Abstract:
PURPOSE: An N-hydroxyphenylmaleimide-containing polymer, an antireflection film composition containing the polymer, an organic antireflection film containing the polymer and its preparation, and a semiconductor device prepared by using the composition are provided, to inhibit the diffused reflection of the exposed light during the processing of micro pattern and the generation of standing wave, thereby improving the production yield of a semiconductor having a super high resolution of 70-120 nm. CONSTITUTION: The N-hydroxyphenylmaleimide-containing polymer is represented by the formula 1, wherein R is H, tetrahydropyranyl, -COOR3, (SiR4)3 or t-butyl group; R3 and R4 are methyl, t-butyl or an alkyl group of C2-C3, respectively; R1 and R2 which are independently each other represent H, an alkyl group of C1-C6, an alkoxyalkyl group of C1-C6, a hydroxyalkyl group of C1-C6 or a halogenated alkyl group of C1-C6; and the mole fraction, x is 0.1-0.7, y is 0-0.8, z is 0-0.55 and p is 0-0.5 based on the total mol of x+y+z+p.
Abstract translation:目的:提供含有N-羟基苯基马来酰亚胺的聚合物,含有聚合物的防反射膜组合物,含有该聚合物的有机抗反射膜及其制备方法以及使用该组合物制备的半导体装置,以抑制曝光的扩散反射 在微图案的处理和驻波的产生中,由此提高70〜120nm的超高分辨率的半导体的制造成品率。 构成:含有N-羟基苯基马来酰亚胺的聚合物由式1表示,其中R为H,四氢吡喃基,-COOR 3,(SiR 4)3或叔丁基; R3和R4分别是甲基,叔丁基或C2-C3的烷基; R 1和R 2彼此独立地表示H,C 1 -C 6烷基,C 1 -C 6烷氧基烷基,C 1 -C 6羟基烷基或C 1 -C 6卤代烷基; 摩尔分数x为0.1-0.7,y为0-0.8,z为0-0.55,p为0-0.5,基于x + y + z + p的总摩尔数。
Abstract:
The present invention relates to an energy harvester and, more specifically, to an energy harvester comprising: a mass unit having a predetermined mass and inertia moment; a connecting unit which is extended in at least one direction and connects the mass unit with a vibration source; and an energy harvesting unit disposed in the connecting unit to harvest energy, wherein the connection unit includes a plurality of links and a joint disposed between the links, and the energy harvesting unit is configured to be disposed in the joint.