公开(公告)号：KR101213742B1

公开(公告)日：2012-12-18

申请号：KR1020120035466

申请日：2012-04-05

Applicant: 한국에너지기술연구원

Inventor： 이진석 ,  장보윤 ,  김준수 ,  안영수 ,  위성민 ,  이예능

IPC: H01L31/18 ,  H01L31/04 ,  C01B33/021

CPC classification number: Y02E10/50 ,  H01L31/18 ,  C01B33/021 ,  H01L31/04

Abstract: PURPOSE: A silicon substrate manufacturing device is provided to prevent the inflow of inert gas by installing a valve in a source supplying part for supplying silicon raw material. CONSTITUTION: A main chamber(100) provides a sealed room. A crucible part(200) comprises a materials feed part and a gas inlet. The gas inlet comprises a gas inlet port which is separated from the materials feed part and penetrates an upper side. A source supplying part(500) comprises a first value for controlling opening and closing of a source supplying pipe. A gas supply part(600) supplies inert gas within the crucible part.

Abstract translation: 目的：提供硅衬底制造装置，以通过在用于供应硅原料的源供应部分中安装阀来防止惰性气体的流入。 构成：主室（100）提供密封室。 坩埚部分（200）包括材料进料部分和气体入口。 气体入口包括与材料供给部分分离并穿透上侧的气体入口。 源供应部分（500）包括用于控制源供应管的打开和关闭的第一值。 气体供给部（600）在坩埚部内供给惰性气体。

公开(公告)号：KR101201494B1

公开(公告)日：2012-11-14

申请号：KR1020120035454

申请日：2012-04-05

Applicant: 한국에너지기술연구원

Inventor： 이진석 ,  장보윤 ,  김준수 ,  안영수 ,  위성민 ,  이예능

IPC: H01L31/18 ,  H01L31/04 ,  C01B33/021

CPC classification number: Y02E10/50 ,  H01L31/18 ,  C01B33/021 ,  H01L31/04

Abstract: PURPOSE: An apparatus for manufacturing a silicon substrate is provided to prevent a pore in silicon melt by including an incline part in a crucible. CONSTITUTION: A crucible part(200) includes a top part(210), a side part(250), and an incline part(241). A casting part(300) includes a first casting part(311) and a second casting part(321). The first casting part is vertically extended in the side part facing the incline part. The second casting part is combined with the incline part. A casting space is formed between the first casting part and the second casting part.

Abstract translation: 目的：提供一种用于制造硅衬底的装置，通过在坩埚中包括倾斜部分来防止硅熔体中的孔。 构成：坩埚部件（200）包括顶部部分（210），侧部部分（250）和倾斜部分（241）。 铸造部件（300）包括第一铸造部件（311）和第二铸造部件（321）。 第一铸造件在面向倾斜部分的侧面部分中垂直延伸。 第二个铸件与倾斜部分组合。 在第一铸造部件和第二铸造部件之间形成铸造空间。

公开(公告)号：KR101483693B1

公开(公告)日：2015-01-19

申请号：KR1020120035456

申请日：2012-04-05

Applicant: 한국에너지기술연구원

Inventor： 이진석 ,  장보윤 ,  김준수 ,  안영수 ,  위성민 ,  이예능

IPC: C01B33/02 ,  C30B29/06 ,  B22D25/04 ,  H01L31/042

CPC classification number: C30B15/06 ,  C30B28/10 ,  C30B29/06 ,  C30B35/002 ,  Y10T117/1048

Abstract: 실리콘 기판 제조 장치가 개시된다.
본 발명의 일 측면에 따른 실리콘 기판 제조 장치는 도가니부, 상기 도가니부의 토출부로부터 연장되며, 실리콘 기판이 형성되는 주조 공간을 갖는 주조부 및 상기 주조부의 일측에서 상기 주조 공간으로 삽입되는 더미바를 포함하고, 상기 더미바의 재질은 단결정 물질일 수 있다.

