公开(公告)号：KR101401255B1

公开(公告)日：2014-05-30

申请号：KR1020120137716

申请日：2012-11-30

Applicant: 한국화학연구원

Inventor： 문상진 ,  소원욱 ,  박동순 ,  구명회 ,  이운복

IPC: C30B28/06 ,  C30B29/06 ,  H01L31/042 ,  H01L21/02

CPC classification number: Y02E10/50 ,  C30B28/06 ,  C30B21/02 ,  C30B29/06 ,  F27B2014/0837 ,  H01L21/02 ,  H01L31/042

Abstract: A device for producing an ingot according the present invention produces a semiconductor or metal oxide ingot by sequentially performing a liquid to solid phase transition on a liquid raw material in a vacuum chamber in order to have a solidification direction. The device includes a unit body that comprises: a crucible that uses the height of the device as a length direction and a direction which is vertical to the length direction as a width direction so that a semiconductor or metal oxide raw material is dipped; a cooling means that is equipped to be separated from the crucible at a particular distance in a length direction; a heating means that includes a first heating means equipped to be separated from the crucible at a particular distance in a width direction so as to surround the edge surface of the crucible and also includes a second heating means equipped to be separated from the crucible at a particular distance in a length direction so as to be opposed to the cooling means in a length direction with the crucible between the second heating means and the cooling means; and an insulating member that is disposed in a length direction between the crucible and the cooling means and is moved by means of a moving unit. A virtual surface is formed to cross the center of an internal spatial part included in the vacuum chamber, and the unit body is equipped in each section that is divided in the internal spatial part by means of the virtual surface.

Abstract translation: 根据本发明的用于制造锭的装置通过在真空室中的液体原料上依次进行液相至固相转变来制造半导体或金属氧化物锭，以具有凝固方向。 该装置包括：单元主体，其包括：坩埚，其使用所述装置的高度作为长度方向和与所述长度方向垂直的方向作为宽度方向，使得半导体或金属氧化物原料被浸渍; 冷却装置，其被设置成在长度方向上以特定距离与坩埚分离; 加热装置，其包括第一加热装置，其被配备为在坩埚上沿宽度方向以特定距离与坩埚分离以包围坩埚的边缘表面，并且还包括第二加热装置，其被配备为在坩埚中与 在第二加热装置和冷却装置之间的坩埚之间沿长度方向在长度方向上与冷却装置相对的特定距离; 以及在坩埚和冷却装置之间沿长度方向设置并通过移动单元移动的绝缘构件。 虚拟表面形成为穿过包括在真空室中的内部空间部分的中心，并且在通过虚拟表面在内部空间部分中分割的每个部分中装备单位体。

公开(公告)号：KR1020130114353A

公开(公告)日：2013-10-18

申请号：KR1020120036625

申请日：2012-04-09

Applicant: 한국화학연구원

Inventor： 문상진 ,  소원욱 ,  박동순 ,  구명회 ,  이운복

IPC: C30B15/10 ,  C30B11/00 ,  C30B29/06 ,  H01L31/042

CPC classification number: Y02E10/50 ,  C30B15/10 ,  C30B11/002 ,  C30B29/06 ,  H01L31/042

Abstract: PURPOSE: A method for manufacturing a crucible protecting layer is provided to improve the quality of a silicon ingot by using a mixture of water and silicon nitride. CONSTITUTION: An aqueous dispersant is coated on the inner surface of a crucible and is made of water and silicon nitride. The crucible is thermally processed at 900 to 1350 degrees centigrade. A protection layer is formed by a thermal process and is made of the silicon nitride.

Abstract translation: 目的：提供一种用于制造坩埚保护层的方法，以通过使用水和氮化硅的混合物来改善硅锭的质量。 构成：将水性分散剂涂覆在坩埚的内表面上，并由水和氮化硅制成。 坩埚在900至1350摄氏度下热处理。 保护层由热处理形成，由氮化硅制成。

公开(公告)号：KR101431457B1

公开(公告)日：2014-08-22

申请号：KR1020120036625

申请日：2012-04-09

Applicant: 한국화학연구원

Inventor： 문상진 ,  소원욱 ,  박동순 ,  구명회 ,  이운복

IPC: C30B15/10 ,  C30B11/00 ,  C30B29/06 ,  H01L31/042

CPC classification number: Y02E10/50

Abstract: 본 발명은 실리콘 질화물로 잉곳용 도가니 보호막을 제조하는 방법에 관한 것으로, 이는 유기 바인더를 사용하지 않아 불순물 오염 방지가 가능하고, 물과 실리콘 질화물 혼합물을 사용하기 때문에 제조가 간편하며, 실리콘 질화물 입자간 결합을 강화하여 잉곳용 충진 원료와의 접촉에 의해 벗겨지는 문제 해결이 가능한 강도가 높은 장점이 있고, 또한 도가니 하부 보호막의 두께 및 밀도를 변화시켜 단결정 또는 다결정 구조를 제어하였다. 그 결과 이러한 보호막을 포함하는 도가니를 이용하면 유사 단결정 또는 다결정 실리콘 잉곳을 제조할 시 단결정 또는 다결정 구조 제어가 용이하고, 유기 바인더 사용으로부터 야기되는 불순물 오염 최소화가 가능하여 고 품질의 실리콘 잉곳 제조가 가능하다.