Abstract:
PURPOSE: A material is provided to obtain high conductivity by transferring phonons along the surface of a particle without dispersing the phonons in a polymer resin. CONSTITUTION: A material(100) comprises an elastic particle(130) formed of a polymer resin; and a highly thermal conductive particle(110) which is coupled to the surface of the elastic particle by an integrated high spinning method. The elastic modulus of the elastic particle is 0.01-100 GPa. The thermal conductivity of the highly thermal conductive particle is 1.0-2,000 W/mK. The size of the elastic particle is 1micron-100mm. The particle size of the highly thermal conductive particle is 1nm-1mm. The highly thermal conductive particle is coupled to the surface of the elastic particle.
Abstract:
미세피치를 갖는 두 전극을 반복압착하여 연결할 수 있는 경박단소화된 다목적 비등방성 입자배열체 및 그 제조방법이 제안된다. 제안된 비등방성 입자배열체는 탄성 고분자층 및 탄성 고분자층내에 상부 및 하부가 노출되도록 위치하는 탄성 도전체 또는 탄성 열전도체를 포함한다. 비등방성, 열전도, 전기전도, 커넥터
Abstract:
본 발명은 용액공정을 이용한 산화물 박막 소결용 자외선 램프 장치를 개시한다. 본 발명은 샘플탑재부와, 내부에 챔버 공간을 가지며, 일정 간격을 가지고 이격 분리되어 형성된 하우징을 구비하되, 하우징은 적어도 2개의 영역으로 분리된 구조를 가지며, 일 영역에는 챔버 공간의 상부에는 상기 샘플탑재부와 대향되게 형성되어 하부로 자외선을 조사하기 위한 자외선 램프부를 포함하고, 일영역 내부로 불활성가스를 주입하기 위한 불활성가스주입부를 구비하고, 다른 영역에는 자외선 램프부가 설치되지 않으며, 샘플탑재부는 샘플을 탑재한 상태에서 이동가능하게 구성된다.
Abstract:
Disclosed is an ultraviolet lamp device for sintering an oxide thin film using a solution process. The ultraviolet lamp device includes a sample mounting part; a housing which has a structure which surrounds the sample mounting part and includes a chamber space in side; an ultraviolet lamp part which faces the sample mounting part in the upper part of a chamber space and emits ultraviolet rays downwards; and an inert gas injection part which injects inert gas into a sample which is mounted on the sample mounting part and is formed in a region of the housing.
Abstract:
본 발명은 다층 전이금속 칼코겐화합물을 이용한 투명전자소, 이를 이용한 광전자 소자, 및 트랜지스터 소자에 관한 것으로서, 종래의 단층 전이금속 칼코겐화합물을 바람직하게는 3층 이상의 다층으로 구성하여 복수의 투명전극 사이에 채널층으로 형성한 발명에 관한 것이다. 이를 위해 투명 전도성 물질로 이루어진 복수의 전극, 그리고, 다층 전이금속 칼코겐 화합물(Transition Metal Dichalcogenides)에 의해 상기 복수의 전극 사이에 채널이 형성되는 채널영역을 포함하는 것을 특징으로 하는 다층 전이금속 칼코겐화합물을 이용한 투명전자소자가 개시된다.
Abstract:
The present invention relates to an ultraviolet ray lamp device for sintering a metal-oxide thin film using a solution process. The present invention includes a sample mounting part and a housing which has a chamber space inside and is separated with a constant distance. The housing has a structure divided into two or more separation regions. An ultraviolet ray lamp for emitting ultraviolet rays downwards which faces the sample mounting part is formed in the upper part of the chamber space in one region. An inert gas injection part for injecting an inert gas into the one region is formed. The ultraviolet ray lamp is not installed in the other region. The sample mounting part can be moved while a sample is mounted on the sample mounting part.
Abstract:
PURPOSE: An inverter device using a thin film transistor and a manufacturing method thereof are provided to improve the reproducibility of electrical characteristics by inducing an electrical characteristic difference between two thin film transistors through a gate insulation layer with a first thickness and a second thickness. CONSTITUTION: A gate electrode (120) is deposited on a substrate (110). A gate insulating layer (130) is deposited on the gate electrode with a first thickness. A semiconductor layer (140) is deposited on the gate insulation layer with the first thickness. A source electrode (152) and a drain electrode (154) are deposited on the semiconductor layer. The gate insulation layer is deposited on a gate electrode (120') with a second thickness. The first thickness is different from the second thickness. A semiconductor layer (140') is deposited on the gate insulation layer with the second thickness.