Abstract:
PURPOSE: A method for forming a pattern of a functional composition on a substrate and an electronic device including the pattern formed by the same method are provided to form a pattern for a touch panel, a photovoltaic panel, and an OLED panel at a low cost, and also form a pattern for a large area touch, photovoltaic, and OLED panels. CONSTITUTION: A method for forming a pattern (11) of a functional composition on a substrate (40) comprises the steps of: applying a functional composition (20) to the surface of a mold (10) in which a concave pattern is formed; removing the functional composition applied to the convex surface of the mold pattern; applying liquid thermosetting resin (30) to the surface of mold where the pattern is formed; disposing the substrate on a thermosetting resin layer; hardening the thermosetting resin layer; and removing the mold. An electronic device includes the substrate, the thermosetting resin layer formed on one surface of the substrate, and a functional composition pattern formed on the thermosetting resin layer.
Abstract:
PURPOSE: A soft mold and a manufacturing method of the same are provided to manufacture electrode patterns of 80um or less line widths by charging highly viscose fluid and forming a mold pattern. CONSTITUTION: A manufacturing method of a soft mold includes the following steps of: processing the surface(12) of a silicon substrate(10) based on a reactive ion etching method to have nanoscale surface roughness; patterning a photoresist pattern(20) on the surface of the silicon substrate; coating the surface of the silicon substrate with polymer(40); and separating the silicon substrate from the polymer to obtain a soft mold(50). The soft mold has the nanoscale surface roughness and a mold pattern(56). The mold pattern is charged with highly viscose fluid and is transferred on the surface of a touch panel.
Abstract:
PURPOSE: A manufacturing method of a nanoscale silver electrode pattern using a soft mold is provided to transfer silver ink to a touch panel, thereby manufacturing a silver electrode pattern with a linewidth which is less than 80 micrometers. CONSTITUTION: A soft mold(50) including a nanoscale surface roughness(54) and a nanoscale mold pattern(56) is prepared on a surface. Silver ink is charged in the mold pattern. The silver ink of the surface of the soft mold is removed. A silver electrode pattern is formed by transferring the silver ink to a surface of a touch panel. The soft mold is made of polymers. The width of the silver electrode pattern is less than 80 micrometers. The depth of the mold pattern is 5-30 micrometers.
Abstract:
PURPOSE: A manufacturing method of graphene complex including transition metal oxide or hydroxide particles, the graphene complex manufactured by the same, and a charge storing device including the same are provided to reduce the coagulation phenomenon of the graphene by attaching the graphene to transition metal oxides or hydroxides. CONSTITUTION: A manufacturing method of graphene complex includes the following steps: graphene oxides are dispersed in a solvent; transition metal oxides or hydroxide nanoparticles are prepared in the solvent; and the graphene oxides dispersed in the solvent are reduced. A manufacturing method of the transition metal oxide or hydroxide nanoparticles includes the following steps: transition metal oxide or hydroxide precursors are added into the graphene oxide dispersed solvent; and the transition metal oxide or hydroxide nanoparticles are prepared from the precursors. The solvent is a hydrophilic solvent which includes one or more selected from a group including water, ethylene glycol, diethylene glycol, triethylene glycol, dimethyl sulfoxide, dimethyl formaldehyde, ethanol, propanol, butanol, phentanol, hexanol, N-methyl-2-pyrrolidone, and acetone.
Abstract:
PURPOSE: A titanate nanostructure and a manufacturing method thereof are provided to control the length and the diameter of the nanostructure by controlling an alkaline solution. CONSTITUTION: A titanate nanostructure is marked with AaBbTixOy. A and B are alkali metals, and a, b, x, and y are fixed numbers. A manufacturing method of the titanate nanostructure comprises the following steps: mixing an alkaline solution with titanium dioxide powder to form a titanium dioxide solution; hydrothermally synthesizing the titanium dioxide solution for 120~180 deg C, to obtain the titanate nanostructure.
Abstract:
A frame input method of an electronic paper display device implementing an efficient display at low electricity is provided to use the electricity efficiently by differently applying power in different color in previous frame. A controller authorizes voltage through a driver in a pair of transparent electrodes(S10). The controller maintains the frame(S20). The controller determines the new frame was inputted(S30). When the new frame is inputted, the controller compares the pixel of the new frame and previous frame. The pixel of the changed domain is extracted(S40). The controller authorizes voltage through the driving part to the transparent electrode corresponding to the extracted pixel region. The pixel of the changed frame is recorded(S50).
