Abstract:
A method for manufacturing a transition metal-carbon nanotube hybrid material is provided to produce the hybrid material simply by the medium of nitrogen having high reactivity present within carbon nanotubes even without using a separate surface treatment or an inhibitor. A method for manufacturing a transition metal-carbon nanotube hybrid material includes a step of reducing a transition metal by a reduction reaction within a solution comprising nitrogen-containing carbon nanotubes and a transition metal salt. A nitrogen content in the carbon nanotubes is 0.01-20at%. A solvent forming the solution is polyol. The transition metal salt is an acetate or chloride salt. The nitrogen-containing carbon nanotubes are prepared by reacting hydrocarbon gas with nitrogen gas in the presence of a metal catalyst by plasma chemical vapor deposition.
Abstract:
본 발명은 카본나노튜브의 수소저장용량을 향상시키기 위하여 카본나노튜브의 표면에 나노크기의 니켈(Ni)을 도핑하는 방법에 관한 것이다. 보다 상세히 설명하자면 증착을 통하여 제조한 시편 카본나노튜브의 금속촉매를 제거하기 위하여 황산용액에서 초음파처리한 후 여과하는 전처리 단계와, 카본나노튜브 시편을 액상용액에 함침한 후 건조된 시편을 환원처리하여 나노크기의 니켈을 카본나노튜브 표면에 도핑하는 단계로 구성된다. 본 발명의 수소저장용 나노크기의 Ni이 표면에 도핑된 카본나노튜브는 상온에서 수소의 흡·방출 용량이 기존의 카본나노튜브에 비해 매우 향상되어 상온근처에서 약 2.8wt%의 수소저장이 가능하다. 이는 실제 연료전지용 수소저장 재료로서 상용화가 기대된다.
Abstract:
Carbon nitride C1-xNx nano-tube having pores of less than 1nm is provided to have size and quantity controlled pores over entire portion of structure of the nano-tube by reacting hydrogen carbide gas and nitrogen gas in the presence of metal catalyst through plasma chemical vapor deposition. The carbon nitride nano-tube is represented by C1-xNx wherein x ranges from 0.001 to 0.2 and has pores with diameter of 5 to 10 angstroms. The nano-tube is prepared by reacting 10-90% of hydrogen carbide gas with 10-90% of nitrogen gas in the presence of metal catalyst through plasma chemical vapor deposition. The metal catalyst is any one selected from a group consisting of cobalt, iron, nickel and metal compounds containing any one thereof. The hydrogen carbide gas has 1 to 10 of carbon atoms.
Abstract:
The present invention relates to a semiconductor photocatalyst coated uniformly with a graphitic carbon film on the surface thereof and a fabricating method thereof. The present invention forms a graphitic carbon film having a thickness of 1 nm or less uniformly on the surface of a semiconductor by performing hydrothermal synthesis and pyrolysis on glucose, so as to keep the original structure and crystallinity of the semiconductor photocatalyst which is a support for the carbon film. The carbon film-semiconductor composite photocatalyst fabricated according to the present invention inhibits electron-hole recombination effectively because photoelectrons generated from the semiconductor photocatalyst are transmitted well to protons in an external system; and has high activity as a photocatalyst for generating hydrogen by electrolyzing water.
Abstract:
PURPOSE: TiO2-xNx nanotube in which a nitrogen atom is selectively doped and a method of manufacturing the same are provided to improve conductivity by controlling an electronic structure and reducing a band gap and to obtain more improved electrochemical properties by expanding a light absorbing area to visible light area from ultraviolet ray. CONSTITUTION: A method for manufacturing TiO2-xNx nanotube comprises the following steps: dopping nitrogen on the TiO2 nanotube through plasma; performing plasma treatment at 50~400°C and 400~800W of plasma power; and dopping nitrogen plasma on the TiO2 nanotube to improve optical and electrochemical properties. The nitrogen substitutes oxygen of TiO2 structure. The nitrogen is included in the inner side of a TiO2 lattice.
