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公开(公告)号：KR101193109B1
公开(公告)日：2012-10-19
申请号：KR1020120035455
申请日：2012-04-05
Applicant: 한국에너지기술연구원
IPC: H01L31/18 , H01L31/04 , C01B33/021
CPC classification number: Y02E10/50 , H01L31/18 , C01B33/021 , H01L31/04
Abstract: PURPOSE: An apparatus for manufacturing a silicon substrate is provided to prevent a dummy bar coupling unit from contacting with air by providing a sealed space to the outside of the dummy bar coupling unit. CONSTITUTION: A casting part(300) is extended from a discharge part of a crucible part. A dummy bar(400) is inserted from the outside of a main chamber to a casting space. A dummy bar coupling unit(700) is coupled with the dummy bar. A shielding part(900) is arranged on one side of the main chamber and surrounds the outside of the dummy bar coupling part.
Abstract translation: 目的：提供一种用于制造硅衬底的装置，以通过向虚拟棒联接单元的外部提供密封空间来防止虚拟棒联接单元与空气接触。 构成：铸造部件（300）从坩埚部件的排放部分延伸。 将虚拟棒（400）从主室的外部插入铸造空间。 虚拟杆联接单元（700）与虚拟杆联接。 遮蔽部（900）配置在主室的一侧，并且围绕着虚拟棒连接部的外侧。
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Patent Agency Ranking
公开(公告)号：KR101401351B1
公开(公告)日：2014-06-03
申请号：KR1020120114331
申请日：2012-10-15
Applicant: 한국에너지기술연구원
IPC: B22D11/00 , C30B28/10 , C01B33/02 , H01L31/042
CPC classification number: Y02E10/50 , Y02P20/124
Abstract: 실시예는 실리콘 원료가 공급되는 실리콘 원료 투입부; 상기 공급된 실리콘을 용융하여 실리콘 용탕을 형성하는 실리콘 용융부; 상기 실리콘 용탕을 공급받아 저장하며, 상기 실리콘 용탕을 일정한 두께의 용융물로 토출하는 토출구를 가지는 실리콘 용탕 저장부; 상기 실리콘 용탕 저장부 하부에 배치되어 상기 실리콘 용융물을 이송하는 이송기판; 상기 토출구와 인접한 지점에 구비되어, 상기 토출구를 통해 토출된 실리콘 용융물의 표면을 가열하는 표면 가열부; 및 상기 표면 가열부와 인접하여 위치하고, 상기 실리콘 용융물의 표면에 고압가스를 분사하는 기체 분사부를 포함하는 실리콘 기판 제조장치를 제공한다.
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公开(公告)号：KR1020140048477A
公开(公告)日：2014-04-24
申请号：KR1020120114331
申请日：2012-10-15
Applicant: 한국에너지기술연구원
IPC: B22D11/00 , C30B28/10 , C01B33/02 , H01L31/042
CPC classification number: Y02E10/50 , Y02P20/124 , B22D11/01 , B22D11/1284 , B22D25/04 , H01L31/18
Abstract: An embodiment of the present invention provides an apparatus for manufacturing silicone substrates, which comprises: a silicone material injection unit to which a silicone material is supplied; a silicone melting unit to form molten silicone by melting the supplied silicone; a molten silicone storage unit which stores the supplied molten silicone, and has an outlet which discharges the molten silicone as a molten object at a constant thickness provided thereon; a transfer substrate which is arranged on the lower part of the molten silicone storage unit and which transfers the molten object; a surface heating unit which is provided on a position neighboring the outlet which heats a surface of the molten silicone discharged through the outlet; and a gas spraying unit for spraying high pressure gas onto the surface of the molten silicone.
