-
公开(公告)号：KR1020070006966A
公开(公告)日：2007-01-12
申请号：KR1020050061936
申请日：2005-07-09
Applicant: 전남대학교산학협력단
Inventor： 류상완
Abstract: A method for fabricating an LED with a photonic crystal is provided to improve light extraction efficiency by supplying an LED with a photonic crystal capable of being produced at low cost. A first clad layer(12), a light emitting layer(14) and a second clad layer(16) are sequentially formed. An aluminum layer is deposited on the second clad layer. An alumina layer pattern is formed on the deposited aluminum layer by an anodizing method, including holes disposed at regular intervals. By using the alumina layer pattern as an etch mask, a predetermined depth of the second clad layer is etched to form a photonic crystal lattice array. In the anodizing method, an electrolysis polishing process is performed and a DC voltage of 10~200 volts is applied in phosphoric acid solution, oxalic acid solution, sulfuric acid solution or composition solution thereof by using an aluminum electrode.
Abstract translation: 提供了一种用于制造具有光子晶体的LED的方法，以通过向能够以低成本制造的光子晶体提供LED来提高光提取效率。 依次形成第一覆盖层（12），发光层（14）和第二覆盖层（16）。 铝层沉积在第二包覆层上。 通过阳极氧化方法在沉积的铝层上形成氧化铝层图案，包括以规则间隔布置的孔。 通过使用氧化铝层图案作为蚀刻掩模，蚀刻第二包层的预定深度以形成光子晶格阵列。 在阳极氧化方法中，通过使用铝电极，在磷酸溶液，草酸溶液，硫酸溶液或其组合物溶液中进行电解抛光处理，并施加10〜200伏直流电压。
-
公开(公告)号：KR101424405B1
公开(公告)日：2014-07-28
申请号：KR1020130117707
申请日：2013-10-02
Applicant: 전남대학교산학협력단
Inventor： 류상완
CPC classification number: H01S5/2214 , H01S3/1636 , H01S5/3416
Abstract: A laser diode having a nanoporous cladding layer and a method of fabricating the same are disclosed. The nanoporous cladding layer including pores, which are formed by electrochemically etching an n-GaN layer, is formed on at least one of a top and a bottom of an active layer. The nanoporous GaN layer having the pores formed by electrochemically etching the n-GaN layer of the nanoporous cladding GaN layer may be modified into an insulation layer through an oxidation process. Light confinement may be improved without reducing crystallization by the nanoporous GaN layer having a plurality of pores or by the insulation layer modified from the nanoporous GaN layer, so the laser diode may be easily operated in a single side mode. An area of a first electrode may be increased, and device resistance may be reduced since AlGaN having high resistance is removed. Also, an optical mode region may serve as a current injection region since the nanoporous GaN layer of the nanoporous cladding layer is modified into the insulation layer, and operating the current of a laser may be reduced by a reduction in leakage current.
Abstract translation: 公开了具有纳米多孔覆层的激光二极管及其制造方法。 通过电化学蚀刻n-GaN层而形成的包含孔的纳米多孔覆层形成在有源层的顶部和底部中的至少一个上。 具有通过电化学蚀刻纳米多孔覆层GaN层的n-GaN层形成的孔的纳米多孔GaN层可以通过氧化工艺改性为绝缘层。 可以通过具有多个孔的纳米多孔GaN层或通过从纳米多孔GaN层修饰的绝缘层减少结晶而改善光限制，因此激光二极管可以容易地以单侧模式操作。 可以增加第一电极的面积，并且由于去除了具有高电阻的AlGaN，因此器件电阻可能会降低。 此外，由于纳米多孔覆层的纳米多孔GaN层被修改为绝缘层，所以光模式区域可以用作电流注入区域，并且可以通过减少漏电流来减少操作激光器的电流。
-
公开(公告)号：KR101001773B1
公开(公告)日：2010-12-15
申请号：KR1020080097552
申请日：2008-10-06
Applicant: 전남대학교산학협력단
Inventor： 류상완
IPC: H01L33/12 , H01L21/3063
Abstract: 본 발명은 n-GaN계열의 제1 반도체영역과 상기 제1 반도체영역과 다른 도핑 농도를 갖는 n-GaN계열의 제2반도체 영역을 포함하는 반도체 구조물을 양극으로 하고 전해액을 음극으로 하여 전해 에칭을 수행하여, 제1 반도체영역과 제2 반도체 영역의 에칭 속도가 서로 다르게 하여 반도체 영역의 선택적 식각방법 및 반도체소자를 기판으로부터 분리하는 방법을 제공한다.
