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公开(公告)号：KR101240292B1
公开(公告)日：2013-03-11
申请号：KR1020110146533
申请日：2011-12-29
Applicant: 전자부품연구원
Abstract: PURPOSE: A supporting structure for a flexible substrate and a flexible substrate supporting method are provided to easily attach and detach the flexible substrate by using a supporting unit which is divided into a plurality of parts. CONSTITUTION: A support layer(120) is formed on an elastic layer(110). The support layer is formed to be separated into multiple support units(121) as the elastic layer extends and shrinks. The support layer supports a flexible substrate(10). The elastic layer is formed to be extended and shrunk in a transverse direction. The multiple support units are formed to be separated in a transverse direction as the elastic layer extends and shrinks in a transverse direction.
Abstract translation: 目的：提供一种用于柔性基板的支撑结构和柔性基板支撑方法，通过使用被分成多个部分的支撑单元来容易地附接和分离柔性基板。 构成：在弹性层（110）上形成支撑层（120）。 当弹性层延伸和收缩时，支撑层形成为分离成多个支撑单元（121）。 支撑层支撑柔性基板（10）。 弹性层形成为沿横向延伸和收缩。 当弹性层沿横向延伸并收缩时，多个支撑单元形成为在横向上分离。
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公开(公告)号：KR101199289B1
公开(公告)日：2012-11-09
申请号：KR1020110045575
申请日：2011-05-16
Applicant: 전자부품연구원 , 엘에스전선 주식회사
Abstract: PURPOSE: A polymer composite is provided to remove a space charge generated in an insulating material of a high voltage direct current cable for power transmission by comprising a partially reduced material of a graphene oxide. CONSTITUTION: A polymer composite comprises a graphene oxide partially reduced by 80-0.01%. The comprised amount of the partially reduced material of graphene oxide is 0.01-50 weight%. The size of the partially reduced material of graphene oxide is 15 um or less. A manufacturing method of the partially reduced material of graphene oxide is 15 um or less. A manufacturing method of the polymer composite comprises a step(S20) of manufacturing the partially reduced material of graphene oxide by partially reducing graphene oxide; a step(S30) of manufacturing a polymer composite comprising the partially reduced material. [Reference numerals] (AA) Start; (BB) Finish; (S10) Manufacturing graphene oxide; (S20) Partial reduction graphene oxide; (S30) Manufacturing polymer composite by graphene oxide comprising partial reduced material
Abstract translation: 目的：提供一种聚合物复合材料，用于通过包括氧化石墨烯的部分还原的材料去除用于动力传递的高压直流电缆的绝缘材料中产生的空间电荷。 构成：聚合物复合材料包含部分减少80-0.01％的石墨烯氧化物。 氧化石墨烯的部分还原材料的含量为0.01-50重量％。 石墨烯氧化物的部分还原材料的尺寸为15μm或更小。 石墨烯氧化物的部分还原材料的制造方法为15μm以下。 聚合物复合材料的制造方法包括通过部分还原石墨烯氧化物制造氧化石墨烯的部分还原材料的步骤（S20） 制造包含部分还原材料的聚合物复合材料的步骤（S30）。 （附图标记）（AA）开始; （BB）完成; （S10）制造氧化石墨烯; （S20）部分还原石墨烯氧化物; （S30）通过包含部分还原材料的氧化石墨烯制造聚合物复合材料
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公开(公告)号：KR1020140084433A
公开(公告)日：2014-07-07
申请号：KR1020120153256
申请日：2012-12-26
Applicant: 전자부품연구원 , 중앙대학교 산학협력단
IPC: H01L21/26 , H01L21/324
CPC classification number: H01L21/67115 , H01L21/324 , H01L21/67017
Abstract: The present invention relates to an ultraviolet ray lamp device for sintering a metal-oxide thin film using a solution process. The present invention includes a sample mounting part and a housing which has a chamber space inside and is separated with a constant distance. The housing has a structure divided into two or more separation regions. An ultraviolet ray lamp for emitting ultraviolet rays downwards which faces the sample mounting part is formed in the upper part of the chamber space in one region. An inert gas injection part for injecting an inert gas into the one region is formed. The ultraviolet ray lamp is not installed in the other region. The sample mounting part can be moved while a sample is mounted on the sample mounting part.
