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公开(公告)号:KR1020100000966A
公开(公告)日:2010-01-06
申请号:KR1020080060662
申请日:2008-06-26
Applicant: 포항공과대학교 산학협력단
CPC classification number: H01L21/0229 , B82Y30/00 , B82Y40/00 , H01L21/02274 , H01L21/02603
Abstract: PURPOSE: A method for manufacturing a metal nano structure is provided to accurately control length of the nano structure through growth rate regulation. CONSTITUTION: A method for manufacturing a metal nano structure comprises: a step of adding a metal precursor to heated semiconductor substrate to adsorb on the semiconductor substrate; a step of inputting purging gas to remove metal precursor which is not adsorbed; a step of inputting reaction gas with the metal precursor to reduce metal; and a step of inputting purging gas to remove reaction gas.
Abstract translation: 目的:提供一种制造金属纳米结构的方法,以通过生长速率调节来精确控制纳米结构的长度。 构成:金属纳米结构体的制造方法,其特征在于,包括:将加热了的半导体基板的金属前体加入到半导体基板上的工序; 输入吹扫气体以除去未吸附的金属前体的步骤; 与金属前体输入反应气体以还原金属的步骤; 以及输入吹扫气体以除去反应气体的步骤。