GaN, 기판 분리, 전해액, 전해에칭-
公开(公告)号：KR1020100038539A
公开(公告)日：2010-04-15
申请号：KR1020080097552
申请日：2008-10-06
Applicant: 전남대학교산학협력단
Inventor： 류상완
IPC: H01L33/12 , H01L21/3063
Abstract: PURPOSE: A method for selectively etching a semiconductor region and the method for separating a semiconductor device from a substrate are provided to discharge heat through a metal substrate by growing an optical element on a sapphire substrate and transferring the optical element to the metal substrate with high thermal conductivity. CONSTITUTION: A n-GaN based first semiconductor region(120) and a n-GaN based second semiconductor region(240) are prepared on a substrate. An electrolyte etching process is performed using the first semiconductor region and the second semiconductor region as an anode and an electrolyte as a cathode. An etching speed is differently controlled by controlling the doping density on the first and second semiconductor regions.
Abstract translation: 目的：提供一种选择性蚀刻半导体区域的方法和用于从衬底分离半导体器件的方法，用于通过在蓝宝石衬底上生长光学元件并将光学元件转移到金属衬底上而将热量从金属衬底放电 导热系数。 构成：在衬底上制备基于n-GaN的第一半导体区域（120）和n-GaN基第二半导体区域（240）。 使用第一半导体区域和第二半导体区域作为阳极和电解质作为阴极进行电解质蚀刻工艺。 通过控制第一和第二半导体区域上的掺杂密度来不同地控制蚀刻速度。
-
公开(公告)号：KR100889978B1
公开(公告)日：2009-03-25
申请号：KR1020070103186
申请日：2007-10-12
Applicant: 전남대학교산학협력단
IPC: H01L21/3063 , H01L21/306
CPC classification number: H01L21/30635
Abstract: A method of selectively etching semiconductor region, a separation method of a semiconductor layer and a separation method of a semiconductor device from a substrate are provided to easily separate the semiconductor structure and transfer to the other substrate by using the electrolytic etching manner. The first semiconductor layer(230) of the N-type GaN series, and the second semiconductor layer(240) of the other conductive type GaN series and a semiconductor element portion(300) are successively formed on the first substrate(210). The semiconductor element portion is adhered to the second substrate(500). The etching is performed by using the electrolyte including the oxalic acid. The etching rate of the first semiconductor layer is greater than the etching rate of the second semiconductor layer. The semiconductor layer is etched more quickly than the second semiconductor.
Abstract translation: 提供了选择性地蚀刻半导体区域的方法，半导体层的分离方法和半导体器件与衬底的分离方法，以便通过使用电解蚀刻方式容易地分离半导体结构并转移到另一个衬底。 在第一基板（210）上依次形成N型GaN系列的第一半导体层（230）和另一导电型GaN系列的第二半导体层（240）和半导体元件部（300）。 半导体元件部分粘附到第二基板（500）。 通过使用包含草酸的电解质进行蚀刻。 第一半导体层的蚀刻速率大于第二半导体层的蚀刻速率。 半导体层比第二半导体蚀刻得更快。
-
Patent Agency Ranking
公开(公告)号：KR100882331B1
公开(公告)日：2009-02-11
申请号：KR1020060134979
申请日：2006-12-27
Applicant: 전남대학교산학협력단
Inventor： 류상완
IPC: H01L33/06
Abstract: 본 발명은 기판 상부에 장벽층과 양자우물층이 교대로 형성되는 양자 우물 구조의 전기장 조절 구조에 있어서, 각 장벽층들 내부에는 소정 두께로 n형 또는 p형 도핑영역들이 구비되고, 상기 n형 도핑영역과 상기 p형 도핑영역은 적어도 하나의 양자우물층이 내부에 포함되는 구조로 형성되는 양자 우물의 전기장 조절 구조를 제공한다.
양자우물, 장벽층, 도핑-
公开(公告)号：KR100823809B1
公开(公告)日：2008-04-21
申请号：KR1020060107913
申请日：2006-11-02
Applicant: 전남대학교산학협력단
CPC classification number: B82B1/008 , B82B3/0038 , B82Y40/00
Abstract: A nano structure is provided to embody a more beautiful color than ordinary pigments, and be surface-colored at low cost and in a simple manner. A method for manufacturing a nano structure for coloring the surface thereof includes the steps of: forming a first metal layer on the upper part of the surface; anodizing the metal layer to form a nano hole array structure(20) in which nano holes are formed in an array shape at regular intervals; forming a second metal layer(30) on the at least upper parts of the nano holes; and further forming a protective layer on the upper part on which the second metal layer is formed. The pitch(D) between nano holes is 20-500 nm.