Abstract translation: 本发明涉及使用溶液法烧结金属氧化物薄膜的紫外线灯装置。 本发明包括一个样品安装部分和一个壳体，它在内部具有一个室间隔并以一定的距离分开。 壳体具有分为两个或更多个分离区域的结构。 在一个区域中的室空间的上部形成有用于向下发射面向样品安装部的紫外线的紫外线灯。 形成用于将惰性气体注入该区域的惰性气体注入部。 紫外线灯不安装在其他区域。 样品安装部件可以在样品安装在样品安装部件上时移动。
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公开(公告)号：KR1020130098739A
公开(公告)日：2013-09-05
申请号：KR1020120020499
申请日：2012-02-28
Applicant: 전자부품연구원
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L27/1237 , H01L29/42384
Abstract: PURPOSE: An inverter device using a thin film transistor and a manufacturing method thereof are provided to improve the reproducibility of electrical characteristics by inducing an electrical characteristic difference between two thin film transistors through a gate insulation layer with a first thickness and a second thickness. CONSTITUTION: A gate electrode (120) is deposited on a substrate (110). A gate insulating layer (130) is deposited on the gate electrode with a first thickness. A semiconductor layer (140) is deposited on the gate insulation layer with the first thickness. A source electrode (152) and a drain electrode (154) are deposited on the semiconductor layer. The gate insulation layer is deposited on a gate electrode (120') with a second thickness. The first thickness is different from the second thickness. A semiconductor layer (140') is deposited on the gate insulation layer with the second thickness.
Abstract translation: 目的：提供一种使用薄膜晶体管的逆变器装置及其制造方法，通过经由具有第一厚度和第二厚度的栅绝缘层引起两个薄膜晶体管之间的电特性差异来提高电特性的再现性。 构成：栅极电极（120）沉积在衬底（110）上。 栅极绝缘层（130）以第一厚度沉积在栅电极上。 半导体层（140）以第一厚度沉积在栅极绝缘层上。 源电极（152）和漏电极（154）沉积在半导体层上。 栅极绝缘层沉积在具有第二厚度的栅电极（120'）上。 第一厚度不同于第二厚度。 半导体层（140'）以第二厚度沉积在栅极绝缘层上。
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公开(公告)号：KR1020130077313A
公开(公告)日：2013-07-09
申请号：KR1020110145953
申请日：2011-12-29
Applicant: 전자부품연구원
Abstract: PURPOSE: A nanoparticle-containing anisotropy light transmission material is provided to reduce light loss out of a light transfer material by forming a clad layer having a low refractivity or high reflectivity. CONSTITUTION: A nanoparticle-containing anisotropy light transmission material (10) has at least one of nanofluorescent materials converting the wavelength and nanoquantum dots dispersed in the anisotropy light transmission material. The body has a fibrous form. One of the nanofluorescent materials and the nanoquantum dots are mixed and dispersed in a transparent polymer resin. The diameters of the nanofluorescent materials and nanoquantum dots are smaller than 100 nm. The nanoparticle-containing anisotropy light transmission material additionally includes a clad layer which is coated to surround the body. The clad layer is formed of a material which is smaller than the body.
Abstract translation: 目的：提供一种含纳米颗粒的各向异性透光材料，通过形成具有低折射率或高反射率的包覆层来减少光传输材料的光损失。 构成：含纳米颗粒的各向异性透光材料（10）具有分散在各向异性透光材料中的波长和纳米量点的纳米荧光材料中的至少一种。 身体有纤维状。 将纳米荧光材料和纳米量子点之一混合并分散在透明聚合物树脂中。 纳米荧光材料和纳米量子点的直径小于100nm。 含纳米颗粒的各向异性透光材料另外包括涂覆以包围主体的覆层。 包覆层由比本体小的材料形成。
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Patent Agency Ranking
公开(公告)号：KR101550359B1
公开(公告)日：2015-09-07
申请号：KR1020130149235
申请日：2013-12-03
Applicant: 전자부품연구원 , 경희대학교 산학협력단
Abstract: 양자점제조방법은이차원적평면구조를가지는화합물박막을화학기상증착(Chemical Vapor Deposition(CVD)) 방식으로기판에증착하는단계, 증착된상기화합물박막을기계적박리방식으로박리시키는단계및 박리된상기화합물박막을이용하여양자점을생성하는단계를포함한다.