Abstract:
본 발명은 가상 데이터 입력 장치 및 그 방법에 관한 것으로서, 특히 평면상 동작을 감지하여 가상의 키보드, 마우스, 전자펜 및 터치패드 기능을 수행하는 가상 데이터 입력 장치 및 그 방법에 관한 것이다. 본 발명은 소정 주파수 대역의 초음파 신호를 송수신하고 동작점 검출신호를 감지하는 감지센서부; 반사체에 대한 동작점의 위치정보를 산출하는 위치산출부; 가상의 키보드, 마우스, 전자펜 및 터치패드를 구분하고, 위치산출부의 위치정보에 상응하는 데이터 입력이 가능하도록 판단정보를 생성하는 입력판단부; 동작점 검출신호, 동작점 위치정보 및 판단정보에 따른 입력데이터를 출력하는 출력부; 감지센서부, 위치산출부, 입력판단부 및 출력부를 제어하는 제어부;를 포함한다. 상기와 같은 본 발명에 따르면, 초음파를 이용하여 평면상의 동작을 감지하고 가상의 키보드 이외에, 가상의 마우스와 전자펜 및 터치패드를 구현하는 효과가 있다. 데이터 입력 장치, 초음파, 가상 키보드, 가상 마우스
Abstract:
A new hydrogen storage material that absorbs and releases a large amount of hydrogen at a room temperature condition by doping light metal cations on covalent organic frameworks is provided, a method of storing hydrogen by using the new hydrogen storage material is provided. A covalent organic framework derivative for hydrogen storage is characterized in that: the covalent organic framework derivative has a crystal structure consisting of a covalent bond of an organic molecule with a metal cation-doped triangular structure and an organic molecule with a rectangular tetrahedral structure; a ring in the center of the triangular structure is a B3O3 ring in which three boron(B) atoms and three oxygen(O) atoms are bonded in the form of a regular hexagonal ring, or a C2O2B ring in which two carbon(C) atoms and one boron(B) atom are bonded in the form of a pentagonal ring; the B3O3 ring or the C2O2B ring is formed in such a way that two of three covalent bonds coming from the boron(B) is covalently bonded to oxygen to form the center of the triangular structure, remaining one of the covalent bonds is bonded to an organic molecule consisting of a phenyl group to form a triangular structure with three apexes, each of the apexes of the triangular structure having at least one phenyl group; and a central atom of the rectangular tetrahedral structure is carbon(C) or silicon(Si), and four bonds of the central atom of the rectangular tetrahedral structure are covalently bonded to the organic molecule consisting of phenyl groups that form the apexes of the triangular structure.
Abstract:
A nano-sized metal crater catalyst having a crater-shaped hole structure formed in the center thereof is provided to obtain characteristics and structure of the nano material, a method for preparing the nano-sized metal crater catalyst is provided to simplify the process and treat a large quantity of metal nanoparticles at a low cost, and a nano material controlled to a desired structure by preparing the nano material using the metal crater catalyst is provided. A nano-sized metal crater catalyst is characterized in that vacancy and dislocation are formed in one or two metal nanoparticle(s) selected from the group consisting of iron(Fe) and cobalt(Co), and a crater-shaped hole with a diameter of 1 to 20 nm is formed in the center of the metal nanoparticle(s) having a height of 3 to 16 nm. A method for preparing a nano-sized metal crater catalyst comprises the steps of: (a) performing plasma pre-treatment of a film of metal nanoparticles deposited onto a substrate at a plasma power of 500 to 800 W and a temperature of 600 to 1000 deg.C in a nitrogen gas atmosphere with a nitrogen gas flow rate of 80 to 120 sccm to form vacancy and dislocation in the metal nanoparticles; and (b) performing chemical etching of the plasma pre-treated metal nanoparticle film for 2 to 4 hours by using a mixed solution comprising ethanol as a solvent and 10 to 30 %(v/v) of nitric acid containing 1 to 10 wt.% of iodine(I) relative to the ethanol to form a hole in the center of the metal nanoparticles. The metal is at least one selected from metal elements of Groups 3 to 14. The metal is one or two selected from the group consisting of iron(Fe) and cobalt(Co).
Abstract:
본 발명은 나노크기 이하의 기공을 가지는카본나이트라이드(Carbonnitride, C 1-x N x ) 나노튜브, 이의 제조방법 및 C 1 - x N x 나노튜브의 기공 크기와 양을 조절하는 방법에 관한 것이다. 본 발명은 1nm 이하의 크기를 지니는 기공을 나노튜브 구조전체에 가지는 C 1-X N X 나노튜브 및 이의 제조방법 제공을 다른 목적으로 한다. 본 발명은 1nm 이하의 크기를 지니는 기공을 나노튜브 구조전체에 가지는 C 1-X N X 나노튜브 제조시 1nm 이하의 크기를 지니는 기공의 크기와 양을 조절하는 방법을 또 다른 목적으로 한다. 본 발명은 금속촉매 입자 존재하에서 탄화수소가스와 질소가스를 플라즈마 화학기상증착법(plasma CVD)으로 반응시켜 나노크기 이하의 기공을 가지는 C 1 - x N x 나노튜브를 제조할 수 있다. 상기의 C 1-x N x 나노튜브에서 x는 0.001∼0.2이다.