Abstract translation: 提供纳米结构以体现比普通颜料更美丽的颜色，并以低成本和简单的方式进行表面着色。 制造用于使其表面着色的纳米结构的方法包括以下步骤：在表面的上部形成第一金属层; 阳极氧化金属层以形成纳米孔阵列结构（20），其中纳米孔以规则间隔形成为阵列形状; 在所述纳米孔的至少上部上形成第二金属层（30）; 并在其上形成有第二金属层的上部形成保护层。 纳米孔之间的间距（D）为20-500nm。
-
公开(公告)号：KR102158176B1
公开(公告)日：2020-09-22
申请号：KR1020180137281
申请日：2018-11-09
Applicant: 전남대학교산학협력단
Inventor： 류상완
IPC: H01L21/02 , H01L21/311 , H01L21/306 , H01L21/033 , H01L33/02
-
公开(公告)号：KR101914707B1
公开(公告)日：2018-11-05
申请号：KR1020170034484
申请日：2017-03-20
Applicant: 전남대학교산학협력단
IPC: H01L29/66 , H01L29/778 , H01L21/3063 , H01L21/306
Abstract: 본발명은고성능저전력전계효과트랜지스터소자및 이의제조방법에관한것으로, 본발명이일실시예에따른고성능저전력전계효과트랜지스터소자의제조방법은준비된기판상에유전체를증착및 패터닝하여유전층을형성하는단계; 상기유전층의상부에 u-GaN, n-GaN 및 u-GaN이순차적으로증착된 GaN 구조층을형성하는단계; 상기 GaN 구조층을식각하여선택된칩 형상으로패터닝하는단계; 상기유전층을식각하여제거하는단계; 상기유전층의상부 u-GaN를식각하여 n-GaN를노출시키는단계; 상기 n-GaN를식각하여박막의 GaN층을형성하는단계; 및상기 GaN층에게이트유전체증착및 전극을형성하는단계를포함하는것을특징으로한다.
-
公开(公告)号：KR101517850B1
公开(公告)日：2015-05-08
申请号：KR1020140007420
申请日：2014-01-21
Applicant: 전남대학교산학협력단 , 주식회사 광주전통문화평생교육원
CPC classification number: G09F23/00 , G09F13/22 , G09F27/004 , G09F2013/222 , H04Q9/00
Abstract: 본발명은도자기표면의문양을역동적으로움직이는효과를갖는광응용시스템에관한것으로, 도자기표면의문양에광섬유를부착고정하여광섬유에의한 LED 광신호전송구조를통해도자기문양의움직임효과를실시간으로표출할수 있도록함으로써도자기제품의장식적미감효과를극대화시킬수 있도록함에그 목적이있다. 이를위해구성되는본 발명은도자기표면의문양에광신호를이용하여문양의움직임효과를실시간으로표출할수 있도록하는도자기표면문양의표출시스템에있어서, 입사되는광원을통해도자기표면에형성되는문양의표출이이루어지도록하는문양표출디스플레이; 문양표출디스플레이의다양한디스플레이연출프로그램이제작설정되어전송을통해디스플레이연출프로그램에따라문양표출디스플레이에표출이이루어질수 있도록제어하는관제제어부; 관제제어부와문양표출디스플레이사이의문양표출에따른신호의송수신이이루어지는통신부; 및관제제어부의제어하에통신부를통해전송된디스플레이연출프로그램에따라문양표출디스플레이를제어하는제어부의구성으로이루어진다.
Abstract translation: 本发明涉及具有动态地移动瓷器表面上的图案的效果的光施加系统。 本发明的目的是通过将光纤固定在陶瓷表面上来实现装饰和美学效果的最大化，从而通过LED光信号实时表达瓷器表面上的图案的移动效应 通过光纤实现的传输结构。 为了实现上述钱包，根据本发明的用于通过将光信号施加到瓷器表面上的图案来实时表达图案的系统包括：用于表示形成在表面上的图案的图案表达显示 瓷器通过入射光源; 命令控制单元，用于产生，设置和发送显示表现显示的各种显示方向程序，并且用于根据显示方向程序进行控制以便表现为图形表达式显示; 通信单元，用于根据控制单元和模式表达式显示之间的模式表达来接收和发送信号; 以及控制单元，用于根据在命令控制单元的控制下经由通信单元发送的显示表达程序来控制图案表达式显示。
-
-
-
-
-
-
-
-
-
Search Results
28
records
(took 0.021 seconds)
