公开(公告)号：KR100872801B1

公开(公告)日：2008-12-09

申请号：KR1020070073333

申请日：2007-07-23

Applicant: 포항공과대학교 산학협력단

Inventor： 이한보람 ,  구길호 ,  박찬경 ,  김형준

IPC: H01L21/28

CPC classification number: H01L21/28518 ,  H01L21/324 ,  H01L21/76838

Abstract: The method the fabricating the metal silicide of the semiconductor device is provided to control the thickness of the nitride diffusion film by using the plasma exposure. The method for manufacturing the metal silicide comprises as follows. The nitride thin film is formed on the silicon substrate. The metallic film is formed on the nitride thin film. The metal silicide is formed by performing a heat treatment on the thin film. The nitride thin film is formed through the plasma nitridation method. The Ti anti-oxidation layer for preventing the oxidation caused by the thermal budget is formed on the metal thin film. The Ti anti oxidation layer is formed after the metal thin film deposition is performed and exposed in air.

Abstract translation: 提供了制造半导体器件的金属硅化物的方法，以通过使用等离子体曝光来控制氮化物扩散膜的厚度。 金属硅化物的制造方法如下。 氮化物薄膜形成在硅衬底上。 金属膜形成在氮化物薄膜上。 通过对薄膜进行热处理来形成金属硅化物。 通过等离子体氮化法形成氮化物薄膜。 在金属薄膜上形成用于防止由热预算引起的氧化的Ti抗氧化层。 在金属薄膜沉积进行并在空气中暴露之后形成Ti抗氧化层。