Abstract:
PURPOSE: A titanate nanostructure and a manufacturing method thereof are provided to control the length and the diameter of the nanostructure by controlling an alkaline solution. CONSTITUTION: A titanate nanostructure is marked with AaBbTixOy. A and B are alkali metals, and a, b, x, and y are fixed numbers. A manufacturing method of the titanate nanostructure comprises the following steps: mixing an alkaline solution with titanium dioxide powder to form a titanium dioxide solution; hydrothermally synthesizing the titanium dioxide solution for 120~180 deg C, to obtain the titanate nanostructure.
Abstract:
본 발명은 리튬 이차 전지용 음극 활물질, 이의 제조 방법 및 이를 포함하는 리튬 이차 전지에 관한 것으로서, 더욱 상세하게는 금속을 음극 활물질로 사용하는 고용량 리튬 이차 전지의 수명 특성을 개선할 수 있는 리튬 이차 전지용 음극 활물질, 이의 제조 방법 및 이를 포함하는 리튬 이차 전지에 관한 것이다. 음극 활물질, 음극, 리튬 이차 전지, Si-C bonding
Abstract:
An anode active material for a lithium secondary battery, its manufacturing method, and a lithium secondary battery containing the anode active material are provided to prevent the shortage due to the volume expansion of a metal-based active material, thereby improving lifetime characteristics. An anode active material for a lithium secondary battery comprises an alloy which comprises an active metal and an inactive metal; and a carbon-based material which is combined with the active metal of the alloy by the active metal-carbon bond. Preferably the active metal is at least one selected from the group consisting of Si, Sn, Al, Zn, Pb, Bi, Ag, Cd and Sb.
Abstract:
A nano-sized metal crater catalyst having a crater-shaped hole structure formed in the center thereof is provided to obtain characteristics and structure of the nano material, a method for preparing the nano-sized metal crater catalyst is provided to simplify the process and treat a large quantity of metal nanoparticles at a low cost, and a nano material controlled to a desired structure by preparing the nano material using the metal crater catalyst is provided. A nano-sized metal crater catalyst is characterized in that vacancy and dislocation are formed in one or two metal nanoparticle(s) selected from the group consisting of iron(Fe) and cobalt(Co), and a crater-shaped hole with a diameter of 1 to 20 nm is formed in the center of the metal nanoparticle(s) having a height of 3 to 16 nm. A method for preparing a nano-sized metal crater catalyst comprises the steps of: (a) performing plasma pre-treatment of a film of metal nanoparticles deposited onto a substrate at a plasma power of 500 to 800 W and a temperature of 600 to 1000 deg.C in a nitrogen gas atmosphere with a nitrogen gas flow rate of 80 to 120 sccm to form vacancy and dislocation in the metal nanoparticles; and (b) performing chemical etching of the plasma pre-treated metal nanoparticle film for 2 to 4 hours by using a mixed solution comprising ethanol as a solvent and 10 to 30 %(v/v) of nitric acid containing 1 to 10 wt.% of iodine(I) relative to the ethanol to form a hole in the center of the metal nanoparticles. The metal is at least one selected from metal elements of Groups 3 to 14. The metal is one or two selected from the group consisting of iron(Fe) and cobalt(Co).
Abstract:
본 발명은 나노크기 이하의 기공을 가지는카본나이트라이드(Carbonnitride, C 1-x N x ) 나노튜브, 이의 제조방법 및 C 1 - x N x 나노튜브의 기공 크기와 양을 조절하는 방법에 관한 것이다. 본 발명은 1nm 이하의 크기를 지니는 기공을 나노튜브 구조전체에 가지는 C 1-X N X 나노튜브 및 이의 제조방법 제공을 다른 목적으로 한다. 본 발명은 1nm 이하의 크기를 지니는 기공을 나노튜브 구조전체에 가지는 C 1-X N X 나노튜브 제조시 1nm 이하의 크기를 지니는 기공의 크기와 양을 조절하는 방법을 또 다른 목적으로 한다. 본 발명은 금속촉매 입자 존재하에서 탄화수소가스와 질소가스를 플라즈마 화학기상증착법(plasma CVD)으로 반응시켜 나노크기 이하의 기공을 가지는 C 1 - x N x 나노튜브를 제조할 수 있다. 상기의 C 1-x N x 나노튜브에서 x는 0.001∼0.2이다.