公开(公告)号：KR1020140020444A

公开(公告)日：2014-02-19

申请号：KR1020120086800

申请日：2012-08-08

Applicant: 한국전자통신연구원

Inventor： 구진근 ,  원종일 ,  나경일 ,  이진호

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L29/7397 ,  H01L29/66325

Abstract: According to one embodiment of the present invention, a method of fabricating a transistor includes forming a first burying layer on a substrate, forming a second burying layer on the substrate, laminating a first and a second epitaxial layer successively on the first and the second burying layer, exposing the first and the second burying layer by polishing the back surface of the substrate, and forming a metal layer on the back surfaces of the first and the second burying layer that are exposed. As the process of fabricating a transistor is simplified, the breakage of a wafer can be prevented. The first and the second burying layer can be activated by performing a pre-heating process without expensive thermal processing equipment.

Abstract translation: 根据本发明的一个实施例，一种制造晶体管的方法包括在衬底上形成第一掩埋层，在衬底上形成第二掩埋层，在第一和第二掩埋层上依次层叠第一和第二外延层 层，通过抛光基板的背面露出第一和第二掩埋层，并且在暴露的第一和第二掩埋层的背面上形成金属层。 由于简化了制造晶体管的工艺，可以防止晶片的破损。 可以通过执行预热过程来激活第一和第二埋置层，而不需要昂贵的热处理设备。

公开(公告)号：KR1020130139013A

公开(公告)日：2013-12-20

申请号：KR1020120062668

申请日：2012-06-12

Applicant: 한국전자통신연구원

Inventor： 김상기 ,  이진호 ,  나경일 ,  구진근 ,  양일석

IPC: H01L29/866

Abstract: A semiconductor device according to an embodiment of the present invention includes a substrate with a first conductive type and a recessed area; an ion injection layer in contact with the floor surface of the recessed area and having a second conductive type different from the first conductive type; a diffusion prevention pattern placed between the side walls of the ion injection layer and the side wall of the recessed area; and a contact electrode away from the diffusion prevention pattern and placed on the ion injection layer.

Abstract translation: 根据本发明的实施例的半导体器件包括具有第一导电类型和凹陷区域的衬底; 与所述凹陷区域的地板表面接触并具有不同于所述第一导电类型的第二导电类型的离子注入层; 设置在离子注入层的侧壁和凹陷区域的侧壁之间的扩散防止图案; 和远离扩散防止图案的接触电极，并放置在离子注入层上。