Abstract translation: 本发明的一个实施例提供了一种用于制造硅树脂基底的装置，其包括：提供有机硅材料的硅酮材料注入单元; 聚硅氧烷熔融单元，通过熔化供应的硅氧烷形成熔融硅氧烷; 熔融硅酮储存单元，其存储所提供的熔融硅氧烷，并且具有以设置在其上的恒定厚度排出作为熔融物体的熔融硅酮的出口; 转移基材，其设置在熔融硅酮储存单元的下部并传送熔融物体; 表面加热单元，设置在与出口相邻的位置上，加热通过出口排出的熔融硅氧烷的表面; 以及用于将高压气体喷射到熔融硅酮表面上的气体喷射单元。
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公开(公告)号：KR101355625B1
公开(公告)日：2014-01-28
申请号：KR1020120114334
申请日：2012-10-15
Applicant: 한국에너지기술연구원
IPC: H01L31/18 , H01L31/042
CPC classification number: Y02E10/50 , H01L31/042 , H01L31/18
Abstract: The embodiment is to provide an apparatus for manufacturing a silicon substrate. The apparatus for manufacturing a silicon substrate includes a silicon input put supplying silicon; a silicon melting part melting the supplied silicon and forming molten silicon; a molten silicon storage part having an injection hole, storing the molten silicon, and injecting the molten silicon with constant thickness; a transfer substrate moving the molten silicon and arranged in the lower part of the molten silicon storage part; and a surface processing unit performing a surface process by pressuring the molten silicon injected from the injection hole.
Abstract translation: 该实施例是提供一种用于制造硅衬底的装置。 硅衬底的制造装置包括硅输入放电供应硅; 熔化供应的硅并形成熔融硅的硅熔化部分; 熔融硅储存部分，具有注入孔，储存熔融硅，并注入具有恒定厚度的熔融硅; 转移基板移动熔融硅并且布置在熔融硅储存部分的下部; 以及表面处理单元，通过对从所述注入孔注入的熔融硅进行加压来进行表面处理。
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公开(公告)号：KR101213742B1
公开(公告)日：2012-12-18
申请号：KR1020120035466
申请日：2012-04-05
Applicant: 한국에너지기술연구원
IPC: H01L31/18 , H01L31/04 , C01B33/021
CPC classification number: Y02E10/50 , H01L31/18 , C01B33/021 , H01L31/04
Abstract: PURPOSE: A silicon substrate manufacturing device is provided to prevent the inflow of inert gas by installing a valve in a source supplying part for supplying silicon raw material. CONSTITUTION: A main chamber(100) provides a sealed room. A crucible part(200) comprises a materials feed part and a gas inlet. The gas inlet comprises a gas inlet port which is separated from the materials feed part and penetrates an upper side. A source supplying part(500) comprises a first value for controlling opening and closing of a source supplying pipe. A gas supply part(600) supplies inert gas within the crucible part.
Abstract translation: 目的：提供硅衬底制造装置，以通过在用于供应硅原料的源供应部分中安装阀来防止惰性气体的流入。 构成：主室（100）提供密封室。 坩埚部分（200）包括材料进料部分和气体入口。 气体入口包括与材料供给部分分离并穿透上侧的气体入口。 源供应部分（500）包括用于控制源供应管的打开和关闭的第一值。 气体供给部（600）在坩埚部内供给惰性气体。
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公开(公告)号：KR101201494B1
公开(公告)日：2012-11-14
申请号：KR1020120035454
申请日：2012-04-05
Applicant: 한국에너지기술연구원
IPC: H01L31/18 , H01L31/04 , C01B33/021
CPC classification number: Y02E10/50 , H01L31/18 , C01B33/021 , H01L31/04
Abstract: PURPOSE: An apparatus for manufacturing a silicon substrate is provided to prevent a pore in silicon melt by including an incline part in a crucible. CONSTITUTION: A crucible part(200) includes a top part(210), a side part(250), and an incline part(241). A casting part(300) includes a first casting part(311) and a second casting part(321). The first casting part is vertically extended in the side part facing the incline part. The second casting part is combined with the incline part. A casting space is formed between the first casting part and the second casting part.
Abstract translation: 目的：提供一种用于制造硅衬底的装置，通过在坩埚中包括倾斜部分来防止硅熔体中的孔。 构成：坩埚部件（200）包括顶部部分（210），侧部部分（250）和倾斜部分（241）。 铸造部件（300）包括第一铸造部件（311）和第二铸造部件（321）。 第一铸造件在面向倾斜部分的侧面部分中垂直延伸。 第二个铸件与倾斜部分组合。 在第一铸造部件和第二铸造部件之间形成铸造空间。
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