公开(公告)号：KR1020100000966A

公开(公告)日：2010-01-06

申请号：KR1020080060662

申请日：2008-06-26

Applicant: 포항공과대학교 산학협력단

Inventor： 김형준 ,  이한보람 ,  구길호 ,  박찬경

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: H01L21/0229 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02274 ,  H01L21/02603

Abstract: PURPOSE: A method for manufacturing a metal nano structure is provided to accurately control length of the nano structure through growth rate regulation. CONSTITUTION: A method for manufacturing a metal nano structure comprises: a step of adding a metal precursor to heated semiconductor substrate to adsorb on the semiconductor substrate; a step of inputting purging gas to remove metal precursor which is not adsorbed; a step of inputting reaction gas with the metal precursor to reduce metal; and a step of inputting purging gas to remove reaction gas.

Abstract translation: 目的：提供一种制造金属纳米结构的方法，以通过生长速率调节来精确控制纳米结构的长度。 构成：金属纳米结构体的制造方法，其特征在于，包括：将加热了的半导体基板的金属前体加入到半导体基板上的工序; 输入吹扫气体以除去未吸附的金属前体的步骤; 与金属前体输入反应气体以还原金属的步骤; 以及输入吹扫气体以除去反应气体的步骤。