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    CRYSTAL RIBBON FABRICATION WITH MULTI-COMPONENT STRINGS
    11.
    发明申请
    CRYSTAL RIBBON FABRICATION WITH MULTI-COMPONENT STRINGS 审中-公开
    具有多组分条纹的晶体RIBBON制造

    公开(公告)号：WO2012094169A2

    公开(公告)日：2012-07-12

    申请号：PCT/US2011/066842

    申请日：2011-12-22

    Applicant: 1366 TECHNOLOGIES INC. ,  SACHS, Emanuel, M. ,  SERDY, James, G.

    Inventor： SACHS, Emanuel, M. ,  SERDY, James, G.

    IPC: B32B5/26

    CPC classification number: C30B15/007 ,  C30B29/06

    Abstract: A string for growing ribbon crystal has a core and an outer cover, the cover composed of at least two different materials, chosen with the material of the core in amount and kind such that the CTE of the covered core matches in net, that of the silicon ribbon. The cover material is also chosen so that silicon readily wets significantly around the string, subtending an angle of at least about 55 degrees, up to a fully wetted string, resulting in a relatively thick strong ribbon adjacent the string, closer in thickness to the diameter of the sting. This prevents a thin, fragile ribbon near the string. For silicon ribbon, a cover may be an interspersed composition that is predominantly of silica, with some SiC. The core may also be composed of silica and SiC, in different proportions, and different geometry. Or, the core may be a single material, such as Carbon. SiC present in the cover in an amount as low as 10% by volume permits wetting around at least about 55 degrees of string circumference and does not excessively nucleate grain growth. Higher amounts of SiC are also beneficial. Using these same, or similar materials, the outer cover can be made fully dense and free of impurities that would harm silicon. The cover can be electrically non-conductive. Rather than silicon carbide, silicon nitride, and other materials can be used. It is also possible to intentionally mismatch the CTE of the string and the ribbon, such that the ribbon is in compression at the ends of the strings, which helps to prevent ribbon fracture.

    Abstract translation: 用于生长的带状晶体的线条具有芯部和外部覆盖物，所述覆盖物由至少两种不同的材料组成，其选择的材料的数量和种类的核心的材料使得被覆盖的芯部的CTE在网中匹配， 硅带。 覆盖材料也被选择成使得硅很容易在弦的周围润湿，对角至少约55度的角度，直到完全润湿的线，导致邻近弦的相对厚的强带，其厚度更接近于直径 的刺痛。 这样可以防止弦附近的薄而脆弱的丝带。 对于硅带，覆盖物可以是散在的组合物，其主要是二氧化硅，具有一些SiC。 核心也可以由不同比例的二氧化硅和SiC组成，并且具有不同的几何形状。 或者，核心可以是单一材料，例如碳。 存在于覆盖物中的低至10体积％的量的SiC允许在至少约55度的串周长处润湿，并且不会使晶粒生长过度成核。 更高量的SiC也是有益的。 使用这些相同或相似的材料，外盖可以制成完全致密且没有会损害硅的杂质。 盖可以是非导电的。 可以使用碳化硅，氮化硅等材料。 还可以有意地使串和色带的CTE不匹配，使得色带在色带的端部处被压缩，这有助于防止色带断裂。

    WEDGE IMPRINT PATTERNING OF IRREGULAR SURFACE
    12.
    发明申请
    WEDGE IMPRINT PATTERNING OF IRREGULAR SURFACE 审中-公开
    不规则表面的楔形图案

    公开(公告)号：WO2009128946A1

    公开(公告)日：2009-10-22

    申请号：PCT/US2009/002423

    申请日：2009-04-17

    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY ,  1366 TECHNOLOGIES INC. ,  POLITO, Benjamin, E. ,  GATES, Holly, G. ,  SACHS, Emanuel, M.

    Inventor： POLITO, Benjamin, E. ,  GATES, Holly, G. ,  SACHS, Emanuel, M.

    IPC: B29C59/02

    CPC classification number: H01L31/182 ,  B29C43/021 ,  B29C43/222 ,  B29C59/02 ,  B29C2043/025 ,  B29C2043/3634 ,  B29C2043/3652 ,  B29C2043/465 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

    Abstract: Patterned substrates for photovoltaic and other uses are made by pressing a flexible stamp upon a thin layer of resist material, which covers a substrate, such as a wafer. The resist changes phase or becomes flowable, flowing away from locations of impression, revealing the substrate, which is subjected to some shaping process, typically etching. Portions exposed by the stamp being are removed, and portions that protected by the resist, remain. A typical substrate is silicon, and a typical resist is a wax. Workpiece textures include extended grooves, discrete, spaced apart pits, and combinations and intermediates thereof. Platen or rotary patterning apparatus may be used. Rough and irregular workpiece substrates may be accommodated by extended stamp elements. Resist may be applied first to the workpiece, the stamp, or substantially simultaneously, in discrete locations, or over the entire surface of either. The resist dewets the substrate completely where desired.

    Abstract translation: 用于光伏和其他用途的图案化基板是通过将柔性印模压在覆盖诸如晶片的基底的抗蚀剂材料薄层上而制成的。 抗蚀剂改变相位或变得可流动，从印模的位置流出，露出经受一些成形过程的基底，通常是蚀刻。 被邮票曝光的部分被去除，并且被抗蚀剂保护的部分保留。 典型的基底是硅，典型的抗蚀剂是蜡。 工件纹理包括延伸凹槽，离散的，间隔开的凹坑，以及它们的组合和中间体。 可以使用压板或旋转图案形成装置。 粗糙和不规则的工件衬底可以由延长的印模元件容纳。 抗蚀剂可以首先施加到工件，印模或基本上同时地在离散的位置，或者在两者的整个表面上。 抗蚀剂在需要时完全将基材脱模。

    POROUS LIFT-OFF LAYER FOR SELECTIVE REMOVAL OF DEPOSITED FILMS
    15.
    发明公开
    POROUS LIFT-OFF LAYER FOR SELECTIVE REMOVAL OF DEPOSITED FILMS 审中-公开
    多孔揭层选择性去除沉积MOVIES

    公开(公告)号：EP2430653A1

    公开(公告)日：2012-03-21

    申请号：EP10772893.3

    申请日：2010-05-07

    Applicant: 1366 Technologies Inc.

    Inventor： SACHS, Emanuel, M. ,  GABOR, Andrew, M.

    IPC: H01L21/306 ,  H01L31/00 ,  H01L31/18

    CPC classification number: H01L31/022425 ,  H01L21/76802 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

    Abstract: A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A film is applied over a patterned porous layer, the layer comprising openings typically larger than the film thickness. The porous material and the film are then removed from areas where film is not intended. The porous layer can be provided as a slurry, dried to open porosities, or fugitive particles within a field, which disassociate upon the application of heat or solvent. The film can be removed by etchant that enters through porosities where the film does not bridge the spaces between solid portions, so that the etchant attacks both film surfaces

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