.C, wherein the electroless plating is performed by using the electroless copper plating solution comprising 0.7 to 1.1 g/L of copper sulfate as the copper salt, 2 to 2.5 g/L of ethylene diamine acetic acid as the complexing agent, 0.3 to 0.5 g/L of formaldehyde as the reducing agent and 3 to 5 g/L of potassium hydroxide as the pH adjusting agent, wherein the electroless plating is performed as the object to be plated is being rotated, and wherein the electroless plating is performed at a nitrogen atmosphere or argon atmosphere.

Abstract translation: 目的：提供一种制造半导体互连用铜膜的方法，其通过解决诸如无电镀铜中断和电阻率值增加等常规问题而具有低电阻率。 构成：在制造用于半导体互连的铜膜的方法中，其中通过将要镀覆的物体浸渍到包含铜盐的无电镀铜溶液中，在待镀物体的表面上进行化学镀，将形成配体的络合剂与 铜离子抑制液相反应，用于还原铜离子还原剂和pH调节剂以保持pH恒定以氧化还原剂，半导体互连用铜膜的制造方法的特征在于，通过使用甲醛作为 所述还原剂和所述无电镀铜溶液的保持温度为30〜70℃，其中，所述无电解电镀通过使用包含0.7〜1.1g / L的硫酸铜作为铜盐的化学镀铜溶液进行，2〜 作为络合剂的乙二胺乙酸2.5g / L，形式为0.3〜0.5g / L 醛作为还原剂和3〜5g / L的氢氧化钾作为pH调节剂，其中，随着被镀物体的旋转而进行化学镀，其中化学镀在氮气氛或氩气下进行 大气层。

公开(公告)号：KR100509865B1

公开(公告)日：2005-08-22

申请号：KR1020030015226

申请日：2003-03-11

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  차승환

IPC: C23C18/42

Abstract: 본 발명은 은 무전해 도금(Ag electroless plating)을 위한 표면 활성화 방법에 관한 것으로서, 은 무전해 도금 전에 피도금재의 표면을 촉매로서 활성화시키는 방법에 있어서, 상기 촉매로서 금(Au)을 사용하는 것을 특징으로 하며, 이에 따라 접합성, 저항 측면 등에서 우수한 도금 특성을 나타내고, 박막의 배선용으로 사용시 신뢰도를 향상시키는 현저한 효과가 달성되게 된다.

公开(公告)号：KR100495648B1

公开(公告)日：2005-06-16

申请号：KR1020030015225

申请日：2003-03-11

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  권오중 ,  차승환

IPC: H01L21/288

Abstract: 본 발명은 고비저항 기판에서 전해도금에 의하여 금속박막을 형성하는 방법에 관한 것으로, 고비저항 기판을 금속활성화 용액으로 성장핵을 미리 생성시키는 표면활성화 후 전해도금용액을 이용하여 금속 박막을 형성시킴으로서 비저항이 높은 기판 위에 연속적인 박막을 형성하여 미세화되어 가는 반도체 소자에 적극 활용할 수 있다.

公开(公告)号：KR100454634B1

公开(公告)日：2004-11-05

申请号：KR1020010068867

申请日：2001-11-06

Applicant: 재단법인서울대학교산학협력재단

Inventor： 차승환 ,  김재정

IPC: C23C18/40

Abstract: PURPOSE: A method for forming copper film is provided in which formation of copper seed layer and copper electroplating are performed in the same container to prevent oxidation of the seed layer due to exposure to the atmosphere, and separate CVD or PVD apparatus for forming the copper seed layer is not required to reduce production cost. CONSTITUTION: The method comprises the steps of forming an electroless plated copper film on the surface of the object to be plated by dipping an object to be plated into an electroless plating solution comprising copper salt, complexing agent for inhibiting liquid reaction by forming copper ions and ligands, reducing agent for reducing copper ions, and a pH adjusting agent for maintaining a proper pH so that the reducing agent is oxidized; and forming an electroplated copper film on the object to be plated by directly impressing reduction potential to the object to be plated on which the electroless plated copper film is formed with the object to be plated not being taken out from the electroless plating solution, wherein the reducing agent is HCHO (formaldehyde), wherein the complexing agent is EDTA (ethylene-diamine tetraacetic acid), wherein the reduction potential is a potential corresponding to the range where copper exists for pH of the electroless plating solution in Pourbaix diagram for copper, and wherein the reduction potential is -0.5 V vs NHE or less.

Abstract translation: 目的：提供一种形成铜膜的方法，其中在同一容器中进行铜晶种层的形成和电镀铜以防止由于暴露于大气而引起的晶种层的氧化，并且分离用于形成铜的CVD或PVD装置 不需要种子层来降低生产成本。 构成：该方法包括以下步骤：通过将待镀物体浸入包含铜盐，通过形成铜离子来抑制液体反应的络合剂的无电镀溶液中，并在待镀物体的表面上形成化学镀铜膜，和 用于还原铜离子的还原剂和用于维持适当的pH使得还原剂被氧化的pH调节剂; 以及通过直接将还原电位施加到其上形成有化学镀铜膜的被镀物上而使被镀物不从无电镀液中取出来在被镀物上形成电镀铜膜，其中， 还原剂是HCHO（甲醛），其中络合剂是EDTA（乙二胺四乙酸），其中还原电位是对应铜的Pourbaix图中化学镀溶液的pH值存在的范围的电位，以及 其中还原电位相对于NHE为-0.5V以下。