Abstract:
본 발명은 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치에 관한 것으로, 더욱 상세하게는 진공챔버 내부에서 원료 실리콘을 가열하여 용융시킨 후, 냉각시켜 다결정 실리콘 잉곳을 제조하는 장치에 있어서, 상기 진공챔버 내부에 수평방향으로 상호 이격되도록 배열되며, 원료 실리콘이 각각 담겨져 다결정 실리콘 잉곳이 제조되는 다수의 도가니, 상기 각 도가니를 가열시켜 담겨진 원료 실리콘을 용융시키도록 상기 각 도가니의 외측에 구비되는 히터수단, 및 상기 히터수단에 의해 용융된 실리콘을 냉각시켜 다결정 잉곳으로 성장시키기 위해 상기 도가니를 냉각시키는 냉각수단을 포함하여 이루어진다. 상기와 같은 본 발명에 의하면, 외부히터와 내부히터로 구성된 히터수단의 각 온도를 제어하여 다수의 도가니를 가열시킬 수 있음에 따라 종래와 유사한 제조시간에 다수의 잉곳을 동시에 생산할 수 있어 제품의 질은 물론, 대량생산이 가능하며, 또한 비상 시 액상 실리콘의 누출 방지를 위한 보호판의 설치에 의해 장비 파손 및 폭발의 위험을 방지함과 더불어, 실리콘 응고열의 일방향성 제어를 통해 고효율 태양전지 제조에 적합한 잉곳의 주상구조 분율을 극대화 할 수 있다.
Abstract:
PURPOSE: A poly-crystal silicon ingot manufacturing device for a solar battery is provided to manufacture a high capacity and high quality silicon ingot by uniformly growing silicon crystal from a lower direction to an upper direction. CONSTITUTION: A susceptor is installed in the outer side of a crucible and covers the crucible. A support stand(400) is installed in the lower side of the crucible and the susceptor and supports the crucible and the susceptor. A main heater part is formed into an insulating material which secludes a heat and is installed in a main heater and outer side of the main heater. A sub heater part(600) comprises a pair of sub heaters, a pair of Insulation boards, a pair of insulating plates, and a pair of rotated electrodes. A cooling part(700) is installed in the lower side of the sub heater part and eliminates the heat of solidification of a silicon material which is dissolved. The cooling part manufactures a silicon ingot by coagulating the silicon material which is dissolved by approaching to the crucible after passing through an opening part.
Abstract:
PURPOSE: An apparatus for manufacturing a high productive poly-crystal silicon ingot is provided to prevent an apparatus from being damaged or exploded by maintaining silicon to be safe by the end of a process with the separation of the silicon, which is flown out, in the lower part of a damaged crucible and. CONSTITUTION: A vacuum chamber(100) includes a crucible in which a poly-crystal silicon ingot is formed. The crucible is arranged to a horizontal direction to be separated. A susceptor(500) is fixed in the vacuum chamber by a support stand. A heating device(300) is included in the outside of each crucible and transfers radiant heat to the crucible. A cooling device(400) is included to cool the crucible.
Abstract:
A device for producing an ingot according the present invention produces a semiconductor or metal oxide ingot by sequentially performing a liquid to solid phase transition on a liquid raw material in a vacuum chamber in order to have a solidification direction. The device includes a unit body that comprises: a crucible that uses the height of the device as a length direction and a direction which is vertical to the length direction as a width direction so that a semiconductor or metal oxide raw material is dipped; a cooling means that is equipped to be separated from the crucible at a particular distance in a length direction; a heating means that includes a first heating means equipped to be separated from the crucible at a particular distance in a width direction so as to surround the edge surface of the crucible and also includes a second heating means equipped to be separated from the crucible at a particular distance in a length direction so as to be opposed to the cooling means in a length direction with the crucible between the second heating means and the cooling means; and an insulating member that is disposed in a length direction between the crucible and the cooling means and is moved by means of a moving unit. A virtual surface is formed to cross the center of an internal spatial part included in the vacuum chamber, and the unit body is equipped in each section that is divided in the internal spatial part by means of the virtual surface.
Abstract:
PURPOSE: An apparatus for manufacturing a silicon ingot having an anti-leakage system of liquid silicon is provided to improve the safety of an ingot manufacturing experiment. CONSTITUTION: An insulation layer(110) is installed between a heater unit(300) and a cooling unit(400). A silicon blocking unit(800) surrounds a susceptor(500). The silicon blocking unit prevents the leak of liquid silicon. A silicon storage chamber(900) is installed to the lower part of the insulation layer. The silicon storage chamber accommodates leaked silicon.
Abstract:
PURPOSE: A fluidized bed reactor is provided to prevent the contamination of poly-crystalline silicon by alternately arranging the interfacing parts of pieces forming each plate inside the plate. CONSTITUTION: A fluidized bed reactor includes a head(100), a first body part(200), a second body part(300), and a bottom part(400). The first body part is arranged under the head and is in connection with the head. A first reacting pipe is arranged in the first body part. The second body part is arranged under the first body part and is in connection with the first body part. A second reacting pipe is arranged in the second body part. The bottom part is arranged under the second body part and is in connection with the second body part. A flow gas supplying nozzle(600), a reaction gas supplying nozzle(650), a heater(700), and an electrode(800) are assembled at the bottom part.