公开(公告)号：KR1020080017845A

公开(公告)日：2008-02-27

申请号：KR1020060079567

申请日：2006-08-22

Applicant: 한국과학기술연구원

Inventor： 신경호 ,  홍진기 ,  주성중 ,  이긍원

IPC: H01L43/08 ,  G01D5/12

CPC classification number: H01L43/06 ,  G01R33/07 ,  G01R33/095 ,  H01L43/065 ,  H01L43/08

Abstract: A hybrid semiconductor-ferromagnet device is provided to obtain a junction of two magnetic-field regions by positioning local magnetic field regions with opposite directions near to each other. A hybrid semiconductor-ferromagnet device includes a junction structure of positive and negative magnetic field regions. A semiconductor 2DEG (2-Dimensional Electron Gas) has a channel, through which current flows. Two micromagnets with a predetermined interval on the same plane is positioned on the semiconductor 2DEG. Two magnetic barriers with different signs are formed in the semiconductor 2DEG under the portion, in which the two micromagnets face each other as an external magnetic field is applied. Positive and negative voltage probes are connected to the positive and negative magnetic field regions, respectively, of one side of the channel.

Abstract translation: 提供了一种混合半导体 - 铁磁体装置，通过将具有相反方向的局部磁场区域彼此靠近来获得两个磁场区域的结。 混合半导体 - 铁磁体装置包括正磁场区域和负磁场区域的结结构。 半导体2DEG（2维电子气体）具有电流流动的通道。 在同一平面上具有预定间隔的两个微电磁体位于半导体2DEG上。 在半导体2DEG中，在施加外部磁场的情况下，两个微型磁铁彼此面对的部分形成具有不同符号的两个磁屏障。 正和负电压探头分别连接到通道一侧的正和负磁场区域。