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公开(公告)号：KR101395906B1
公开(公告)日：2014-05-19
申请号：KR1020120153257
申请日：2012-12-26
Applicant: 전자부품연구원 , 중앙대학교 산학협력단
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/78633 , H01L29/4908 , H01L29/66742 , H01L29/7869
Abstract: The present invention relates to a thin film transistor and a manufacturing method thereof. A thin film transistor includes a gate electrode which is formed by stacking at least two gate materials on a substrate, a gate insulating layer which is formed in the upper part of the gate electrode, an oxide semiconductor layer which is formed in the upper part of the gate insulating layer, a source/drain electrode which is respectively connected to at least part of the oxide semiconductor layer. A reflection structure which has UV reflectivity higher than that of the material of the gate electrode is formed in the upper part of the gate electrode.
Abstract translation: 薄膜晶体管及其制造方法技术领域本发明涉及薄膜晶体管及其制造方法。 薄膜晶体管包括：栅极电极，其通过在基板上堆叠至少两个栅极材料形成;栅极绝缘层，形成在栅电极的上部;形成在栅电极的上部的氧化物半导体层 栅极绝缘层，分别连接到氧化物半导体层的至少一部分的源极/漏极电极。 在栅电极的上部形成有具有高于栅电极的材料的UV反射率的反射结构。
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公开(公告)号：KR101392873B1
公开(公告)日：2014-05-09
申请号：KR1020120120538
申请日：2012-10-29
Applicant: 전자부품연구원
Abstract: Disclosed is a method for forming a nanostructure using various kinds of solvents. The method for forming the nanostructure using the various kinds of solvents according to one embodiment of the present invention includes: a first step of preparing a first solution by dissolving a first solute in a first solvent; a second step of preparing a second solution by dissolving a second solute in a second solvent; a third step of preparing a hybrid solution by stirring the first solution and the second solution; and a fourth step of forming the nanostructure using the hybrid solution.
Abstract translation: 公开了使用各种溶剂形成纳米结构的方法。 根据本发明的一个实施方案，使用各种溶剂形成纳米结构的方法包括：通过将第一溶质溶解在第一溶剂中制备第一溶液的第一步骤; 通过将第二溶质溶解在第二溶剂中制备第二溶液的第二步骤; 通过搅拌第一溶液和第二溶液来制备混合溶液的第三步骤; 以及使用该混合溶液形成纳米结构的第四步骤。
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公开(公告)号：KR101334136B1
公开(公告)日：2013-11-28
申请号：KR1020110145953
申请日：2011-12-29
Applicant: 전자부품연구원
Abstract: 나노 입자를 포함하는 비등방성 광전달 소재가 개시된다. 본 발명의 일 실시예에 따른 비등방성 광전달 소재는 광의 파장을 변환시키는 나노 형광체 및 나노 양자점 중 적어도 하나가 몸체 내부에 혼합 분산되어 있는 것으로, 상기 몸체가 섬유상 형태를 가지는 것을 특징으로 한다.
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公开(公告)号：KR101649102B1
公开(公告)日：2016-08-30
申请号：KR1020140100556
申请日：2014-08-05
Applicant: 경희대학교 산학협력단 , 전자부품연구원
IPC: H01L29/786
Abstract: 투명전극을포함한반도체장치및 그제조방법이제공된다. 상기반도체장치는, 복수개의전극, 상기복수개의전극중 적어도일부사이에채널을형성하는채널영역, 및상기복수개의전극중 적어도일부와상기채널영역의적어도일부사이에형성되는인터레이어막을포함하되, 상기인터레이어막은메탈을포함하며, 상기인터레이어막에포함된상기메탈의일함수와상기채널영역에포함된채널영역물질의전자친화도의차이가 ± 0.5eV 이내이다.
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