公开(公告)号：KR1020140048478A

公开(公告)日：2014-04-24

申请号：KR1020120114335

申请日：2012-10-15

Applicant: 한국에너지기술연구원

Inventor： 이진석 ,  안영수 ,  장보윤 ,  김준수 ,  이예능 ,  위성민

IPC: H01L31/18 ,  H01L31/042

CPC classification number: Y02E10/50 ,  Y02P70/521 ,  H01L31/042 ,  H01L31/18

Abstract: An embodiment provides an apparatus for manufacturing a silicon substrate, which includes a silicon injection part which supplies silicon as a raw material; a silicon melting part which forms molten silicon by melting the supplied silicon; a molten silicon storage part which receives and stores the molten silicon and has a discharge hole for discharging the molten silicon in constant thickness; a surface heating part which is formed in a position adjacent to the discharge hole of the molten silicon storage part and heats the surface of the molten silicon discharged from the discharge hole at a temperature of a silicon melting point or less; and a transfer substrate which is arranged at the lower part of the molten silicon storage part and transfers the molten silicon material.

Abstract translation: 实施例提供了一种用于制造硅衬底的装置，其包括供应硅作为原料的硅注入部分; 通过熔化供给的硅而形成熔融硅的硅熔融部; 熔融硅储存部，其接收并存储熔融硅，并具有用于排出恒定厚度的熔融硅的排出孔; 表面加热部，其形成在与熔融硅储存部的排出孔相邻的位置，并且在硅熔点以下的温度下加热从排出孔排出的熔融硅的表面; 以及配置在熔融硅储存部的下部并转移熔融硅材料的转印基板。

公开(公告)号：KR1020130113121A

公开(公告)日：2013-10-15

申请号：KR1020120035456

申请日：2012-04-05

Applicant: 한국에너지기술연구원

Inventor： 이진석 ,  장보윤 ,  김준수 ,  안영수 ,  위성민 ,  이예능

IPC: C01B33/02 ,  C30B29/06 ,  B22D25/04 ,  H01L31/042

CPC classification number: C30B15/06 ,  C30B28/10 ,  C30B29/06 ,  C30B35/002 ,  Y10T117/1048

Abstract: PURPOSE: A silicon substrate manufacturing device is provided to enhance productivity and to enlarge the size of silicon substrate grain. CONSTITUTION: A silicon substrate manufacturing device comprises a crucible part (200), a cast part (300), and a dummy bar (400). The cast part is extended from a discharge part of the crucible part and has a casting space in which the silicon substrate is formed. The dummy bar is inserted into the cast space from one side of the casting part. The material of the dummy bar is a single crystal material.

Abstract translation: 目的：提供硅衬底制造装置，以提高生产率并扩大硅衬底颗粒的尺寸。 构成：硅衬底制造装置包括坩埚部分（200），铸件（300）和虚拟棒（400）。 铸造部分从坩埚部分的排放部分延伸并具有其中形成硅衬底的铸造空间。 模具从铸件的一侧插入到铸造空间中。 虚拟棒的材料是单晶材料。

公开(公告)号：KR101193109B1

公开(公告)日：2012-10-19

申请号：KR1020120035455

申请日：2012-04-05

Applicant: 한국에너지기술연구원

Inventor： 이진석 ,  장보윤 ,  김준수 ,  안영수 ,  위성민 ,  이예능

IPC: H01L31/18 ,  H01L31/04 ,  C01B33/021

CPC classification number: Y02E10/50 ,  H01L31/18 ,  C01B33/021 ,  H01L31/04

Abstract: PURPOSE: An apparatus for manufacturing a silicon substrate is provided to prevent a dummy bar coupling unit from contacting with air by providing a sealed space to the outside of the dummy bar coupling unit. CONSTITUTION: A casting part(300) is extended from a discharge part of a crucible part. A dummy bar(400) is inserted from the outside of a main chamber to a casting space. A dummy bar coupling unit(700) is coupled with the dummy bar. A shielding part(900) is arranged on one side of the main chamber and surrounds the outside of the dummy bar coupling part.

Abstract translation: 目的：提供一种用于制造硅衬底的装置，以通过向虚拟棒联接单元的外部提供密封空间来防止虚拟棒联接单元与空气接触。 构成：铸造部件（300）从坩埚部件的排放部分延伸。 将虚拟棒（400）从主室的外部插入铸造空间。 虚拟杆联接单元（700）与虚拟杆联接。 遮蔽部（900）配置在主室的一侧，并且围绕着虚拟棒连接部的外侧。